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R6047ENZ1C9

R6047ENZ1C9
Mfr. #:
R6047ENZ1C9
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET 10V Drive Nch MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
R6047ENZ1C9 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
R6047ENZ1C9 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
47 A
Rds On - Drain-Source-Widerstand:
72 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
145 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
120 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 N-channel
Marke:
ROHM Halbleiter
Vorwärtstranskonduktanz - Min:
13 S
Abfallzeit:
100 ns
Produktart:
MOSFET
Anstiegszeit:
100 ns
Werkspackungsmenge:
450
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
260 ns
Typische Einschaltverzögerungszeit:
50 ns
Teil # Aliase:
R6047ENZ1
Gewichtseinheit:
0.229281 oz
Tags
R6047ENZ1, R6047E, R6047, R604, R60
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Bulk
***S
French Electronic Distributor since 1988
***nell
MOSFET, N-CH, 600V, 47A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 47A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.066ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 120W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***et
Transistor MOSFET N-Channel 600V 53.5A 3-Pin TO-247 Tube
***ure Electronics
N-Channel 600 V 53.5 A 70 mO 100 nC CoolMOS P6 Power Transistor - TO-247
***ark
MOSFET, N-CH, 600V, 53.5A, 150DEG C/391W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:53.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***icroelectronics
N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package
***ure Electronics
N-Channel 600 V 79 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247
***nell
MOSFET, N-CH, 600V, 40A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
***et
Transistor MOSFET N-Channel 650V 33A 3-Pin TO-247 Tube
*** Stop Electro
Power Field-Effect Transistor, 33A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ark
Mosfet, N-Ch, 650V, 33A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***icroelectronics
N-channel 650 V, 0.052 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package
***el Electronic
STMICROELECTRONICS STW56N65DM2 Power MOSFET, N Channel, 49 A, 650 V, 0.049 ohm, 10 V, 3 V
***nell
MOSFET, N-CH, 650V, 49A, TO247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 49A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.049ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
***icroelectronics
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-247 package
***p One Stop Global
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-247 Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N CH, 650V, 33A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:190W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
***ure Electronics
Single N-Channel 600 V 60 mOhm 68 nC CoolMOS™ Power Mosfet - TO-247-3
***nell
MOSFET, N-CH, 600V, 35A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Po
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
ROHM R6047ENZ1 N-Channel Power MOSFET
ROHM R6047ENZ1 N-Channel Power MOSFET has low on-resistance and fast switching speed. It has a gate-source voltage (VGSS) guaranteed to be 20V. Drive circuits can be simple and parallel use is easy. It has a Pb-free lead plating and is RoHS compliant.
Teil # Mfg. Beschreibung Aktie Preis
R6047ENZ1C9
DISTI # R6047ENZ1C9-ND		ROHM SemiconductorMOSFET N-CH 600V 47A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		164In Stock
  • 900:$4.3245
  • 450:$4.7430
  • 25:$5.7196
  • 10:$5.9990
  • 1:$6.6400
R6047ENZ1C9
DISTI # R6047ENZ1C9		ROHM SemiconductorTrans MOSFET N-CH 600V ±47A 3-Pin TO-247 Tube (Alt: R6047ENZ1C9)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 250:€3.8600
  • 100:€5.1200
  • 50:€5.6800
  • 10:€6.2300
  • 5:€6.9200
  • 1:€7.5700
R6047ENZ1C9
DISTI # R6047ENZ1C9		ROHM SemiconductorTrans MOSFET N-CH 600V ±47A 3-Pin TO-247 Tube - Tape and Reel (Alt: R6047ENZ1C9)
RoHS: Compliant
Min Qty: 450
Container: Reel		Americas - 0
    R6047ENZ1C9
    DISTI # 99Y2419    		ROHM SemiconductorMOSFET, N-CH, 600V, 47A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:47A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.066ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes0
    • 250:$4.7500
    • 100:$4.9700
    • 50:$5.3500
    • 25:$5.7200
    • 10:$6.0000
    • 1:$6.6400
    R6047ENZ1C9
    DISTI # 755-R6047ENZ1C9    		ROHM SemiconductorMOSFET 10V Drive Nch MOSFET
    RoHS: Compliant    		481
    • 1:$6.6400
    • 10:$6.0000
    • 25:$5.7200
    • 100:$4.9700
    • 250:$4.7500
    • 450:$4.3300
    • 900:$3.7700
    R6047ENZ1C9ROHM Semiconductor 315
    • 184:$10.0160
    • 87:$10.9550
    • 1:$14.0850
    R6047ENZ1C9ROHM Semiconductor 450
    • 1:¥113.3480
    • 100:¥64.2683
    • 450:¥40.7461
    R6047ENZ1C9ROHM SemiconductorRoHS(ship within 1day)394
    • 1:$8.4700
    • 10:$6.9700
    • 50:$6.6800
    • 100:$6.5000
    • 500:$6.3600
    • 1000:$6.2600
    R6047ENZ1C9
    DISTI # 2630122    		ROHM SemiconductorMOSFET, N-CH, 600V, 47A, TO-247
    RoHS: Compliant    		26
    • 10:£2.9200
    • 5:£2.9300
    • 1:£2.9400
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    Verfügbarkeit
    Aktie:
    481
    Auf Bestellung:
    2464
    Menge eingeben:
    Der aktuelle Preis von R6047ENZ1C9 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,64 $
    6,64 $
    10
    6,00 $
    60,00 $
    25
    5,72 $
    143,00 $
    100
    4,97 $
    497,00 $
    250
    4,75 $
    1 187,50 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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