STF24NM65N

STF24NM65N
Mfr. #:
STF24NM65N
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 650V 19A TO-220FP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STF24NM65N Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STF24NM65N Mehr Informationen STF24NM65N Product Details
Produkteigenschaft
Attributwert
Hersteller
ST
Produktkategorie
FETs - Einzeln
Tags
STF24NM65, STF24NM, STF24N, STF24, STF2, STF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247 second generation MDmesh™ Power MOSFET
***et
Trans MOSFET N-CH 650V 19A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 19A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET N CH 650V 19A TO-220FP; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:650V; Cont Current Id:9.5A; On State Resistance:160mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:TO-220FP; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C
***icroelectronics
N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET TO-220FP
***ical
Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 22A I(D), 650V, 0.139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Mosfet Transistor, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package
*** Source Electronics
MOSFET N-CH 600V 21A TO-220FP / Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP Tube
***ponent Stockers USA
21 A 600 V 0.16 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 21A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 40W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 710 V 179 mOhm Flange Mount MDmesh™ V Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH Si 650V 17A 3-Pin(3+Tab) TO-220FP Tube
*** Electronics
STMICROELECTRONICS STF21N65M5 Power MOSFET, N Channel, 17 A, 650 V, 0.15 ohm, 10 V, 4 V
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 650V, 17A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***ure Electronics
E-Series N-Ch 650 V 0.145 Ohm Flange Mount High Voltage Power Mosfet - TO-220AB
***et
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB
***el Electronic
MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS
***p One Stop Global
Trans MOSFET N-CH 650V 22.4A 3-Pin(3+Tab) TO-220 Full-Pack Tube
***ure Electronics
IPA65R150CFD Series 650 V 22.4 A CoolMOS™ CFD2 Power Transistor - TO-220FP
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.0pF 50volts C0G +/-0.5pF
***ineon SCT
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Mosfet, N-Ch, 650V, 22.4A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650V, 20.6A, 190mΩ, TO-220
***ark
SuperFET2 650V, 190 mOhm, FRFET - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
***ical
Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-220 Rail
*** Stop Electro
Power Field-Effect Transistor, 20.6A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Teil # Mfg. Beschreibung Aktie Preis
STF24NM65N
DISTI # 497-11394-5-ND
STMicroelectronicsMOSFET N-CH 650V 19A TO-220FP
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    STF24NM65N
    DISTI # 511-STF24NM65N
    STMicroelectronicsMOSFET N-Channel 650V 0.16 Ohms 19A
    RoHS: Compliant
    0
      Bild Teil # Beschreibung
      STF24N60M6

      Mfr.#: STF24N60M6

      OMO.#: OMO-STF24N60M6

      MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a TO-220FP package
      STF2454A

      Mfr.#: STF2454A

      OMO.#: OMO-STF2454A-1190

      Neu und Original
      STF2458

      Mfr.#: STF2458

      OMO.#: OMO-STF2458-1190

      Neu und Original
      STF2458A

      Mfr.#: STF2458A

      OMO.#: OMO-STF2458A-1190

      Neu und Original
      STF2460K

      Mfr.#: STF2460K

      OMO.#: OMO-STF2460K-1190

      Neu und Original
      STF24N60DM2

      Mfr.#: STF24N60DM2

      OMO.#: OMO-STF24N60DM2-STMICROELECTRONICS

      MOSFET N-CH 600V 18A TO220FP
      STF24N60M2

      Mfr.#: STF24N60M2

      OMO.#: OMO-STF24N60M2-STMICROELECTRONICS

      MOSFET N-CH 600V 18A TO220FP
      STF24NM60N,24NM60N,24NM6

      Mfr.#: STF24NM60N,24NM60N,24NM6

      OMO.#: OMO-STF24NM60N-24NM60N-24NM6-1190

      Neu und Original
      STF24NM60N/IXFP22N65X2

      Mfr.#: STF24NM60N/IXFP22N65X2

      OMO.#: OMO-STF24NM60N-IXFP22N65X2-1190

      Neu und Original
      STF24NM65N,24NM65N,F24NM

      Mfr.#: STF24NM65N,24NM65N,F24NM

      OMO.#: OMO-STF24NM65N-24NM65N-F24NM-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von STF24NM65N dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,00 $
      0,00 $
      10
      0,00 $
      0,00 $
      100
      0,00 $
      0,00 $
      500
      0,00 $
      0,00 $
      1000
      0,00 $
      0,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Neueste Produkte
      • STM32 LoRaWAN™ Discovery Board
        STMicroelectronics’ B-L072Z-LRWAN1 STM32 LoRa™ Discovery board is a development tool to learn and develop solutions based on LoRa and/or FSK/OOK technologies.
      • FDA803D Automotive Power Amplifiers
        STMicroelectronics’ FDA803D is an innovative 1 channel class D audio amplifier, suitable for a wide range of automotive applications.
      • STEVAL-SPIN3201 BLDC Controller Board
        STMicroelectronics' STEVAL-SPIN3201 board is a three-phase brushless DC motor driver board based on the STSPIN32F0 and STD140N6F7 MOSFETs.
      • S2-LPQTR RF Transceiver
        STMicroelectronics' S2-LPQTR RF transceiver is designed for prolonged battery lifetime in smart home, smart city, and smart industry applications.
      • SensorTile
        STMicroelectronics' SensorTile simplifies prototyping, evaluation, and development of innovative solutions.
      Top