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IRGS8B60KPBF

IRGS8B60KPBF
Mfr. #:
IRGS8B60KPBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRGS8B60KPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
DPAK-3
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
2.2 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
28 A
Pd - Verlustleistung:
167 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
28 A
Höhe:
4.83 mm
Länge:
10.67 mm
Breite:
9.65 mm
Marke:
Infineon-Technologien
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
50
Unterkategorie:
IGBTs
Teil # Aliase:
SP001545230
Gewichtseinheit:
0.009185 oz
Tags
IRGS8, IRGS, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 28A 167000mW 3-Pin(2+Tab) D2PAK Tube
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:28A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; Power Dissipation, Pd:167W; Package/Case:D2PAK ;RoHS Compliant: Yes
***nell
IGBT, D2-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current, Ic Continuous a Max:28A; Voltage, Vce Sat Max:2.2V; Power Dissipation:167W; Case Style:D2-PAK; Termination Type:SMD; Current, Icm Pulsed:56A; Marking, SMD:GS8B60K; Power, Pd:167W; Time, Fall:42ns; Time, Fall Max:42ns; Time, Rise:21ns; Voltage, Vceo:600V
Teil # Mfg. Beschreibung Aktie Preis
IRGS8B60KPBF
DISTI # 31006187		Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 167000mW 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		550
  • 550:$0.9870
IRGS8B60KPBF
DISTI # IRGS8B60KPBF-ND		Infineon Technologies AGIGBT 600V 28A 167W D2PAK
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
    IRGS8B60KPBF
    DISTI # IRGS8B60KPBF    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(2+Tab) D2PAK - Bulk (Alt: IRGS8B60KPBF)
    Min Qty: 363
    Container: Bulk    		Americas - 0
    • 3630:$0.8769
    • 1815:$0.8939
    • 1089:$0.9289
    • 726:$0.9659
    • 363:$1.0069
    IRGS8B60KPBF
    DISTI # 70018509    		Infineon Technologies AG600V Ultrafast 10-30 kHz COPACK IGBT IN A D2-PAK Package
    RoHS: Compliant    		0
    • 450:$2.4700
    IRGS8B60KPBF
    DISTI # 942-IRGS8B60KPBF    		Infineon Technologies AGIGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT
    RoHS: Compliant    		136
    • 1:$2.0500
    • 10:$1.7400
    • 100:$1.3900
    • 500:$1.2200
    • 1000:$1.0100
    • 2500:$0.9380
    • 5000:$0.9040
    IRGS8B60KPBFInternational RectifierInsulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel
    RoHS: Compliant    		3250
    • 1000:$0.9100
    • 500:$0.9600
    • 100:$1.0000
    • 25:$1.0400
    • 1:$1.1200
    IRGS8B60KPBFInternational Rectifier 100
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      Verfügbarkeit
      Aktie:
      136
      Auf Bestellung:
      2119
      Menge eingeben:
      Der aktuelle Preis von IRGS8B60KPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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