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BSC350N20NSFDATMA1
BSC350N20NSFDATMA1
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BSC350N20NSFDATMA1

Mfr. #:
BSC350N20NSFDATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET DIFFERENTIATED MOSFETS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC350N20NSFDATMA1 Datenblatt
ECAD Model:

Verfügbarkeit

Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von BSC350N20NSFDATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Menge
Stückpreis
ext. Preis
1
2,83 $
2,83 $
10
2,41 $
24,10 $
100
1,92 $
192,00 $
500
1,68 $
840,00 $
1000
1,39 $
1 390,00 $
2500
1,30 $
3 250,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
35 A
Rds On - Drain-Source-Widerstand:
31 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
30 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
150 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Serie:
OptiMOS Fast Diode
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
29 S
Abfallzeit:
4.8 ns
Produktart:
MOSFET
Anstiegszeit:
4.8 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
17 ns
Typische Einschaltverzögerungszeit:
8 ns
Teil # Aliase:
BSC350N20NSFD SP001108124
Tags
BSC3, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 200V 35A 8-Pin TDSON T/R
***ark
Mosfet, N-Ch, 200V, 35A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.031Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ineon
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
Teil # Mfg. Beschreibung Aktie Preis
BSC350N20NSFDATMA1
DISTI # BSC350N20NSFDATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 35A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$1.3785
BSC350N20NSFDATMA1
DISTI # BSC350N20NSFDATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 200V 35A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5000In Stock
  • 1000:$1.5837
  • 500:$1.9114
  • 100:$2.4575
  • 10:$3.0580
  • 1:$3.3900
BSC350N20NSFDATMA1
DISTI # BSC350N20NSFDATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 200V 35A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5000In Stock
  • 1000:$1.5837
  • 500:$1.9114
  • 100:$2.4575
  • 10:$3.0580
  • 1:$3.3900
BSC350N20NSFDATMA1
DISTI # BSC350N20NSFDATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 27A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC350N20NSFDATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.2900
  • 10000:$1.2900
  • 20000:$1.1900
  • 30000:$1.1900
  • 50000:$1.1900
BSC350N20NSFDATMA1
DISTI # 24AC4562		Infineon Technologies AGMOSFET, N-CH, 200V, 35A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.031ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes2807
  • 1:$2.8400
  • 10:$2.4100
  • 25:$2.2500
  • 50:$2.0900
  • 100:$1.9300
  • 250:$1.8100
  • 500:$1.6900
  • 1000:$1.4000
BSC350N20NSFDATMA1
DISTI # 726-BSC350N20NSFDATM		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		2953
  • 1:$2.8400
  • 10:$2.4100
  • 100:$1.9300
  • 500:$1.6900
  • 1000:$1.4000
  • 2500:$1.3100
  • 5000:$1.2600
BSC350N20NSFDATMA1
DISTI # 2770033		Infineon Technologies AGMOSFET, N-CH, 200V, 35A, TDSON
RoHS: Compliant		3897
  • 1:£2.5000
  • 10:£1.8700
  • 100:£1.5100
  • 250:£1.4200
  • 500:£1.3200
BSC350N20NSFDATMA1
DISTI # 2770033		Infineon Technologies AGMOSFET, N-CH, 200V, 35A, TDSON
RoHS: Compliant		2807
  • 1:$5.4100
  • 10:$4.8800
  • 100:$3.9200
  • 500:$3.0500
  • 1000:$2.5300
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