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TK10A80E,S4X

TK10A80E,S4X
Mfr. #:
TK10A80E,S4X
Hersteller:
Toshiba
Beschreibung:
MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
TK10A80E,S4X Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK10A80E,S4X DatasheetTK10A80E,S4X Datasheet (P4-P6)TK10A80E,S4X Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
TK10A80E,S4X Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
10 A
Rds On - Drain-Source-Widerstand:
700 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
46 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
50 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
DTMOSIV
Höhe:
15 mm
Länge:
10 mm
Serie:
TK10A80E
Transistortyp:
1 N-Channel
Breite:
4.5 mm
Marke:
Toshiba
Abfallzeit:
35 ns
Produktart:
MOSFET
Anstiegszeit:
40 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
140 ns
Typische Einschaltverzögerungszeit:
80 ns
Gewichtseinheit:
0.211644 oz
Tags
TK10A80E,S, TK10A80E, TK10A8, TK10A, TK10, TK1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-220SIS Tube
***et
Trans MOSFET N-CH 800V 10A 3-Pin TO-220SIS
***
MOSFET TRAN TO-220SIS 50W /
***i-Key
MOSFET N-CH 800V TO220SIS
***Parts
FETs - Single TO-220SIS Through Hole
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
Teil # Mfg. Beschreibung Aktie Preis
TK10A80E,S4X
DISTI # 30599252		Toshiba America Electronic ComponentsTrans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-220SIS Tube
RoHS: Compliant		50
  • 50:$1.6320
  • 10:$1.6703
  • 9:$3.0728
TK10A80E,S4X
DISTI # TK10A80ES4X-ND		Toshiba America Electronic ComponentsMOSFET N-CH 800V TO220SIS
RoHS: Compliant
Min Qty: 1
Container: Tube		13In Stock
  • 1000:$1.2441
  • 500:$1.5015
  • 100:$1.9305
  • 50:$2.1450
  • 1:$2.6600
TK10A80E,S4X
DISTI # C1S751200962905		Toshiba America Electronic ComponentsMOSFETs
RoHS: Compliant		50
  • 50:$1.2800
  • 10:$1.3100
  • 1:$2.4100
TK10A80E,S4X(S
DISTI # C1S751201056894		Toshiba America Electronic ComponentsMOSFETs60
  • 60:$3.6500
  • 20:$4.0100
TK10A80E,S4X
DISTI # TK10A80E,S4X		Toshiba America Electronic ComponentsTrans MOSFET N-CH 800V 10A 3-Pin TO-220SIS - Rail/Tube (Alt: TK10A80E,S4X)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 0
  • 50:$1.1900
  • 100:$1.0900
  • 200:$0.9900
  • 300:$0.9900
  • 500:$0.9900
TK10A80E,S4X(S
DISTI # TK10A80E,S4X(S		Toshiba America Electronic ComponentsTrans MOSFET N-CH 800V 10A 3-Pin TO-220SIS (Alt: TK10A80E,S4X(S)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.1059
  • 10:€1.0049
  • 25:€0.9209
  • 50:€0.8839
  • 100:€0.8499
  • 500:€0.8189
  • 1000:€0.7899
TK10A80E,S4X
DISTI # 757-TK10A80ES4X		Toshiba America Electronic ComponentsMOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
RoHS: Compliant		17
  • 1:$2.4200
  • 10:$1.9500
  • 100:$1.5600
  • 500:$1.3700
  • 1000:$1.1400
  • 2500:$1.0600
  • 5000:$1.0200
TK10A80E,S4X(S
DISTI # 8276107P		Toshiba America Electronic ComponentsMOSFETNCH800V/10ATO220, BG90
  • 25:£0.8900
  • 50:£0.8460
  • 125:£0.8120
  • 250:£0.7980
TK10A80E,S4X(S
DISTI # 8962647		Toshiba America Electronic ComponentsMOSFETNCH800V/10ATO220, PK30
  • 5:£1.0120
  • 25:£0.8900
  • 50:£0.7800
  • 100:£0.7280
  • 250:£0.6880
TK10A80ES4XToshiba America Electronic Components 
RoHS: Compliant		Europe - 200
    TK10A80E,S4XToshiba America Electronic ComponentsMOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
    RoHS: Compliant    		Americas -
      TK10A80ES4XToshiba America Electronic ComponentsMOSFET MOSFET TRAN TO-220SIS50W /
      RoHS: Compliant      		Americas -
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        Verfügbarkeit
        Aktie:
        200
        Auf Bestellung:
        2183
        Menge eingeben:
        Der aktuelle Preis von TK10A80E,S4X dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        2,42 $
        2,42 $
        10
        1,95 $
        19,50 $
        100
        1,56 $
        156,00 $
        500
        1,37 $
        685,00 $
        1000
        1,14 $
        1 140,00 $
        2500
        1,06 $
        2 650,00 $
        5000
        1,02 $
        5 100,00 $
        10000
        0,98 $
        9 750,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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