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IRFU5305PBF

IRFU5305PBF
Mfr. #:
IRFU5305PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT P-Ch -55V -28A 65mOhm 42nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFU5305PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFU5305PBF DatasheetIRFU5305PBF Datasheet (P4-P6)IRFU5305PBF Datasheet (P7-P9)IRFU5305PBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
55 V
Id - Kontinuierlicher Drainstrom:
31 A
Rds On - Drain-Source-Widerstand:
65 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
42 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
110 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
6.22 mm
Länge:
6.73 mm
Transistortyp:
1 P-Channel
Breite:
2.38 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
8 S
Abfallzeit:
63 ns
Produktart:
MOSFET
Anstiegszeit:
66 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
39 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
SP001550274
Gewichtseinheit:
0.139332 oz
Tags
IRFU53, IRFU5, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;I-Pak (TO-251AA);PD 110W
***ure Electronics
Single P-Channel 55 V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-251AA
***ineon SCT
-55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:22A; On Resistance Rds(On):0.065Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes
***ment14 APAC
MOSFET, P, -55V, -28A, I-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:69W; Transistor Case Style:TO-251AA; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:I-PAK; Avalanche Single Pulse Energy Eas:280mJ; Capacitance Ciss Typ:1200pF; Current Iar:16A; Current Id Max:-31A; Current Temperature:25°C; Fall Time tf:63ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; On State resistance @ Vgs = 10V:65mohm; Package / Case:IPAK; Power Dissipation Pd:69W; Power Dissipation Pd:110W; Pulse Current Idm:110A; Repetitive Avalanche Energy Max:6.9mJ; Rise Time:66ns; Termination Type:Through Hole; Turn Off Time:39ns; Turn On Time:14ns; Voltage Vds Typ:-55V
Teil # Mfg. Beschreibung Aktie Preis
IRFU5305PBF
DISTI # V36:1790_13892581		Infineon Technologies AGTrans MOSFET P-CH Si 55V 31A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		342
  • 25000:$0.3338
  • 10000:$0.3392
  • 2500:$0.3489
  • 1000:$0.3827
  • 500:$0.4332
  • 100:$0.4695
  • 10:$0.5474
  • 1:$0.7346
IRFU5305PBF
DISTI # IRFU5305PBF-ND		Infineon Technologies AGMOSFET P-CH 55V 31A I-PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		21127In Stock
  • 1050:$0.5032
  • 525:$0.6374
  • 150:$0.8220
  • 75:$0.9395
  • 1:$1.1700
IRFU5305PBF
DISTI # 31278784		Infineon Technologies AGTrans MOSFET P-CH Si 55V 31A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		2340
  • 1250:$0.3312
  • 300:$0.3600
  • 30:$0.3888
IRFU5305PBF
DISTI # 30651705		Infineon Technologies AGTrans MOSFET P-CH Si 55V 31A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		342
  • 100:$0.4680
  • 21:$0.5440
IRFU5305PBF
DISTI # IRFU5305PBF		Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU5305PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 2606
  • 1:$0.6269
  • 10:$0.5489
  • 25:$0.5469
  • 50:$0.5459
  • 100:$0.4699
  • 500:$0.4619
  • 1000:$0.3699
IRFU5305PBF
DISTI # IRFU5305PBF		Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(3+Tab) IPAK (Alt: IRFU5305PBF)
RoHS: Compliant
Min Qty: 3000		Asia - 0
  • 3000:$0.3286
  • 6000:$0.3194
  • 9000:$0.3108
  • 15000:$0.3026
  • 30000:$0.2987
  • 75000:$0.2949
  • 150000:$0.2911
IRFU5305PBF.
DISTI # 27AC6847		Infineon Technologies AGTransistor Polarity:P Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:-55V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V,Power Dissipation Pd:69W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1:$1.0100
  • 10:$0.8540
  • 100:$0.6560
  • 500:$0.5800
  • 1000:$0.4580
  • 5000:$0.4060
IRFU5305PBF
DISTI # 70017193		Infineon Technologies AGMOSFET,Power,P-Ch,VDSS -55V,RDS(ON) 0.065Ohm,ID -31A,I-Pak (TO-251AA),PD 110W
RoHS: Compliant		1061
  • 1:$1.1730
  • 10:$1.0350
  • 100:$0.9020
  • 500:$0.7820
  • 1000:$0.6900
IRFU5305PBFInfineon Technologies AGPower Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Compliant		1205
  • 1000:$0.3700
  • 500:$0.3900
  • 100:$0.4000
  • 25:$0.4200
  • 1:$0.4500
IRFU5305PBFInfineon Technologies AGSingle P-Channel 55 V 0.065 Ohm 63 nC HEXFET Power Mosfet - TO-251AA
RoHS: Compliant		3000Tube
  • 25:$0.4850
  • 300:$0.4350
  • 1250:$0.3850
IRFU5305PBF
DISTI # 942-IRFU5305PBF		Infineon Technologies AGMOSFET MOSFT P-Ch -55V -28A 65mOhm 42nC
RoHS: Compliant		6909
  • 1:$1.0100
  • 10:$0.8540
  • 100:$0.6560
  • 500:$0.5800
  • 1000:$0.4580
  • 2500:$0.4060
IRFU5305PBF
DISTI # 5429951		Infineon Technologies AGMOSFET P-CHANNEL 55V 31A IPAK, EA502
  • 1:£2.0000
  • 20:£0.5000
  • 38:£0.4700
IRFU5305PBF
DISTI # 5429951P		Infineon Technologies AGMOSFET P-CHANNEL 55V 31A IPAK, TU957
  • 20:£0.5000
  • 38:£0.4700
IRFU5305PBFInternational Rectifier 552
    IRFU5305PBFInternational Rectifier31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA375
    • 69:$0.5180
    • 15:$0.7400
    • 1:$1.4800
    IRFU5305PBF
    DISTI # C1S327400097327    		Infineon Technologies AGTrans MOSFET P-CH Si 55V 31A 3-Pin(3+Tab) IPAK Tube
    RoHS: Compliant    		1288
    • 100:$0.5380
    • 50:$0.6160
    • 10:$0.9160
    • 5:$1.0700
    IRFU5305PBF
    DISTI # C1S322000497029    		Infineon Technologies AGTrans MOSFET P-CH Si 55V 31A 3-Pin(3+Tab) IPAK Tube
    RoHS: Compliant    		2344
    • 1000:$0.5310
    • 500:$0.5740
    • 100:$0.6400
    • 50:$0.7610
    • 25:$0.8530
    • 5:$1.1700
    IRFU5305PBF
    DISTI # 8650080    		Infineon Technologies AGMOSFET, P, -55V, -28A, I-PAK
    RoHS: Compliant    		600
    • 1:$1.6000
    • 10:$1.3600
    • 100:$1.0400
    • 500:$0.9180
    • 1000:$0.7250
    • 2500:$0.6430
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1990
    Menge eingeben:
    Der aktuelle Preis von IRFU5305PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,00 $
    1,00 $
    10
    0,85 $
    8,54 $
    100
    0,66 $
    65,60 $
    500
    0,58 $
    290,00 $
    1000
    0,46 $
    458,00 $
    3000
    0,41 $
    1 218,00 $
    9000
    0,39 $
    3 519,00 $
    24000
    0,38 $
    9 096,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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