SI4931DY-T1-GE3

SI4931DY-T1-GE3
Mfr. #:
SI4931DY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -12V Vds 8V Vgs SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4931DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4931DY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
12 V
Id - Kontinuierlicher Drainstrom:
8.9 A
Rds On - Drain-Source-Widerstand:
18 mOhms
Vgs th - Gate-Source-Schwellenspannung:
400 mV
Vgs - Gate-Source-Spannung:
8 V
Qg - Gate-Ladung:
52 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
SI4
Transistortyp:
2 P-Channel
Breite:
3.9 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
26 S
Abfallzeit:
155 ns
Produktart:
MOSFET
Anstiegszeit:
46 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
230 ns
Typische Einschaltverzögerungszeit:
25 ns
Teil # Aliase:
SI4931DY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI4931DY-T, SI4931, SI493, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
DUAL P-CH MOSFET SO-8 12V 18MOHM @ 4.5V- LEAD(PB) AND HALOGEN FREE
***ical
Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
***ark
Dual P-Channel 12-V (D-S) Mosfet
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Teil # Mfg. Beschreibung Aktie Preis
SI4931DY-T1-GE3
DISTI # V72:2272_09216664
Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
RoHS: Compliant
600
  • 500:$0.6798
  • 250:$0.7742
  • 100:$0.7825
  • 25:$0.9702
  • 10:$0.9815
  • 1:$1.1463
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3CT-ND
Vishay SiliconixMOSFET 2P-CH 12V 6.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
26020In Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3DKR-ND
Vishay SiliconixMOSFET 2P-CH 12V 6.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
26020In Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3TR-ND
Vishay SiliconixMOSFET 2P-CH 12V 6.7A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
22500In Stock
  • 2500:$0.4500
SI4931DY-T1-GE3
DISTI # 31041114
Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
RoHS: Compliant
600
  • 500:$0.6798
  • 250:$0.7742
  • 100:$0.7825
  • 25:$0.9702
  • 13:$0.9815
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R (Alt: SI4931DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
  • 2500:$2.5240
  • 5000:$1.9415
  • 7500:$1.5453
  • 12500:$1.3055
  • 25000:$1.2019
  • 62500:$1.1649
  • 125000:$1.1301
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4931DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5999
  • 5000:$0.5819
  • 10000:$0.5579
  • 15000:$0.5429
  • 25000:$0.5279
SI4931DY-T1-GE3
DISTI # 15R5125
Vishay IntertechnologiesDUAL P-CHANNEL 12-V (D-S) MOSFET0
  • 1:$0.8410
  • 1000:$0.8070
  • 2000:$0.7340
  • 4000:$0.6600
  • 6000:$0.6360
  • 10000:$0.6210
SI4931DY-T1-GE3
DISTI # 781-SI4931DY-GE3
Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs SO-8
RoHS: Compliant
7375
  • 1:$1.4500
  • 10:$1.1900
  • 100:$0.9110
  • 500:$0.7840
  • 1000:$0.6190
  • 2500:$0.5780
SI4931DYT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 6.7A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
Europe - 560
    SI4931DY-T1-GE3Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs SO-8
    RoHS: Compliant
    Americas -
      SI4931DY-T1-GE3
      DISTI # C1S803601969446
      Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
      RoHS: Compliant
      600
      • 250:$0.7742
      • 100:$0.7825
      • 25:$0.9702
      • 10:$0.9815
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      Multilayer Ceramic Capacitors MLCC - SMD/SMT 270pF 100volts 5%
      APTF1616SURKCGKSYKC

      Mfr.#: APTF1616SURKCGKSYKC

      OMO.#: OMO-APTF1616SURKCGKSYKC

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      Mfr.#: GRM31CR61E476ME44K

      OMO.#: OMO-GRM31CR61E476ME44K-MURATA-ELECTRONICS

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      VJ1206A271JXBAT

      Mfr.#: VJ1206A271JXBAT

      OMO.#: OMO-VJ1206A271JXBAT-VISHAY

      Multilayer Ceramic Capacitors MLCC - SMD/SMT 270pF 100volts 5%
      APTF1616SURKCGKSYKC

      Mfr.#: APTF1616SURKCGKSYKC

      OMO.#: OMO-APTF1616SURKCGKSYKC-KINGBRIGHT

      Standard LEDs - SMD RGY 1616 SMD
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      Mfr.#: VC120626D580DP

      OMO.#: OMO-VC120626D580DP-AVX

      Varistors 26V 0.4J Energy
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1989
      Menge eingeben:
      Der aktuelle Preis von SI4931DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,44 $
      1,44 $
      10
      1,18 $
      11,80 $
      100
      0,91 $
      91,00 $
      500
      0,78 $
      391,50 $
      1000
      0,62 $
      618,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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