IXDN55N120D1

IXDN55N120D1
Mfr. #:
IXDN55N120D1
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 55 Amps 1200V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXDN55N120D1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXDN55N120D1 DatasheetIXDN55N120D1 Datasheet (P4)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
SOT-227B-4
Montageart:
SMD/SMT
Aufbau:
Single Dual Emitter
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
2.3 V
Maximale Gate-Emitter-Spannung:
20 V
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
IXDN55N120
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
100 A
Höhe:
9.6 mm
Länge:
38.23 mm
Breite:
25.42 mm
Marke:
IXYS
Kontinuierlicher Kollektorstrom:
100 A
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
10
Unterkategorie:
IGBTs
Gewichtseinheit:
1.058219 oz
Tags
IXDN55N120D, IXDN55, IXDN5, IXDN, IXD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***v
    S***v
    RU

    Thank you!

    2019-04-20
    D***n
    D***n
    TR

    Nice product for you

    2019-02-08
***ure Electronics
IXDN Series 1200 Vce 100 A 100 ns t(on) High Voltage IGBT - SOT-227B
***ark
Igbt, N-Ch, 1.2Kv, 100A, Sot-227B; Transistor Polarity:n Channel; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):2.3V; Power Dissipation Pd:450W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 100 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.8 / Emitter Leakage Current nA = 500 / Power Dissipation (Pd) W = 450 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = SOT-227B / Pins = 4 / Mounting Type = SMD
Teil # Mfg. Beschreibung Aktie Preis
IXDN55N120D1
DISTI # IXDN55N120D1-ND
IXYS CorporationIGBT 1200V 100A W/DIODE SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 250:$22.2575
  • 100:$24.2530
  • 30:$26.0950
  • 10:$28.3980
  • 1:$30.7000
IXDN55N120D1
DISTI # 02AC9794
IXYS CorporationIGBT, N-CH, 1.2KV, 100A, SOT-227B,Transistor Polarity:N Channel,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):2.3V,Power Dissipation Pd:450W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case , RoHS Compliant: Yes2
  • 1:$33.7700
  • 5:$32.0900
  • 10:$31.2400
  • 25:$28.7100
  • 50:$28.0200
  • 100:$26.6800
  • 250:$24.4900
IXDN55N120D1
DISTI # 747-IXDN55N120D1
IXYS CorporationIGBT Transistors 55 Amps 1200V
RoHS: Compliant
0
  • 1:$30.7000
  • 5:$29.1700
  • 10:$28.4000
  • 25:$26.1000
  • 50:$25.4700
  • 100:$24.2500
  • 200:$22.2600
IXDN55N120D1
DISTI # IXDN55N120D1
IXYS Corporation1200V 100A 450W SOT227B
RoHS: Compliant
28
  • 1:€24.7000
  • 5:€20.7000
  • 10:€18.7000
  • 25:€18.0000
IXDN55N120D1
DISTI # 2674741
IXYS CorporationIGBT, N-CH, 1.2KV, 100A, SOT-227B
RoHS: Compliant
2
  • 1:£24.3900
  • 5:£23.1600
  • 10:£20.7400
  • 50:£20.2300
  • 100:£17.6800
IXDN55N120D1
DISTI # 2674741
IXYS CorporationIGBT, N-CH, 1.2KV, 100A, SOT-227B
RoHS: Compliant
2
  • 1:$48.5800
  • 10:$44.9400
  • 30:$41.3000
  • 100:$38.3800
  • 250:$35.2200
Bild Teil # Beschreibung
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OMO.#: OMO-FG18C0G2A472JRT06

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Mfr.#: 865060640001

OMO.#: OMO-865060640001

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Mfr.#: AD633JRZ

OMO.#: OMO-AD633JRZ-ANALOG-DEVICES-INC-ADI

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OMO.#: OMO-L7805CV-STMICROELECTRONICS

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Mfr.#: EVB-KSZ9897-1

OMO.#: OMO-EVB-KSZ9897-1-MICROCHIP-TECHNOLOGY

KSZ9897 Switch Evaluation Board with LAN7801 & KSZ9031
FG24X7R1H105KRT06

Mfr.#: FG24X7R1H105KRT06

OMO.#: OMO-FG24X7R1H105KRT06-TDK

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Verfügbarkeit
Aktie:
370
Auf Bestellung:
2353
Menge eingeben:
Der aktuelle Preis von IXDN55N120D1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
30,70 $
30,70 $
5
29,17 $
145,85 $
10
28,39 $
283,90 $
25
26,09 $
652,25 $
50
25,47 $
1 273,50 $
100
24,25 $
2 425,00 $
200
22,25 $
4 450,00 $
500
21,19 $
10 595,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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