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SI8802DB-T2-E1

SI8802DB-T2-E1
Mfr. #:
SI8802DB-T2-E1
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI8802DB-T2-E1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI8802DB-T2-E1 DatasheetSI8802DB-T2-E1 Datasheet (P4-P6)SI8802DB-T2-E1 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SI8802DB-T2-E1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
MicroFoot-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
8 V
Id - Kontinuierlicher Drainstrom:
3.5 A
Rds On - Drain-Source-Widerstand:
54 mOhms
Vgs th - Gate-Source-Schwellenspannung:
350 mV
Vgs - Gate-Source-Spannung:
4.5 V
Qg - Gate-Ladung:
4.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
0.9 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
0.65 mm
Länge:
1.6 mm
Serie:
SI8
Transistortyp:
1 N-Channel
Breite:
1.6 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
13 S
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
22 ns
Typische Einschaltverzögerungszeit:
5 ns
Tags
SI8802DB-T, SI8802, SI880, Si88, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 8 V 54 mOhm 4.3 nC Surface Mount Power Mosfet - MICRO FOOT
***et
Trans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Si88xx 8V TrenchFET® Power MOSFETs
Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chipscale package, in addition to the first n- and p-channel devices to offer on-resistance (RDS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package which occupies up to 36 % less board space than the next smallest chipscale devices, yet offer comparable − and even lower − on resistance (RDS(on)). These Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs can be used for load switching in handheld devices including smart phones, tablets, portable media players, and mobile computing devices. The Si88xx 8V TrenchFET® Power MOSFETs' ultra-thin 0.357 mm profiles saves valuable board space in these applications − enabling smaller, slimmer mobile products.Learn More
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI8802DB-T2-E1
DISTI # V72:2272_09216581		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant		2974
  • 1000:$0.1511
  • 500:$0.2014
  • 250:$0.2257
  • 100:$0.2508
  • 25:$0.3335
  • 10:$0.3705
  • 1:$0.4750
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1CT-ND		Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		10259In Stock
  • 1000:$0.1695
  • 500:$0.2193
  • 100:$0.2991
  • 10:$0.3990
  • 1:$0.4700
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1DKR-ND		Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		10259In Stock
  • 1000:$0.1695
  • 500:$0.2193
  • 100:$0.2991
  • 10:$0.3990
  • 1:$0.4700
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1TR-ND		Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 3000:$0.1597
SI8802DB-T2-E1
DISTI # 30155844		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant		3000
  • 3000:$0.1683
SI8802DB-T2-E1
DISTI # 30883628		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant		2974
  • 1000:$0.1511
  • 500:$0.2014
  • 250:$0.2257
  • 100:$0.2508
  • 56:$0.3335
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8802DB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1279
  • 6000:$0.1239
  • 12000:$0.1189
  • 18000:$0.1149
  • 30000:$0.1119
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R (Alt: SI8802DB-T2-E1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI8802DB-T2-E1
    DISTI # 99W9639    		Vishay IntertechnologiesMOSFET, N-CH, 8V, 3.5A, MICRO FOOT-4, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV, RoHS Compliant: Yes0
    • 1:$0.1310
    • 3000:$0.1300
    • 6000:$0.1240
    • 12000:$0.1100
    SI8802DB-T2-E1
    DISTI # 04X9769    		Vishay IntertechnologiesMOSFET, N CHANNEL, 8V, 3.5A, MICRO FOOT-4,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV , RoHS Compliant: Yes0
    • 1:$0.2550
    • 10:$0.2470
    • 100:$0.1950
    • 250:$0.1850
    • 500:$0.1730
    • 1000:$0.1390
    SI8802DB-T2-E1
    DISTI # 781-SI8802DB-T2-E1    		Vishay IntertechnologiesMOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
    RoHS: Compliant    		14450
    • 1:$0.5800
    • 10:$0.3900
    • 100:$0.2640
    • 500:$0.2120
    • 1000:$0.1590
    • 3000:$0.1460
    • 6000:$0.1370
    • 9000:$0.1280
    SI8802DBT2E1Vishay Intertechnologies 
    RoHS: Compliant    		Europe - 3000
      SI8802DB-T2-E1
      DISTI # C1S803601968173      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2974
      • 250:$0.2257
      • 100:$0.2508
      • 25:$0.3335
      • 10:$0.3705
      SI8802DB-T2-E1Vishay IntertechnologiesMOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
      RoHS: Compliant      		Americas -
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1989
        Menge eingeben:
        Der aktuelle Preis von SI8802DB-T2-E1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,57 $
        0,57 $
        10
        0,39 $
        3,90 $
        100
        0,26 $
        26,40 $
        500
        0,21 $
        106,00 $
        1000
        0,16 $
        159,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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