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FK14KM-10

FK14KM-10
Mfr. #:
FK14KM-10
Hersteller:
MIT
Beschreibung:
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220FN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FK14KM-10 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
MIT
Produktkategorie
IC-Chips
Tags
FK14K, FK14, FK1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220FN
***ponent Stockers USA
14 A 500 V 0.8 ohm N-CHANNEL Si POWER MOSFET
***ure Electronics
Single N-Channel 500 V 0.28 Ohms Flange Mount Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220AB
***nell
MOSFET, N, 500V, 17A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Di
***nsix Microsemi
Power Field-Effect Transistor, 16A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 18 A, 265 mΩ, TO-220F
*** Source Electronics
Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 500V 18A TO-220F
***enic
500V 18A 58W 265m´Î@10V9A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ment14 APAC
MOSFET, N-CH, 500V, 18A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Source Voltage Vds:500V; On Resistance
***r Electronics
Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:18A; Resistance, Rds On:0.265ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:72A; No. of Pins:3; Power Dissipation:38.5W; Voltage, Vds Max:500V; Voltage, Vgs th Max:5V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ical
Trans MOSFET N-CH 560V 16A 3-Pin(3+Tab) TO-220FP
***nell
MOSFET, N, 500V, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:560V; Current, Id Cont:16A; Resistance, Rds On:0.28ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:48.0A; Power, Pd:34.0W; Voltage, Vds:500V; Voltage, Vds Max:500V
***ment14 APAC
MOSFET, N-CH, 560V, 16A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:560V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:160W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:-; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 16 A, 380 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
*** Stop Electro
Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:500V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:38.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:16A; Package / Case:TO-220F; Power Dissipation Pd:38.5W; Pulse Current Idm:64A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***(Formerly Allied Electronics)
SiHP18N50C-E3 N-channel MOSFET Transistor; 17 A; 500 V; 3-Pin TO-220AB
***ure Electronics
E Series N-Channel 500 V 0.27 O 76 nC Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220AB
***enic
500V 18A 223W 270m´Î@10V10A 5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***nell
MOSFET,N CH,500V,18A,TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.225ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 223W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 18A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 30V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.26Ohm;ID 17A;TO-220AB;PD 220W;VGS +/-30V
***ure Electronics
Single N-Channel 500 V 0.29 Ohms Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH 500V 17A 3-Pin (3+Tab) TO-220AB
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 500V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N Channel Mosfet, 500V, 17A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:17A; On Resistance Rds(On):0.29Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
***ment14 APAC
MOSFET, N, 500V, 18A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:500V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Junction to Case Thermal Resistance A:0.63°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Power Dissipation Ptot Max:38W; Pulse Current Idm:72A; Termination Type:Through Hole; Voltage Vds:500V; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
Teil # Mfg. Beschreibung Aktie Preis
FK14KM-10
DISTI # C1S620200427847		Renesas Electronics CorporationTrans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220FN
RoHS: Not Compliant		10
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von FK14KM-10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
23,70 $
23,70 $
10
22,52 $
225,15 $
100
21,33 $
2 133,00 $
500
20,14 $
10 072,50 $
1000
18,96 $
18 960,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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