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IRLU7807ZPBF

IRLU7807ZPBF
Mfr. #:
IRLU7807ZPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 43A 13.8mOhm 30V 7nC Qg log lvl
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLU7807ZPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU7807ZPBF DatasheetIRLU7807ZPBF Datasheet (P4-P6)IRLU7807ZPBF Datasheet (P7-P9)IRLU7807ZPBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
43 A
Rds On - Drain-Source-Widerstand:
18.2 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
7 nC
Pd - Verlustleistung:
40 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
6.22 mm
Länge:
6.73 mm
Transistortyp:
1 N-Channel
Breite:
2.38 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
75
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001568878
Gewichtseinheit:
0.139332 oz
Tags
IRLU7, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 43A, 13.8 MOHM, 7 NC QG, I-PAK, Pb-Free
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N, 30V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.8mohm; Threshold Voltage Vgs Typ:1.8V; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Package / Case:IPAK; Power Dissipation Pd:40mW; Pulse Current Idm:170A; SMD Marking:40; Termination Type:Through Hole; Transistor Type:Power MOSFET; Turn Off Time:9.8ns; Turn On Time:7.1ns; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
***emi
Power MOSFET 25 V, 45 A, Single N-Channel, DPAK
***ponent Stockers USA
7.8 A 25 V 0.014 ohm N-CHANNEL Si POWER MOSFET
***ser
MOSFETs- Power and Small Signal 25V 45A N-Channel
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N, 25V, I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:25V; Current, Id Cont:45A; Resistance, Rds On:0.0117ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:50W; Voltage, Vds Max:25V
***emi
Power MOSFET 25 V, 45 A, Single N-Channel, DPAK
***ser
MOSFETs- Power and Small Signal 25V 45A N-Channel
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***emi
Power MOSFET 30V 54A 10 mOhm Single N-Channel DPAK
***ser
MOSFETs- Power and Small Signal NFET 30V 54A 10MOHM
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:54A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:50W ;RoHS Compliant: Yes
***ical
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***inecomponents.com
25V,35A,14OHM, NCH, IPAK, POWER TRENCH MOSFET
***Yang
MOSFET 25V N-Channel PowerTrench MOSFET - Bulk
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ical
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:56W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:56W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO251-3, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Teil # Mfg. Beschreibung Aktie Preis
IRLU7807ZPBF
DISTI # IRLU7807ZPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 43A I-PAK
RoHS: Compliant
Min Qty: 900
Container: Tube		Limited Supply - Call
    IRLU7807ZPBF
    DISTI # 70018000    		Infineon Technologies AGMOSFET,N Ch.,30V,43A,13.8 MOHM,7 NC QG,I-PAK,Pb-Free
    RoHS: Compliant    		0
    • 1:$0.5200
    IRLU7807ZPBF
    DISTI # 942-IRLU7807ZPBF    		Infineon Technologies AGMOSFET MOSFT 43A 13.8mOhm 30V 7nC Qg log lvl
    RoHS: Compliant    		0
      IRLU7807ZPBFInternational Rectifier 
      RoHS: Compliant      		Europe - 2250
        IRLU7807ZPBF
        DISTI # 1436997        		Infineon Technologies AG 
        RoHS: Compliant        		0
        • 1:$2.5200
        • 10:$2.0700
        Bild Teil # Beschreibung
        IRLU7843PBF

        Mfr.#: IRLU7843PBF

        OMO.#: OMO-IRLU7843PBF

        		 MOSFET MOSFT 30V 161A 3.3mOhm 34nC Log Lvl
        IRLU7807ZPBF

        Mfr.#: IRLU7807ZPBF

        OMO.#: OMO-IRLU7807ZPBF

        		 MOSFET MOSFT 43A 13.8mOhm 30V 7nC Qg log lvl
        IRLU7807Z

        Mfr.#: IRLU7807Z

        OMO.#: OMO-IRLU7807Z-1190

        		 Neu und Original
        IRLU7821

        Mfr.#: IRLU7821

        OMO.#: OMO-IRLU7821-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 65A I-PAK
        IRLU7821TRR-701

        Mfr.#: IRLU7821TRR-701

        OMO.#: OMO-IRLU7821TRR-701-1190

        		 Neu und Original
        IRLU7833

        Mfr.#: IRLU7833

        OMO.#: OMO-IRLU7833-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 140A I-PAK
        IRLU7843

        Mfr.#: IRLU7843

        OMO.#: OMO-IRLU7843-1190

        		 Neu und Original
        IRLU7833-701PBF

        Mfr.#: IRLU7833-701PBF

        OMO.#: OMO-IRLU7833-701PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 140A IPAK
        IRLU7843-701PBF

        Mfr.#: IRLU7843-701PBF

        OMO.#: OMO-IRLU7843-701PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 161A IPAK
        IRLU7807ZPBF

        Mfr.#: IRLU7807ZPBF

        OMO.#: OMO-IRLU7807ZPBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET MOSFT 43A 13.8mOhm 30V 7nC Qg log lvl
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1000
        Menge eingeben:
        Der aktuelle Preis von IRLU7807ZPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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