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SIS424DN-T1-GE3

SIS424DN-T1-GE3
Mfr. #:
SIS424DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 781-SIS410DN-T1-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIS424DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIS
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SIS424DN-GE3
Tags
SIS42, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 20V 19.6A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET N-CH 20V 35A PPAK 1212-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:19.6A; On Resistance Rds(On):0.0053Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
SIS424DN-T1-GE3
DISTI # SIS424DN-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 20V 35A PPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.4389
SIS424DN-T1-GE3
DISTI # SIS424DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 19.6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS424DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SIS424DN-T1-GE3.
    DISTI # 61AC1927    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:19.6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:39W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1:$0.5100
    • 6000:$0.4950
    • 12000:$0.4750
    • 18000:$0.4610
    • 30000:$0.4490
    SIS424DN-T1-GE3
    DISTI # 781-SIS424DN-T1-GE3    		Vishay IntertechnologiesMOSFET 20V 35A 39W
    RoHS: Compliant    		0
      SIS424DN-T1-GE3Vishay IntertechnologiesMOSFET 20V 35A 39W
      RoHS: Compliant      		Americas -
        Bild Teil # Beschreibung
        SIS424DN-T1-GE3

        Mfr.#: SIS424DN-T1-GE3

        OMO.#: OMO-SIS424DN-T1-GE3

        		 MOSFET RECOMMENDED ALT 781-SIS410DN-T1-GE3
        SIS424DN-T1-GE3

        Mfr.#: SIS424DN-T1-GE3

        OMO.#: OMO-SIS424DN-T1-GE3-VISHAY

        		 RF Bipolar Transistors MOSFET 20V 35A 39W
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5500
        Menge eingeben:
        Der aktuelle Preis von SIS424DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,99 $
        0,99 $
        10
        0,82 $
        8,20 $
        100
        0,63 $
        62,90 $
        500
        0,54 $
        270,50 $
        1000
        0,43 $
        427,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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