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BSZ123N08NS3GATMA1

BSZ123N08NS3GATMA1
Mfr. #:
BSZ123N08NS3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSZ123N08NS3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSZ123N08NS3GATMA1 DatasheetBSZ123N08NS3GATMA1 Datasheet (P4-P6)BSZ123N08NS3GATMA1 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TSDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
10.3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
25 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
66 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
3.3 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
17 S
Abfallzeit:
4 ns
Produktart:
MOSFET
Anstiegszeit:
18 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
19 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
BSZ123N08NS3 BSZ123N8NS3GXT G SP000443632
Gewichtseinheit:
0.004938 oz
Tags
BSZ123, BSZ12, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 80 V 12.3 mOhm 19 nC OptiMOS™ Power Mosfet - TSDSON-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.0103Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 40A, 80V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:80V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:66W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
Teil # Mfg. Beschreibung Aktie Preis
BSZ123N08NS3GATMA1
DISTI # V72:2272_06384484		Infineon Technologies AGTrans MOSFET N-CH 80V 10A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant		16730
  • 75000:$0.4638
  • 30000:$0.4910
  • 15000:$0.5181
  • 6000:$0.5453
  • 3000:$0.5725
  • 1000:$0.5996
  • 500:$0.6219
  • 250:$0.6915
  • 100:$0.7524
  • 50:$0.8008
  • 25:$0.9120
  • 10:$0.9373
  • 1:$1.0578
BSZ123N08NS3GATMA1
DISTI # BSZ123N08NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		49468In Stock
  • 1000:$0.6174
  • 500:$0.7821
  • 100:$1.0085
  • 10:$1.2760
  • 1:$1.4400
BSZ123N08NS3GATMA1
DISTI # BSZ123N08NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		49468In Stock
  • 1000:$0.6174
  • 500:$0.7821
  • 100:$1.0085
  • 10:$1.2760
  • 1:$1.4400
BSZ123N08NS3GATMA1
DISTI # BSZ123N08NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 40A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.5315
BSZ123N08NS3GATMA1
DISTI # 31079585		Infineon Technologies AGTrans MOSFET N-CH 80V 10A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant		16730
  • 15000:$0.5160
  • 6000:$0.5442
  • 3000:$0.5725
  • 1000:$0.6007
  • 500:$0.6201
  • 250:$0.6889
  • 100:$0.7502
  • 50:$0.7979
  • 25:$0.9080
  • 13:$0.9333
BSZ123N08NS3GATMA1
DISTI # BSZ123N08NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 10A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ123N08NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.4739
  • 10000:$0.4729
  • 20000:$0.4709
  • 30000:$0.4699
  • 50000:$0.4689
BSZ123N08NS3GATMA1.
DISTI # 27AC1116		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:66W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.4740
  • 10000:$0.4730
  • 20000:$0.4710
  • 30000:$0.4700
  • 50000:$0.4690
BSZ123N08NS3 G
DISTI # 726-BSZ123N08NS3G		Infineon Technologies AGMOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
RoHS: Compliant		44
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7820
  • 500:$0.6910
  • 1000:$0.5450
  • 5000:$0.4840
BSZ123N08NS3GATMA1
DISTI # 726-BSZ123N08NS3GATM		Infineon Technologies AGMOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7820
  • 500:$0.6910
  • 1000:$0.5450
  • 5000:$0.4840
BSZ123N08NS3GATMA1
DISTI # 1775505		Infineon Technologies AGMOSFET, N CH, 40A, 80V, PG-TSDSON-8
RoHS: Compliant		6
  • 5:£1.0900
  • 25:£0.9840
  • 100:£0.7550
BSZ123N08NS3GATMA1
DISTI # 1775505		Infineon Technologies AGMOSFET, N CH, 40A, 80V, PG-TSDSON-8
RoHS: Compliant		0
  • 1:$1.9100
  • 10:$1.6200
  • 100:$1.2400
  • 500:$1.1000
  • 1000:$0.8630
  • 5000:$0.7660
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OMO.#: OMO-RC0402FR-0710KL

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OMO.#: OMO-SD05T1G-ON-SEMICONDUCTOR

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Verfügbarkeit
Aktie:
13
Auf Bestellung:
1996
Menge eingeben:
Der aktuelle Preis von BSZ123N08NS3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,19 $
1,19 $
10
1,01 $
10,10 $
100
0,78 $
78,20 $
500
0,69 $
345,50 $
1000
0,54 $
545,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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