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IRF8707PBF

IRF8707PBF
Mfr. #:
IRF8707PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF8707PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8707PBF DatasheetIRF8707PBF Datasheet (P4-P6)IRF8707PBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
11 A
Rds On - Drain-Source-Widerstand:
17.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
6.2 nC
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Breite:
3.9 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
95
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001560112
Gewichtseinheit:
0.019048 oz
Tags
IRF870, IRF87, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon
***ied Electronics & Automation
IRF8707PBF N-channel MOSFET Transistor,11 A, 30 V, 8-Pin SOIC
***p One Stop Global
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC Tube
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***trelec
MOSFET Operating temperature: -55...+150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W
***ical
Trans MOSFET N-CH 30V 11A 8-Pin SOIC Tube
***p One Stop Japan
Trans MOSFET N-CH 30V 11A 8-Pin SOIC
***ment14 APAC
场效应管, N 通道, MOSFET, 30V, 11A, SOIC;
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***i-Key
MOSFET N-CH 30V 11A 8-SOIC
***ronik
N-CH 30V 11A 11,9mOhm SO8 RoHSconf
***ukat
N-Ch 30V 11A 2,5W 0,0119R SO8
***ark
Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):11.9mohm; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V; Total Gate Charge:6.2nC; No. of Pins:8 ;RoHS Compliant: Yes
***nell
MOSFET, N SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:30V; Cont Current Id:11A; On State Resistance:0.0119ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:SO-8 (SOIC-8); Termination Type:SMD; Max Voltage Vds:30V; Power Dissipation Pd:2.5W; Pulse Current Idm:88A; Typ Charge Qrr @ Tj = 25°C:6.2nC; Voltage Vds:30V; Transistor Case Style:SO
Teil # Mfg. Beschreibung Aktie Preis
IRF8707PBF
DISTI # IRF8707PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRF8707PBF
    DISTI # 58M7423    		Infineon Technologies AGN CHANNEL MOSFET, 30V, 11A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0119ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V RoHS Compliant: Yes129
    • 1:$0.5360
    • 10:$0.4480
    • 100:$0.2730
    • 500:$0.2430
    • 1000:$0.2110
    • 2500:$0.1810
    • 10000:$0.1670
    IRF8707PBF
    DISTI # 942-IRF8707PBF    		Infineon Technologies AGMOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC
    RoHS: Compliant    		0
      IRF8707PBFInternational RectifierPower Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA
      RoHS: Compliant      		5225
      • 1000:$0.2000
      • 500:$0.2100
      • 100:$0.2200
      • 25:$0.2300
      • 1:$0.2400
      IRF8707PBF
      DISTI # 495871      		Infineon Technologies AGMOSFET N-CHANNEL 30V 11A HEXFET SOIC8, PK375
      • 10:£0.4360
      • 50:£0.3700
      • 200:£0.3270
      • 500:£0.2830
      IRF8707TRPBF
      DISTI # IRF8707PBF-GURT      		Infineon Technologies AGN-Ch 30V 11A 2,5W 0,0119R SO8
      RoHS: Compliant      		0
      • 50:€0.2050
      • 100:€0.1650
      • 500:€0.1450
      • 2000:€0.1395
      IRF8707PBF
      DISTI # 1551900      		Infineon Technologies AGMOSFET, N SO-8
      RoHS: Compliant      		0
      • 1:$0.9970
      • 10:$0.8340
      • 100:$0.5090
      • 1000:$0.3930
      • 2500:$0.3580
      Bild Teil # Beschreibung
      IRF8707TRPBF

      Mfr.#: IRF8707TRPBF

      OMO.#: OMO-IRF8707TRPBF

      		 MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC Qg
      IRF8707TRPBF

      Mfr.#: IRF8707TRPBF

      OMO.#: OMO-IRF8707TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 11A 8-SOIC
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von IRF8707PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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