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DMN3190LDW-7

DMN3190LDW-7
Mfr. #:
DMN3190LDW-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN3190LDW-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMN3190LDW-7 DatasheetDMN3190LDW-7 Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-363-6
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
1 A
Rds On - Drain-Source-Widerstand:
190 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.5 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
2 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
0.4 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
DMN3190
Transistortyp:
2 N-Channel
Marke:
Eingebaute Dioden
Vorwärtstranskonduktanz - Min:
0.7 mS
Abfallzeit:
15.6 ns
Produktart:
MOSFET
Anstiegszeit:
8.9 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
30.3 ns
Typische Einschaltverzögerungszeit:
4.5 ns
Gewichtseinheit:
0.000212 oz
Tags
DMN319, DMN31, DMN3, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 30V 1300mA 6-Pin SOT-363 T/R
***ark
Mosfet Bvdss: 25V~30V Sot363 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMN3190LDW-7
***ure Electronics
DMN3190LDW: 30 V 190 mOhm Dual N-Channel Enhancement Mode Mosfet - SOT-363
***ment14 APAC
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1A; Source Voltage Vds:30V; On Resistance
***el Electronic
Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363 Surface Mount 2 N-Channel (Dual) Logic Level Gate -55°C~150°C TJ 190m Ω @ 1.3A, 10V 2.8V @ 250μA MOSFET 2N-CH 30V 1A SOT363
***nell
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 320mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ical
Trans MOSFET N-CH 30V 1.4A Automotive 6-Pin SOT-363 T/R
***nell
MOSFET, N-CH, AUTO, 30V, 1.4A, SOT363; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 500mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 2 Series; Automotive Qualification Standard: AEC-Q101; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***ure Electronics
Dual N-Channel 30 V 2.8 O 0.3 W SMT Enhancement Mode MosFet - SOT-363
***et
Transistor MOSFET Array Dual N-CH 30V 260mA 6-Pin SOT-363 T/R
*** Source Electronics
Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R / MOSFET 2N-CH 30V 0.22A SOT363
***ment14 APAC
MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:260mA; Source Voltage Vds:30V; On
***nell
MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 260mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 400mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***emi
Small Signal MOSFET 30V 3.2A 60 mOhm Single N-Channel SC−88/SC70−6/SOT−363
***ser
MOSFETs- Power and Small Signal NFET 30V 3.2A 60MOHM
***Yang
Trans MOSFET N-CH 30V 2.6A 6-Pin SC-88 T/R - Tape and Reel
***ponent Stockers USA
1800 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET
***r Electronics
Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 30V 1.8A SC88/SC70-6
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.6A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-SC-88 ;RoHS Compliant: Yes
***ure Electronics
Trans MOSFET N-CH 30V 250A Automotive 6-Pin SOT-363 T/R
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***icontronic
Small Signal Field-Effect Transistor, 0.25A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Mosfet Bvdss: 25V~30V Sot363 T&r 3K
***nell
MOSFET, DUAL N-CH, 30V, 0.25A, 0.35W; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:250mA; On Resistance Rds(on):2.4ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V
***et
Trans MOSFET N/P-CH 30V/30V 0.65A/0.45A 6-Pin SOT-363 T/R
***ark
Mosfet, N/P-Ch, 30V, 0.65A, Sot363; Transistor Polarity:N And P Complement; Continuous Drain Current Id:650Ma; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Rohs Compliant: Yes |Diodes Inc. DMC3400SDW-13
***nsix Microsemi
Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N/P-CH, 30V, 0.65A, SOT363; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 650mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 310mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***(Formerly Allied Electronics)
Si1416EDH-T1-GE3 N-channel MOSFET Transistor; 3.9 A; 30 V; 6-Pin SOT-363
***ure Electronics
SI1416EDH Series N-Channel 30 V 3.9 A 12 nC Surface Mount Mosfet - SC-70-6
***nell
MOSFET, N-CH, 30V, 3.9A, SOT-363-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 2.8W; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015)
Teil # Mfg. Beschreibung Aktie Preis
DMN3190LDW-7
DISTI # DMN3190LDW-7DITR-ND		Diodes IncorporatedMOSFET 2N-CH 30V 1A SOT363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.0880
DMN3190LDW-7
DISTI # DMN3190LDW-7DICT-ND		Diodes IncorporatedMOSFET 2N-CH 30V 1A SOT363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.1042
  • 500:$0.1360
  • 100:$0.2402
  • 10:$0.4080
  • 1:$0.5700
DMN3190LDW-7
DISTI # DMN3190LDW-7DIDKR-ND		Diodes IncorporatedMOSFET 2N-CH 30V 1A SOT363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.1042
  • 500:$0.1360
  • 100:$0.2402
  • 10:$0.4080
  • 1:$0.5700
DMN3190LDW-7
DISTI # DMN3190LDW-7		Diodes IncorporatedTrans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R (Alt: DMN3190LDW-7)
RoHS: Compliant
Min Qty: 9000
Container: Tape and Reel		Asia - 0
  • 9000:$0.0836
  • 18000:$0.0799
  • 27000:$0.0765
  • 45000:$0.0744
  • 90000:$0.0734
  • 225000:$0.0715
  • 450000:$0.0697
DMN3190LDW-7
DISTI # DMN3190LDW-7		Diodes IncorporatedTrans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R - Tape and Reel (Alt: DMN3190LDW-7)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0498
  • 6000:$0.0474
  • 12000:$0.0451
  • 18000:$0.0431
  • 30000:$0.0421
DMN3190LDW-7
DISTI # 70550289		Diodes IncorporatedMOSFET Dual N-Ch 30V 1A Enhanc. SOT363
RoHS: Compliant		0
  • 250:$0.1250
  • 500:$0.0910
  • 1250:$0.0790
  • 2500:$0.0730
DMN3190LDW-7
DISTI # 621-DMN3190LDW-7		Diodes IncorporatedMOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
RoHS: Compliant		18789
  • 1:$0.4500
  • 10:$0.2890
  • 100:$0.1240
  • 1000:$0.0950
  • 3000:$0.0720
  • 9000:$0.0640
  • 24000:$0.0600
DMN3190LDW-13
DISTI # 621-DMN3190LDW-13		Diodes IncorporatedMOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
RoHS: Compliant		0
  • 10000:$0.0640
DMN3190LDW-7
DISTI # 8270480P		Zetex / Diodes IncMOSFET DUAL N-CH 30V 1A ENHANC. SOT363, RL15000
  • 250:£0.1020
  • 500:£0.0830
  • 1250:£0.0770
  • 2500:£0.0760
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Verfügbarkeit
Aktie:
146
Auf Bestellung:
2129
Menge eingeben:
Der aktuelle Preis von DMN3190LDW-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,44 $
0,44 $
10
0,29 $
2,89 $
100
0,12 $
12,40 $
1000
0,10 $
95,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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