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IXFX48N60Q3

IXFX48N60Q3
Mfr. #:
IXFX48N60Q3
Hersteller:
Littelfuse
Beschreibung:
MOSFET Q3Class HiPerFET Pwr MOSFET 600V/48A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFX48N60Q3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFX48N60Q3 DatasheetIXFX48N60Q3 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFX48N60Q3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
48 A
Rds On - Drain-Source-Widerstand:
140 mOhms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
140 nC
Pd - Verlustleistung:
1 kW
Aufbau:
Single
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXFX48N60
Transistortyp:
1 N-Channel
Marke:
IXYS
Produktart:
MOSFET
Anstiegszeit:
300 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.056438 oz
Tags
IXFX48, IXFX4, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 140 mO 140 nC HiperFET Power Mosfet - PLUS-247
*** Electronics
MOSFET Q3Class HiPerFET Pwr MOSFET 600V/48A
***i-Key
MOSFET N-CH 600V 48A PLUS247-3
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-247
***roFlash
Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
SUPERFET2 104MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissi
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 37 A, 99 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 37A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 37 A, 104 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
***p One Stop Global
Trans MOSFET N-CH 600V 46A 3-Pin(3+Tab) TO-247 Tube
***el Electronic
IC SUPERVISOR 2 CHANNEL SOT23-5
***S
French Electronic Distributor since 1988
***r Electronics
Power Field-Effect Transistor, 29A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 600 V 110 mOhm Flange Mount FDmesh II Power Mosfet - TO-247-3
***ical
Trans MOSFET N-CH 600V 29A Automotive 3-Pin(3+Tab) TO-247 Tube
***ark
MOSFET, N-CH, AEC-Q101, 600V, 29A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N-CH, AUTO, 600V, 29A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.097ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: FDmesh II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***ark
Igbt Single Transistor, 80 A, 2.5 V, 260 W, 600 V, Max-247, 3
***ical
Trans IGBT Chip N-CH 600V 80A 260000mW 3-Pin(3+Tab) Max247 Tube
***nell
IGBT, 600V, 40A, TO-247 MAX; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: MAX-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic @ Vce Sat: 40A; Current Ic Continuous a Max: 80A; Current Temperature: 25°C; Fall Time tf: 45ns; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 260W; Power Dissipation Ptot Max: 260W; Pulsed Current Icm: 200A; Rise Time: 19ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFX48N60Q3
DISTI # IXFX48N60Q3-ND		IXYS CorporationMOSFET N-CH 600V 48A PLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		90In Stock
  • 120:$17.8024
  • 30:$19.3733
  • 1:$23.0400
IXFX48N60Q3
DISTI # 747-IXFX48N60Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 600V/48A
RoHS: Compliant		23
  • 1:$24.0800
  • 10:$21.9000
  • 25:$20.2500
  • 50:$18.6300
  • 100:$18.1800
  • 250:$16.6600
  • 500:$15.1200
Bild Teil # Beschreibung
UCC27321PE4

Mfr.#: UCC27321PE4

OMO.#: OMO-UCC27321PE4

 Gate Drivers Sgl 9-A H-S L-S MOSFET Driver
1N5337BG

Mfr.#: 1N5337BG

OMO.#: OMO-1N5337BG

 Zener Diodes 4.7V 5W
1N5353BRLG

Mfr.#: 1N5353BRLG

OMO.#: OMO-1N5353BRLG

 Zener Diodes 16V 5W
HGTG30N60B3D

Mfr.#: HGTG30N60B3D

OMO.#: OMO-HGTG30N60B3D

 IGBT Transistors 600V IGBT UFS N-Channel
2N7000

Mfr.#: 2N7000

OMO.#: OMO-2N7000

 MOSFET N-CHANNEL 60V 200mA
K104M15X7RF53H5

Mfr.#: K104M15X7RF53H5

OMO.#: OMO-K104M15X7RF53H5

 Multilayer Ceramic Capacitors MLCC - Leaded 0.1uF 50volts 20% X7R 5mm LS
1N5337BG

Mfr.#: 1N5337BG

OMO.#: OMO-1N5337BG-ON-SEMICONDUCTOR

 Zener Diodes 4.7V 5W
1N5353BRLG

Mfr.#: 1N5353BRLG

OMO.#: OMO-1N5353BRLG-ON-SEMICONDUCTOR

 DIODE ZENER 16V 5W AXIAL
HGTG30N60B3D

Mfr.#: HGTG30N60B3D

OMO.#: OMO-HGTG30N60B3D-ON-SEMICONDUCTOR

 IGBT 600V 60A 208W TO247
OL47G5E-R52

Mfr.#: OL47G5E-R52

OMO.#: OMO-OL47G5E-R52-OHMITE

 Carbon Film Resistors - Through Hole 4.7 Ohm 1/2W 5% 350 Volt
Verfügbarkeit
Aktie:
23
Auf Bestellung:
2006
Menge eingeben:
Der aktuelle Preis von IXFX48N60Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
24,08 $
24,08 $
10
21,90 $
219,00 $
25
20,25 $
506,25 $
50
18,63 $
931,50 $
100
18,18 $
1 818,00 $
250
16,66 $
4 165,00 $
500
15,12 $
7 560,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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