OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SCT3080ALHRC11

SCT3080ALHRC11
Mfr. #:
SCT3080ALHRC11
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET 650V 30A 134W SIC 80mOhm TO-247N
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SCT3080ALHRC11 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SCT3080ALHRC11 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247N-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
80 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.7 V
Vgs - Gate-Source-Spannung:
- 4 V, 22 V
Qg - Gate-Ladung:
48 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
134 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
SCT3x
Transistortyp:
1 N-Channel
Marke:
ROHM Halbleiter
Vorwärtstranskonduktanz - Min:
3.8 S
Abfallzeit:
16 ns
Produktart:
MOSFET
Anstiegszeit:
26 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
27 ns
Typische Einschaltverzögerungszeit:
16 ns
Tags
SCT308, SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
AEC-Q101 SiC Power MOSFETs
ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch mode power supplies. The SiC Power MOSFETs can be used to boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles.
Teil # Mfg. Beschreibung Aktie Preis
SCT3080ALHRC11
DISTI # SCT3080ALHRC11-ND		ROHM SemiconductorAUTOMOTIVE GRADE N-CHANNEL SIC P
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 450:$12.3488
  • 25:$14.7388
  • 10:$15.3760
  • 1:$16.7300
SCT3080ALHRC11
DISTI # 02AH4685		ROHM SemiconductorMOSFET, N-CH, 650V, 30A, 175DEG C, 134W,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,Power RoHS Compliant: Yes0
  • 500:$10.3100
  • 250:$10.6500
  • 100:$12.1200
  • 50:$12.8700
  • 25:$14.2500
  • 10:$14.6800
  • 1:$15.6900
SCT3080ALHRC11
DISTI # 755-SCT3080ALHRC11		ROHM SemiconductorMOSFET 650V 30A 134W SIC 80mOhm TO-247N
RoHS: Compliant		450
  • 1:$16.7200
  • 10:$15.3700
  • 25:$14.7400
SCT3080ALHRC11
DISTI # TMOS2741		ROHM SemiconductorSiC-N 650V 80mOhm 30A TO247N
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$11.4900
SCT3080ALHRC11
DISTI # 3052184		ROHM SemiconductorMOSFET, N-CH, 650V, 30A, 175DEG C, 134W
RoHS: Compliant		0
  • 100:$17.3800
  • 50:$18.3700
  • 10:$19.4300
  • 5:$21.9100
  • 1:$22.5300
SCT3080ALHRC11ROHM SemiconductorMOSFET 650V 30A 134W SIC 80mOhm TO-247N
RoHS: Compliant		Americas -
    SCT3080ALHRC11
    DISTI # 3052184    		ROHM SemiconductorMOSFET, N-CH, 650V, 30A, 175DEG C, 134W0
    • 100:£10.3400
    • 50:£10.8000
    • 10:£11.2500
    • 5:£13.3800
    • 1:£13.5000
    Bild Teil # Beschreibung
    SCT3080ALHRC11

    Mfr.#: SCT3080ALHRC11

    OMO.#: OMO-SCT3080ALHRC11

    		 MOSFET 650V 30A 134W SIC 80mOhm TO-247N
    SCT3080KLHRC11

    Mfr.#: SCT3080KLHRC11

    OMO.#: OMO-SCT3080KLHRC11

    		 MOSFET 1200V 31A 165W SIC 80mOhm TO-247N
    SCT3080ALGC11

    Mfr.#: SCT3080ALGC11

    OMO.#: OMO-SCT3080ALGC11

    		 MOSFET N-Ch 650V 30A Silicon Carbide SiC
    SCT3080KLGC11

    Mfr.#: SCT3080KLGC11

    OMO.#: OMO-SCT3080KLGC11

    		 MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS
    SCT3080KLGC11

    Mfr.#: SCT3080KLGC11

    OMO.#: OMO-SCT3080KLGC11-ROHM-SEMI

    		 MOSFET NCH 1.2KV 31A TO247N
    SCT3080ALGC11

    Mfr.#: SCT3080ALGC11

    OMO.#: OMO-SCT3080ALGC11-ROHM-SEMI

    		 MOSFET N-CH 650V 30A TO247
    SCT3080ALHRC11

    Mfr.#: SCT3080ALHRC11

    OMO.#: OMO-SCT3080ALHRC11-ROHM-SEMI

    		 AUTOMOTIVE GRADE N-CHANNEL SIC P
    SCT3080KLHRC11

    Mfr.#: SCT3080KLHRC11

    OMO.#: OMO-SCT3080KLHRC11-ROHM-SEMI

    		 AUTOMOTIVE GRADE N-CHANNEL SIC P
    Verfügbarkeit
    Aktie:
    900
    Auf Bestellung:
    2883
    Menge eingeben:
    Der aktuelle Preis von SCT3080ALHRC11 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    16,72 $
    16,72 $
    10
    15,37 $
    153,70 $
    25
    14,74 $
    368,50 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    More Newest Products
    Top