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AOTF18N65

AOTF18N65
Mfr. #:
AOTF18N65
Hersteller:
Alpha & Omega Semiconductor Inc
Beschreibung:
MOSFET N-CH 650V 18A TO220F
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AOTF18N65 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AOTF18N65 DatasheetAOTF18N65 Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
AOTF18, AOTF1, AOTF, AOT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ha & Omega Semiconductor SCT
650V N-Channel MOSFET, TO-220F-3, RoHS
***i-Key
MOSFET N-CH 650V 18A TO220-3F
*** Stop Electro
Power Field-Effect Transistor
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.20pF 50volts C0G +/-0.1pF
***ow.cn
Trans MOSFET N-CH 600V 19.3A 3-Pin(3+Tab) TO-220FP Tube
***ineon SCT
Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS
***nell
MOSFET, N-CH, 600V, 19.3A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 19.3A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
***ineon
Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power
***ical
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-220SIS Tube
***
MOSFET TRAN TO-220SIS 40W
***el Nordic
Contact for details
***ical
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-220 Tube
***
POWER MOSFET TRANSISTOR
***icroelectronics
N-Channel 600V - 0.25Ohm - 20A TO-220FP MDmesh™ POWER MOSFET
*** Source Electronics
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 20A TO220FP
***ark
MOSFET, N CHANNEL, 600V, 20A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:-RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in TO-220FP package
*** Source Electronics
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 650V 11A TO-220FP
***ark
MOSFET, N-CH, 650V, 11A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 11A I(D), 650V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ure Electronics
Single N-Channel 650 V 310 mOhm 41 nC CoolMOS™ Power Mosfet - TO-220-3-FP
***ical
Trans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220FP Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.2pF 50volts C0G +/-0.5pF
***ineon SCT
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS
***nell
MOSFET, N-CH, 650V, 11.4A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.4A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
Teil # Mfg. Beschreibung Aktie Preis
AOTF18N65_001
DISTI # AOTF18N65_001-ND		Alpha & Omega SemiconductorMOSFET N-CH TO220
RoHS: Compliant
Container: Tube		Limited Supply - Call
    AOTF18N65
    DISTI # 785-1431-5-ND    		Alpha & Omega SemiconductorMOSFET N-CH 650V 18A TO220F
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Temporarily Out of Stock
    • 1000:$1.3485
    AOTF18N65L
    DISTI # AOTF18N65L-ND    		Alpha & Omega SemiconductorMOSFET N-CH 650V 18A TO220F
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Temporarily Out of Stock
    • 1000:$1.3485
    Bild Teil # Beschreibung
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    OMO.#: OMO-AOTF10N60L-002-ALPHA-AND-OMEGA-SEMICONDUCTOR

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von AOTF18N65 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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