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CSD17505Q5A

CSD17505Q5A
Mfr. #:
CSD17505Q5A
Beschreibung:
MOSFET 30V,NCh NexFET Power MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD17505Q5A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CSD17505Q5A Mehr Informationen CSD17505Q5A Product Details
Produkteigenschaft
Attributwert
Hersteller:
Texas Instruments
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
VSONP-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
4.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
10 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.2 W
Aufbau:
Single
Handelsname:
NexFET
Verpackung:
Spule
Höhe:
1 mm
Länge:
6 mm
Serie:
CSD17505Q5A
Transistortyp:
1 N-Channel
Typ:
Leistungs-MOSFET
Breite:
4.9 mm
Marke:
Texas Instruments
Abfallzeit:
6.1 ns
Produktart:
MOSFET
Anstiegszeit:
11.5 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.011640 oz
Tags
CSD1750, CSD175, CSD17, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***s
    S***s
    RU

    Shipping long, track not tracked, everything works checked can be taken

    2019-04-20
    B***v
    B***v
    RU

    Very warm, if more than 10 seconds will stand then 100% all will burn, shorter poop this, does not correspond to reality!

    2019-05-14
***as Instruments
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.5 mOhm 8-VSONP -55 to 150
***ical
Trans MOSFET N-CH 30V 24A 8-Pin VSONP EP T/R
***ark
N CHANNEL, POWER MOSFET, 30V, 100A, SON-8
***el Electronic
MOSFET 30V,NCh NexFET Power MOSFET
***i-Key
MOSFET N-CH 30V 24A/100A 8VSON
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET, N CH, 30V,24A,8SON; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):2900µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SON; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:3.2W; Voltage Vgs Max:1.3V
***OMO Electronic
The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
CSD17505Q5A 30V, NexFET™ Power MOSFET
OMO Electronic CSD17505Q5A 30V, N-Channel NexFET™ Power MOSFET is designed to minimize losses in power conversion applications. TI CSD17505Q5A N-Channel NexFET Power MOSFET features ultralow gate charge total (4.5V) of 10nC (typical) and ultralow gate charge gate to drain of 2.7nC (typical). TI CSD17505Q5A NexFET Power MOSFET offers low thermal resistance and are optimized for control and synchronous FET applications. They are also ideal for point-of-load synchronous buck in networking, telecom, and computing systems. Learn More
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Teil # Beschreibung Aktie Preis
CSD17505Q5A
DISTI # 296-28082-1-ND		MOSFET N-CH 30V 100A 8SON
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)		269In Stock
  • 1000:$0.8789
  • 500:$1.0608
  • 100:$1.3638
  • 10:$1.6970
  • 1:$1.8800
CSD17505Q5A
DISTI # 296-28082-6-ND		MOSFET N-CH 30V 100A 8SON
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®		269In Stock
  • 1000:$0.8789
  • 500:$1.0608
  • 100:$1.3638
  • 10:$1.6970
  • 1:$1.8800
CSD17505Q5A
DISTI # 296-28082-2-ND		MOSFET N-CH 30V 100A 8SON
RoHS: Not compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 5000:$0.7651
  • 2500:$0.7945
CSD17505Q5A
DISTI # CSD17505Q5A		Trans MOSFET N-CH 30V 24A 8-Pin SON T/R - Tape and Reel (Alt: CSD17505Q5A)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.7759
  • 5000:$0.7379
  • 10000:$0.7139
  • 15000:$0.6899
  • 25000:$0.6709
CSD17505Q5A
DISTI # CSD17505Q5A		Trans MOSFET N-CH 30V 24A 8-Pin SON T/R (Alt: CSD17505Q5A)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€1.0749
  • 5000:€0.8789
  • 10000:€0.8059
  • 15000:€0.6909
  • 25000:€0.6449
CSD17505Q5A30V, N-Channel NexFET&#153,Power MOSFET with 20 Volt Vgs5000
  • 1000:$0.6100
  • 750:$0.6800
  • 500:$0.8500
  • 250:$1.0400
  • 100:$1.1300
  • 25:$1.3200
  • 10:$1.4300
  • 1:$1.6000
CSD17505Q5A
DISTI # 595-CSD17505Q5A		MOSFET 30V,NCh NexFET Power MOSFET
RoHS: Compliant		220
  • 1:$1.5800
  • 10:$1.3400
  • 100:$1.0700
  • 500:$0.9370
  • 1000:$0.7760
  • 2500:$0.7230
CSD17505Q5APower Field-Effect Transistor, 24A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET
RoHS: Compliant		7781
  • 1000:$0.6600
  • 500:$0.7000
  • 100:$0.7300
  • 25:$0.7600
  • 1:$0.8100
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 MOSFET 30V, N ch NexFET MOSFETG , single SON5x6, 4.2mOhm 8-VSONP -55 to 150
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von CSD17505Q5A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,58 $
1,58 $
10
1,34 $
13,40 $
100
1,07 $
107,00 $
500
0,94 $
468,50 $
1000
0,78 $
776,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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