PSMN3R3-80ES,127

PSMN3R3-80ES,127
Mfr. #:
PSMN3R3-80ES,127
Hersteller:
Nexperia
Beschreibung:
MOSFET N-Ch 80V 3.3 m std level MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PSMN3R3-80ES,127 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PSMN3R3-80ES,127 DatasheetPSMN3R3-80ES,127 Datasheet (P4-P6)PSMN3R3-80ES,127 Datasheet (P7-P9)PSMN3R3-80ES,127 Datasheet (P10-P12)PSMN3R3-80ES,127 Datasheet (P13-P15)
ECAD Model:
Mehr Informationen:
PSMN3R3-80ES,127 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Nexperia
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
I2PAK-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
3.3 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
135 nC
Pd - Verlustleistung:
338 W
Aufbau:
Single
Verpackung:
Rohr
Transistortyp:
1 N-Channel
Marke:
Nexperia
Abfallzeit:
44 ns
Produktart:
MOSFET
Anstiegszeit:
43 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.084199 oz
Tags
PSMN3R3-8, PSMN3R3, PSMN3, PSMN, PSM
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PSMN3R3-80ES - N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
***et
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail
***enic
SOT-226 MOSFETs ROHS
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
Teil # Mfg. Beschreibung Aktie Preis
PSMN3R3-80ES,127
DISTI # 1727-6502-ND
NexperiaMOSFET N-CH 80V 120A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$1.8412
PSMN3R3-80ES,127
DISTI # PSMN3R3-80ES,127
NexperiaTrans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: PSMN3R3-80ES,127)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 6000:$1.3900
  • 10000:$1.3900
  • 1000:$1.4900
  • 2000:$1.4900
  • 4000:$1.4900
PSMN3R3-80ES,127
DISTI # PSMN3R3-80ES127
NexperiaTrans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail - Bulk (Alt: PSMN3R3-80ES127)
Min Qty: 209
Container: Bulk
Americas - 0
  • 1045:$1.4900
  • 2090:$1.4900
  • 418:$1.5900
  • 627:$1.5900
  • 209:$1.6900
PSMN3R3-80ES,127
DISTI # 771-PSMN3R3-80ES127
NexperiaMOSFET N-Ch 80V 3.3 m std level MOSFET
RoHS: Compliant
450
  • 1:$3.1700
  • 10:$2.6900
  • 100:$2.3400
  • 250:$2.2200
  • 500:$1.9900
  • 1000:$1.6800
  • 2500:$1.6000
  • 5000:$1.5400
PSMN3R3-80ES127NXP SemiconductorsNow Nexperia PSMN3R3-80ES - Power Field-Effect Transistor, 120A I(D), 80V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Not Compliant
1415
  • 1000:$1.5800
  • 500:$1.6600
  • 100:$1.7300
  • 25:$1.8100
  • 1:$1.9400
Bild Teil # Beschreibung
PSMN3R3-80PS,127

Mfr.#: PSMN3R3-80PS,127

OMO.#: OMO-PSMN3R3-80PS-127

MOSFET N-Ch 80V 3.3 m std level MOSFET
PSMN3R3-60PLQ

Mfr.#: PSMN3R3-60PLQ

OMO.#: OMO-PSMN3R3-60PLQ

MOSFET N-Channel MOSFET
PSMN3R3-80ES,127

Mfr.#: PSMN3R3-80ES,127

OMO.#: OMO-PSMN3R3-80ES-127

MOSFET N-Ch 80V 3.3 m std level MOSFET
PSMN3R3-80PS,127

Mfr.#: PSMN3R3-80PS,127

OMO.#: OMO-PSMN3R3-80PS-127-NEXPERIA

MOSFET N-CH 80V 120A TO220AB
PSMN3R3-80BS118

Mfr.#: PSMN3R3-80BS118

OMO.#: OMO-PSMN3R3-80BS118-1190

Neu und Original
PSMN3R3-80ES127

Mfr.#: PSMN3R3-80ES127

OMO.#: OMO-PSMN3R3-80ES127-1190

Now Nexperia PSMN3R3-80ES - Power Field-Effect Transistor, 120A I(D), 80V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
PSMN3R3-80PS

Mfr.#: PSMN3R3-80PS

OMO.#: OMO-PSMN3R3-80PS-1190

Neu und Original
PSMN3R3-60PLQ

Mfr.#: PSMN3R3-60PLQ

OMO.#: OMO-PSMN3R3-60PLQ-NEXPERIA

IGBT Transistors MOSFET N-Channel MOSFET
PSMN3R3-40YS,115-CUT TAPE

Mfr.#: PSMN3R3-40YS,115-CUT TAPE

OMO.#: OMO-PSMN3R3-40YS-115-CUT-TAPE-1190

Neu und Original
PSMN3R3-80BS,118

Mfr.#: PSMN3R3-80BS,118

OMO.#: OMO-PSMN3R3-80BS-118-NEXPERIA

MOSFET N-CH 80V 120A D2PAK
Verfügbarkeit
Aktie:
450
Auf Bestellung:
2433
Menge eingeben:
Der aktuelle Preis von PSMN3R3-80ES,127 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,17 $
3,17 $
10
2,69 $
26,90 $
100
2,34 $
234,00 $
250
2,22 $
555,00 $
500
1,99 $
995,00 $
1000
1,68 $
1 680,00 $
2500
1,60 $
4 000,00 $
5000
1,54 $
7 700,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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