AS4C64M16D1A-6BINTR

AS4C64M16D1A-6BINTR
Mfr. #:
AS4C64M16D1A-6BINTR
Hersteller:
Alliance Memory
Beschreibung:
DRAM 1G 64Mx16 166MHz 2.5V DDR1 IT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AS4C64M16D1A-6BINTR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
AS4C64M16D1A-6BINTR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Allianzgedächtnis
Produktkategorie:
DRAM
RoHS:
Y
Typ:
SDRAM - DDR
Datenbusbreite:
16 bit
Organisation:
64 M x 16
Paket / Koffer:
FBGA-60
Speichergröße:
1 Gbit
Maximale Taktfrequenz:
166 MHz
Zugriffszeit:
0.7 ns
Versorgungsspannung - Max.:
2.7 V
Versorgungsspannung - Min.:
2.3 V
Versorgungsstrom - Max.:
180 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Serie:
AS4C64M16D1A
Verpackung:
Spule
Marke:
Allianzgedächtnis
Montageart:
SMD/SMT
Feuchtigkeitsempfindlich:
ja
Produktart:
DRAM
Werkspackungsmenge:
1000
Unterkategorie:
Speicher & Datenspeicherung
Tags
AS4C64M16D1A, AS4C64M16D1, AS4C64M16D, AS4C64M1, AS4C6, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR1 Synchronous DRAM
Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Bild Teil # Beschreibung
AS4C64M16D2B-25BCN

Mfr.#: AS4C64M16D2B-25BCN

OMO.#: OMO-AS4C64M16D2B-25BCN

DRAM 1G, 1.8V, 64M x 16 DDR2 C Temp
AS4C64M16D2-25BCNTR

Mfr.#: AS4C64M16D2-25BCNTR

OMO.#: OMO-AS4C64M16D2-25BCNTR

DRAM 1G, 1.8V, 64M x 16 DDR2
AS4C64M16D3LA-12BAN

Mfr.#: AS4C64M16D3LA-12BAN

OMO.#: OMO-AS4C64M16D3LA-12BAN

DRAM 1G 1.35V 800MHz 64M x 16 DDR3
AS4C64M16D1-6TINTR

Mfr.#: AS4C64M16D1-6TINTR

OMO.#: OMO-AS4C64M16D1-6TINTR-ALLIANCE-MEMORY

DDR SDRAM 1GB 64M x 16 2.5V 66pin TSOP II
AS4C64M16D3-12BANTR

Mfr.#: AS4C64M16D3-12BANTR

OMO.#: OMO-AS4C64M16D3-12BANTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA Automotive, AEC-Q100
AS4C64M16MD1-6BCN

Mfr.#: AS4C64M16MD1-6BCN

OMO.#: OMO-AS4C64M16MD1-6BCN-ALLIANCE-MEMORY

DRAM 1G 1.8V 166Mhz 64M x 16 Mobile DDR
AS4C64M16D3L-12BIN

Mfr.#: AS4C64M16D3L-12BIN

OMO.#: OMO-AS4C64M16D3L-12BIN-ALLIANCE-MEMORY

DRAM 1G 1.35V 1600Mhz 64M x 16 DDR3
AS4C64M16D3LB-12BAN

Mfr.#: AS4C64M16D3LB-12BAN

OMO.#: OMO-AS4C64M16D3LB-12BAN-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA Automotive, AEC-Q100
AS4C64M16D3LB-12BCNTR

Mfr.#: AS4C64M16D3LB-12BCNTR

OMO.#: OMO-AS4C64M16D3LB-12BCNTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA
AS4C64M16MD2A-25BCN

Mfr.#: AS4C64M16MD2A-25BCN

OMO.#: OMO-AS4C64M16MD2A-25BCN-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 134FBGA
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von AS4C64M16D1A-6BINTR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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