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IXFB210N30P3

IXFB210N30P3
Mfr. #:
IXFB210N30P3
Hersteller:
Littelfuse
Beschreibung:
MOSFET N-Channel: Power MOSFET w/Fast Diode
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFB210N30P3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFB210N30P3 DatasheetIXFB210N30P3 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFB210N30P3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
PLUS-264-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
300 V
Id - Kontinuierlicher Drainstrom:
210 A
Rds On - Drain-Source-Widerstand:
14.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
268 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.89 kW
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
26.59 mm
Länge:
20.29 mm
Serie:
IXFB210N30
Transistortyp:
1 N-Channel
Typ:
Polar3 HiPerFET Power MOSFET
Breite:
5.31 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
60 S
Abfallzeit:
13 ns
Produktart:
MOSFET
Anstiegszeit:
25 ns
Werkspackungsmenge:
25
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
94 ns
Typische Einschaltverzögerungszeit:
46 ns
Gewichtseinheit:
0.056438 oz
Tags
IXFB, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET TRANSISTOR, N CHANNEL, 210 A, 300 V, 0.0145 OHM, 10 V, 5 V ROHS COMPLIANT: YES
***Components
In a Tube of 25, N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3
***ical
Trans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 264
***ure Electronics
300V, 210A, 14.5mOhm, N-Channel, PLUS264, Polar3 HiPerFET
***i-Key
MOSFET N-CH 300V 210A PLUS264
***p One Stop Global
POLAR3 HIPERFET POWER MOSFET
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 300V, 210A, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.0145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.89kW; Transistor Case Style:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, CANALE N, 300V, 210A, TO-264; Polarità Transistor:Canale N; Corrente Continua di Drain Id:210A; Tensione Drain Source Vds:300V; Resistenza di Attivazione Rds(on):0.0145ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:1.89kW; Modello Case Transistor:TO-264; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFB210N30P3
DISTI # V99:2348_15877078		IXYS CorporationTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 2643
  • 500:$14.2600
  • 250:$14.3400
  • 100:$15.7800
  • 50:$16.4200
  • 25:$17.3400
  • 10:$19.4200
  • 5:$19.9400
  • 1:$20.9800
IXFB210N30P3
DISTI # V36:1790_15877078		IXYS CorporationTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 2640
    IXFB210N30P3
    DISTI # IXFB210N30P3-ND    		IXYS CorporationMOSFET N-CH 300V 210A PLUS264
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		34In Stock
    • 500:$14.7420
    • 100:$16.6374
    • 25:$17.9012
    • 10:$19.4810
    • 1:$21.0600
    IXFB210N30P3
    DISTI # 32748824    		IXYS CorporationTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 264100
    • 100:$16.4710
    • 25:$17.7222
    • 1:$20.8494
    IXFB210N30P3
    DISTI # 30535702    		IXYS CorporationTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 2643
    • 500:$14.2600
    • 250:$14.3400
    • 100:$15.7800
    • 50:$16.4200
    • 25:$17.3400
    • 10:$19.4200
    • 5:$19.9400
    • 1:$20.9800
    IXFB210N30P3
    DISTI # 68X2857    		IXYS CorporationMOSFET Transistor, N Channel, 210 A, 300 V, 0.0145 ohm, 10 V, 5 V RoHS Compliant: Yes95
    • 250:$15.4200
    • 100:$16.8000
    • 50:$17.3100
    • 25:$18.0800
    • 10:$19.6700
    • 5:$20.2100
    • 1:$21.2700
    IXFB210N30P3
    DISTI # 747-IXFB210N30P3    		IXYS CorporationMOSFET N-Channel: Power MOSFET w/Fast Diode
    RoHS: Compliant    		411
    • 1:$21.0600
    • 5:$20.0100
    • 10:$19.4800
    • 25:$17.9000
    • 50:$17.1400
    • 100:$16.6300
    • 250:$15.2700
    • 500:$14.5300
    IXFB210N30P3
    DISTI # 8024357    		IXYS CorporationMOSFET 300V 210A POLAR3 HIPERFET PLUS264, EA5
    • 13:£16.8700
    • 1:£18.2900
    IXFB210N30P3
    DISTI # 8024357P    		IXYS CorporationMOSFET 300V 210A POLAR3 HIPERFET PLUS264, TU44
    • 13:£16.8700
    IXFB210N30P3
    DISTI # IXFB210N30P3    		IXYS CorporationTransistor: N-MOSFET,Polar3™,unipolar,300V,210A,1890W,250ns62
    • 1:$21.7700
    • 5:$19.6300
    • 25:$17.3700
    IXFB210N30P3
    DISTI # 2429705    		IXYS CorporationMOSFET, N CH, 300V, 210A, TO-264
    RoHS: Compliant    		95
    • 100:$25.2100
    • 25:$27.1300
    • 1:$31.9000
    IXFB210N30P3
    DISTI # 2429705    		IXYS CorporationMOSFET, N CH, 300V, 210A, TO-264102
    • 100:£13.2200
    • 50:£13.8700
    • 10:£14.2300
    • 5:£16.1900
    • 1:£16.7300
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    Verfügbarkeit
    Aktie:
    401
    Auf Bestellung:
    2384
    Menge eingeben:
    Der aktuelle Preis von IXFB210N30P3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    21,06 $
    21,06 $
    5
    20,01 $
    100,05 $
    10
    19,48 $
    194,80 $
    25
    17,90 $
    447,50 $
    50
    17,14 $
    857,00 $
    100
    16,63 $
    1 663,00 $
    250
    15,27 $
    3 817,50 $
    500
    14,53 $
    7 265,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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