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IRFR18N15DPBF

IRFR18N15DPBF
Mfr. #:
IRFR18N15DPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 150V 18A DPAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFR18N15DPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFR18N15DPBF DatasheetIRFR18N15DPBF Datasheet (P4-P6)IRFR18N15DPBF Datasheet (P7-P9)IRFR18N15DPBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
110 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
9.8 ns
Anstiegszeit
25 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
18 A
Vds-Drain-Source-Breakdown-Voltage
150 V
Vgs-th-Gate-Source-Threshold-Voltage
5.5 V
Rds-On-Drain-Source-Widerstand
125 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
15 ns
Typische-Einschaltverzögerungszeit
8.8 ns
Qg-Gate-Ladung
28 nC
Vorwärts-Transkonduktanz-Min
4.2 S
Kanal-Modus
Erweiterung
Tags
IRFR18, IRFR1, IRFR, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 150V 0.125 Ohm 28 nC HEXFET® Power Mosfet - TO-252AA
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 150V,RDS(ON) 0.125Ohm,ID 18A,D-Pak (TO-252AA),PD 110W
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 150V, 18A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V;
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***ure Electronics
Single N-Channel 150 V 0.18 Ohm 19 nC HEXFET® Power Mosfet - TO-252AA
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 150V,RDS(ON) 0.18Ohm,ID 14A,D-Pak (TO-252AA),PD 86W
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ark
N Channel Mosfet, 150V, 14A, D-Pak; Transistor Polarity:n Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.18Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***emi
N-Channel PowerTrench® MOSFET, 150V, 14A, 120mΩ
***ure Electronics
N-Channel 150 V 120 mOhm Surface Mount PowerTrench Mosfet TO-252-3
***ical
Trans MOSFET N-CH 150V 2.8A Automotive 3-Pin(2+Tab) TO-252AA T/R
***r Electronics
Power Field-Effect Transistor, 14A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ment14 APAC
MOSFET, N, SMD, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:150V; On Resistance Rds(on):101mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:65W; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:14A; Package / Case:TO-252AA; Power Dissipation Pd:65W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***et
Trans MOSFET P-CH -150V, -13A, 295mOHM, 3-Pin(2+Tab) DPAK, Tube
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -150V, 13A, 580 mOhm, 44 nC Qg, D-Pak
***fin
Transistor PNP Mos IRFR6215 INTERNATIONAL RECTIFIER Ampere=13 V=150 TO252/DPAK
***ure Electronics
Single P-Channel 150V 0.295 Ohm 66 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
MOSFET, P-CH, -150V, -13A, TO-252AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Source Voltage Vds:-150V; On Resistance
***roFlash
Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***nell
MOSFET, P-CH, -150V, -13A, TO-252AA; Transistor Polarity: P Channel; Continuous Drain Current Id: -13A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.295ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***emi
N-Channel Power Trench® MOSFET, 150V, 14A, 120mΩ
***p One Stop
Trans MOSFET N-CH 150V 14A Automotive 3-Pin(2+Tab) TO-252 T/R
*** Stop Electro
Power Field-Effect Transistor, 14A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***emi
N-Channel PowerTrench® MOSFET 150V, 21A, 66mΩ
***ure Electronics
N-Channel 150 V 66 mOhm Surface Mount PowerTrench Mosfet - TO-252AA
***nell
MOSFET, N CH, 150V, 21A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
***r Electronics
Power Field-Effect Transistor, 3.7A I(D), 150V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***hard Electronics
Transistor, Mosfet, N-Channel, 60V V(Br)Dss, 20A I(D), To-252Aa Rohs Compliant: Yes
***emi
N-Channel Logic Level UltraFET® Power MOSFET 60V, 20A, 43mΩ
***r Electronics
Power Field-Effect Transistor, 20A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 60V, 20A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.031ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 75W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: UltraFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***emi
N-Channel Power MOSFET, QFET®, 250 V, 16 A, 270 mΩ, DPAK
***ure Electronics
N-Channel 250 V 0.27 Ohm Surface Mount Mosfet - TO-252-3
***ark
N-CHANNEL MOSFET; Transistor Type:MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
***roFlash
Power Field-Effect Transistor, 16A I(D), 250V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N CH, 250V, 16A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
Automotive-grade N-channel 200 V, 0.10 Ohm typ., 18 A StripFET Power MOSFET in DPAK package
*** Source Electronics
Trans MOSFET N-CH 200V 18A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 200V 18A DPAK
***ure Electronics
Single N-Channel 200 V 110 W 39 nC Silicon Surface Mount Mosfet - TO-252-3
***nell
MOSFET, AEC-Q101, N-CH, 200V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***r Electronics
Power Field-Effect Transistor, 18A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***emi
N-Channel Power MOSFET, QFET®, 200 V, 15 A, 140 mΩ, DPAK
***ure Electronics
N-Channel 200 V 140 mOhm Surface Mount Mosfet - TO-252
***ment14 APAC
N CHANNEL MOSFET, 200V, 15mA; Transistor; N CHANNEL MOSFET, 200V, 15mA; Transistor Polarity:N Channel; Continuous Drain Current Id:15mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; No. of Pins:3
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***Yang
MOSFET 25V 20A N-Channel PowerTrench - Bulk
***i-Key
MOSFET N-CH 25V 20A DPAK
*** Services
CoC and 2-years warranty / RFQ for pricing
***ter Electronics
PT6 NCH MOSFET
***el Nordic
Contact for details
***icroelectronics
N-channel 200 V, 0.10 Ohm typ., 18 A StripFET Power MOSFET in DPAK package
*** Source Electronics
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 200V 18A DPAK
***ment14 APAC
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:18A; On State resistance @ Vgs = 10V:125mohm; Package / Case:DPAK; Power Dissipation Pd:90W; Pulse Current Idm:72A; SMD Marking:20NF20; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Teil # Mfg. Beschreibung Aktie Preis
IRFR18N15DPBF
DISTI # V36:1790_13892162		Infineon Technologies AGTrans MOSFET N-CH 150V 18A 3-Pin(2+Tab) DPAK Tube5445
  • 9000:$0.4376
  • 3000:$0.4520
  • 1000:$0.5853
  • 500:$0.6242
  • 100:$0.7403
  • 10:$1.0531
  • 1:$1.1887
IRFR18N15DPBF
DISTI # IRFR18N15DPBF-ND		Infineon Technologies AGMOSFET N-CH 150V 18A DPAK
RoHS: Compliant
Min Qty: 6000
Container: Tube		Limited Supply - Call
    IRFR18N15DPBF
    DISTI # 27625493    		Infineon Technologies AGTrans MOSFET N-CH 150V 18A 3-Pin(2+Tab) DPAK Tube5445
    • 3000:$0.4520
    • 1000:$0.5853
    • 500:$0.6242
    • 100:$0.7403
    • 13:$1.0531
    IRFR18N15DPBF
    DISTI # 27073535    		Infineon Technologies AGTrans MOSFET N-CH 150V 18A 3-Pin(2+Tab) DPAK Tube567
    • 60000:$0.4665
    • 30000:$0.4751
    • 18000:$0.4914
    • 12000:$0.5097
    • 6000:$0.5289
    IRFR18N15DPBF
    DISTI # IRFR18N15DPBF    		Infineon Technologies AGTrans MOSFET N-CH 150V 18A 3-Pin(2+Tab) DPAK - Rail/Tube (Alt: IRFR18N15DPBF)
    RoHS: Compliant
    Min Qty: 6000
    Container: Tube    		Americas - 163
      IRFR18N15DPBF.
      DISTI # 27AC6817      		Infineon Technologies AGPLANAR_MOSFETS ROHS COMPLIANT: YES0
        IRFR18N15DPBF
        DISTI # 70018316        		Infineon Technologies AGIRFR18N15DPBF N-channel MOSFET Transistor,18 A,150 V,3-Pin DPAK
        RoHS: Compliant        		0
        • 6000:$1.2200
        IRFR18N15DPBFInternational Rectifier 
        RoHS: Not Compliant        		2266
        • 1000:$0.6300
        • 500:$0.6700
        • 100:$0.6900
        • 25:$0.7200
        • 1:$0.7800
        IRFR18N15DPBF
        DISTI # 942-IRFR18N15DPBF        		Infineon Technologies AGMOSFET 150V 1 N-CH HEXFET 125mOhms 28nC
        RoHS: Compliant        		5243
        • 1:$1.5800
        • 10:$1.3500
        • 100:$1.0300
        • 500:$0.9100
        • 1000:$0.7190
        • 3000:$0.6370
        • 9000:$0.6130
        IRFR18N15DPBF
        DISTI # 5430923P        		Infineon Technologies AGMOSFET N-CHANNEL 150V 18A DPAK, TU569
        • 15:£0.8800
        • 38:£0.7800
        IRFR18N15DPBF
        DISTI # 5430923        		Infineon Technologies AGMOSFET N-CHANNEL 150V 18A DPAK, EA20
        • 1:£2.0000
        • 15:£0.8800
        • 38:£0.7800
        IRFR18N15DPBF
        DISTI # IRFR18N15DPBF        		Infineon Technologies AGTransistor: N-MOSFET,unipolar,150V,18A,110W,DPAK26
        • 1:$0.7300
        • 3:$0.6500
        • 10:$0.5300
        • 75:$0.4800
        IRFR18N15DPBF
        DISTI # 9103104        		Infineon Technologies AGMOSFET, N, TO-252
        RoHS: Compliant        		57
        • 5:£0.9770
        • 25:£0.8620
        • 100:£0.7470
        • 250:£0.7040
        • 500:£0.6600
        IRFR18N15DPBF
        DISTI # 9103104        		Infineon Technologies AGMOSFET, N, TO-252
        RoHS: Compliant        		117
        • 5:$0.7040
        Bild Teil # Beschreibung
        IRFR18N15DTRPBF

        Mfr.#: IRFR18N15DTRPBF

        OMO.#: OMO-IRFR18N15DTRPBF

        		 MOSFET MOSFT 150V 18A 125mOhm 28nC
        IRFR18N15DTRLP

        Mfr.#: IRFR18N15DTRLP

        OMO.#: OMO-IRFR18N15DTRLP

        		 MOSFET PLANAR_MOSFETS
        IRFR18N15DTRPBF-CUT TAPE

        Mfr.#: IRFR18N15DTRPBF-CUT TAPE

        OMO.#: OMO-IRFR18N15DTRPBF-CUT-TAPE-1190

        		 Neu und Original
        IRFR18N15DTRPBF

        Mfr.#: IRFR18N15DTRPBF

        OMO.#: OMO-IRFR18N15DTRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 150V 18A DPAK
        IRFR18N15D

        Mfr.#: IRFR18N15D

        OMO.#: OMO-IRFR18N15D-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 150V 18A DPAK
        IRFR18N15DPBF

        Mfr.#: IRFR18N15DPBF

        OMO.#: OMO-IRFR18N15DPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 150V 18A DPAK
        IRFR18N15DTR

        Mfr.#: IRFR18N15DTR

        OMO.#: OMO-IRFR18N15DTR-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 150V 18A DPAK
        IRFR18N15DTRLP

        Mfr.#: IRFR18N15DTRLP

        OMO.#: OMO-IRFR18N15DTRLP-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 150V 18A DPAK
        IRFR18N15DTRLPBF

        Mfr.#: IRFR18N15DTRLPBF

        OMO.#: OMO-IRFR18N15DTRLPBF-1190

        		 Neu und Original
        IRFR18N15DTRRP

        Mfr.#: IRFR18N15DTRRP

        OMO.#: OMO-IRFR18N15DTRRP-INFINEON-TECHNOLOGIES

        		 RF Bipolar Transistors MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5500
        Menge eingeben:
        Der aktuelle Preis von IRFR18N15DPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,66 $
        0,66 $
        10
        0,62 $
        6,24 $
        100
        0,59 $
        59,08 $
        500
        0,56 $
        278,95 $
        1000
        0,53 $
        525,10 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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