FQI4N90TU

FQI4N90TU
Mfr. #:
FQI4N90TU
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors MOSFET 900V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQI4N90TU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
FAIRCHILD
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Teil-Aliasnamen
FQI4N90TU_NL
Gewichtseinheit
0.073511 oz
Montageart
Durchgangsloch
Paket-Koffer
I2PAK-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
3.13 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
40 ns
Anstiegszeit
70 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
4.2 A
Vds-Drain-Source-Breakdown-Voltage
900 V
Rds-On-Drain-Source-Widerstand
3.3 Ohms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
45 ns
Typische-Einschaltverzögerungszeit
25 ns
Vorwärts-Transkonduktanz-Min
3.5 S
Kanal-Modus
Erweiterung
Tags
FQI4N, FQI4, FQI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,mosfet,n-Channel,900V V(Br)Dss,4.2A I(D),to-262Aa Rohs Compliant: Yes
***emi
N-Channel Power MOSFET, QFET®, 900 V, 4.2 A, 3.3 Ω, I2PAK
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQI4N90TU
DISTI # FQI4N90TU-ND
ON SemiconductorMOSFET N-CH 900V 4.2A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$1.2447
FQI4N90TU
DISTI # FQI4N90TU
ON SemiconductorTrans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail (Alt: FQI4N90TU)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.2029
  • 10:€1.0939
  • 25:€1.0029
  • 50:€0.9629
  • 100:€0.9259
  • 500:€0.8909
  • 1000:€0.8589
FQI4N90TU
DISTI # FQI4N90TU
ON SemiconductorTrans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FQI4N90TU)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.8869
  • 2000:$0.8809
  • 4000:$0.8699
  • 6000:$0.8579
  • 10000:$0.8369
FQI4N90TU
DISTI # 82C4156
ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,4.2A I(D),TO-262AA ROHS COMPLIANT: YES0
  • 5000:$1.0200
  • 2500:$1.0500
  • 1000:$1.3000
  • 500:$1.4500
  • 100:$1.5600
  • 10:$1.9500
  • 1:$2.2900
FQI4N90TUON Semiconductor 
RoHS: Not Compliant
9000
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
FQI4N90TUFairchild Semiconductor Corporation 
RoHS: Not Compliant
842
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
FQI4N90TU
DISTI # 512-FQI4N90TU
ON SemiconductorMOSFET 900V N-Channel QFET
RoHS: Compliant
287
  • 1:$2.5000
  • 10:$2.1300
  • 100:$1.7000
  • 500:$1.4900
  • 1000:$1.2400
  • 2500:$1.1500
  • 5000:$1.1100
Bild Teil # Beschreibung
FQI4N90TU

Mfr.#: FQI4N90TU

OMO.#: OMO-FQI4N90TU

MOSFET 900V N-Channel QFET
FQI40N10

Mfr.#: FQI40N10

OMO.#: OMO-FQI40N10-1190

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Mfr.#: FQI4N20TM

OMO.#: OMO-FQI4N20TM-1190

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FQI4N20TU

Mfr.#: FQI4N20TU

OMO.#: OMO-FQI4N20TU-ON-SEMICONDUCTOR

MOSFET N-CH 200V 3.6A I2PAK
FQI4N20TUFSC

Mfr.#: FQI4N20TUFSC

OMO.#: OMO-FQI4N20TUFSC-1190

Neu und Original
FQI4N25TUFSC

Mfr.#: FQI4N25TUFSC

OMO.#: OMO-FQI4N25TUFSC-1190

Neu und Original
FQI4P40

Mfr.#: FQI4P40

OMO.#: OMO-FQI4P40-1190

Neu und Original
FQI4N90TU

Mfr.#: FQI4N90TU

OMO.#: OMO-FQI4N90TU-ON-SEMICONDUCTOR

IGBT Transistors MOSFET 900V N-Channel QFET
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von FQI4N90TU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,43 $
1,43 $
10
1,36 $
13,62 $
100
1,29 $
129,05 $
500
1,22 $
609,40 $
1000
1,15 $
1 147,10 $
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