SI5475DDC-T1-GE3

SI5475DDC-T1-GE3
Mfr. #:
SI5475DDC-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -12V Vds 8V Vgs 1206-8 ChipFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI5475DDC-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI5475DDC-T1-GE3 DatasheetSI5475DDC-T1-GE3 Datasheet (P4-P6)SI5475DDC-T1-GE3 Datasheet (P7-P9)SI5475DDC-T1-GE3 Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI54
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI5475DDC-GE3
Gewichtseinheit:
0.002998 oz
Tags
SI5475DD, SI5475D, SI5475, SI547, SI54, SI5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
P-Channel 12 V 0.032 Ohm Surface Mount Power Mosfet - ChipFET-1206-8
***ical
Trans MOSFET P-CH 12V 6A 8-Pin Chip FET T/R
***ark
P-Channel 12-V (D-S) Mosfet Rohs Compliant: No
***ment14 APAC
MOSFET, P CH, 12V, 6A, 1206-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:5.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:1206; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-6A; Power Dissipation Pd:5.7W; Voltage Vgs Max:8V
Teil # Mfg. Beschreibung Aktie Preis
SI5475DDC-T1-GE3
DISTI # SI5475DDC-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 12V 6A 1206-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI5475DDC-T1-GE3
    DISTI # SI5475DDC-T1-GE3CT-ND
    Vishay SiliconixMOSFET P-CH 12V 6A 1206-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI5475DDC-T1-GE3
      DISTI # SI5475DDC-T1-GE3DKR-ND
      Vishay SiliconixMOSFET P-CH 12V 6A 1206-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI5475DDC-T1-GE3
        DISTI # 20AC3930
        Vishay IntertechnologiesP-CHANNEL 12-V (D-S) MOSFET0
          SI5475DDC-T1-GE3
          DISTI # 781-SI5475DDC-T1-GE3
          Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs 1206-8 ChipFET
          RoHS: Compliant
          0
            Bild Teil # Beschreibung
            SI5475DDC-T1-GE3

            Mfr.#: SI5475DDC-T1-GE3

            OMO.#: OMO-SI5475DDC-T1-GE3

            MOSFET -12V Vds 8V Vgs 1206-8 ChipFET
            SI5475DDC

            Mfr.#: SI5475DDC

            OMO.#: OMO-SI5475DDC-1190

            Neu und Original
            SI5475DDC-T1-E3

            Mfr.#: SI5475DDC-T1-E3

            OMO.#: OMO-SI5475DDC-T1-E3-1190

            Neu und Original
            SI5475DDC-T1-GE3

            Mfr.#: SI5475DDC-T1-GE3

            OMO.#: OMO-SI5475DDC-T1-GE3-VISHAY

            MOSFET P-CH 12V 6A 1206-8
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            4000
            Menge eingeben:
            Der aktuelle Preis von SI5475DDC-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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