DMHC10H170SFJ-13

Mfr. #:: DMHC10H170SFJ-13
Hersteller:: Diodes Incorporated
Beschreibung:: MOSFET 100V Comp Enh FET 20Vgs w/ H-Bridge
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: DMHC10H170SFJ-13 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Eingebaute Dioden

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: V-DFN5045-12

Anzahl der Kanäle:: 4 Channel

Polarität des Transistors:: N-Kanal, P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 100 V

Id - Kontinuierlicher Drainstrom:: 2.9 A, 2.3 A

Rds On - Drain-Source-Widerstand:: 111 mOhms, 191 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V, 3 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 9.7 nC, 17.5 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 2.1 W

Aufbau:: Quad

Kanalmodus:: Erweiterung

Verpackung:: Spule

Serie:: DMHC10H

Transistortyp:: 2 N-Channel, 2 P-Channel

Marke:: Eingebaute Dioden

Vorwärtstranskonduktanz - Min:: -

Abfallzeit:: 12.8 ns, 34.4 ns

Produktart:: MOSFET

Anstiegszeit:: 11.1 ns, 14.9 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 42.6 ns, 57.4 ns

Typische Einschaltverzögerungszeit:: 10.5 ns, 9.1 ns

Tags: DMHC, DMH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMHC10H170SFJ-13 Beschreibung

***ure Electronics: Trans MOSFET N/P-CH 100V 2.9A/2.3A 12-Pin DFN T/R - Tape and Reel

***des Inc SCT: 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE, 2.1 W, RoHS

***ark: Mosfet, N/p-Ch, 100V, 2.9A Rohs Compliant: Yes

***ronik: Mosfet H-Bridge 100V Complement

***i-Key: MOSFET 2N/2P-CH 100V DFN5045-12

***ark: Mosfet, N-Ch, 100V, 2.9A, U-Dfn2020 Rohs Compliant: Yes

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS

***ical: Trans MOSFET N-CH 100V 2.9A 6-Pin UDFN EP T/R

***et: MOSFET BVDSS: 61V~100V U-DFN2020-6 T&R 3K

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ark: Mosfet, N-Ch, 100V, 2.6A, Tsot-26 Rohs Compliant: Yes

***des Inc SCT: 100V N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS

***et: MOSFET BVDSS: 61V~100V TSOT26 T&R 3K

***et: Trans MOSFET N-CH 100V 2.6A 6-Pin TSOT-26 T/R

***ure Electronics: N-Channel 100 V 2.6 A 160 mOhm 1.2 W SMT Enhancement Mode Mosfet - TSOT-26

*** Source Electronics: Trans MOSFET N-CH 100V 2.6A 6-Pin TSOT-23 T/R / MOSFET N-CH 100V 2.6A SSOT-6

***emi: N-Channel PowerTrench® MOSFET 100V 2.6A, 125mΩ

***ure Electronics: N-Channel 100 V 125 mOhm Surface Mount PowerTrench Mosfet - SSOT-6

***ment14 APAC: MOSFET, N CH, 100V, 2.6A, SSOT6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.6A; Package / Case:SSOT; Power Dissipation Pd:1.6W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:2.3V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***(Formerly Allied Electronics): SI1480DH-T1-GE3 N-channel MOSFET Transistor; 2.6 A; 100 V; 6-Pin SOT-363

***ment14 APAC: MOSFET, N-CH, 100V, 2.6A, 150DEG C, 2.8W; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V;

***nell: MOSFET, N-CH, 100V, 2.6A, SOT-363; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.161ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:MSL 1 - Unlimited

***ical: Trans MOSFET N-CH 75V 2.5A Automotive 6-Pin TSOP T/R

***ineon SCT: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002), PG-TSOP6-6, RoHS

***el Electronic: CAP CER 4.3PF 25V C0G/NP0 01005

***i-Key: 2.5A, 75V, 0.15OHM, N-CHANNEL,

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
DMHC10H170SFJ-13 DISTI # DMHC10H170SFJ-13DICT-ND	Diodes Incorporated	MOSFET 2N/2P-CH 100V DFN5045-12 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2464In Stock	1000:$0.6033 500:$0.7642 100:$0.9854 10:$1.2470 1:$1.4100
DMHC10H170SFJ-13 DISTI # DMHC10H170SFJ-13DIDKR-ND	Diodes Incorporated	MOSFET 2N/2P-CH 100V DFN5045-12 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2464In Stock	1000:$0.6033 500:$0.7642 100:$0.9854 10:$1.2470 1:$1.4100
DMHC10H170SFJ-13 DISTI # DMHC10H170SFJ-13DITR-ND	Diodes Incorporated	MOSFET 2N/2P-CH 100V DFN5045-12 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.5467
DMHC10H170SFJ-13 DISTI # DMHC10H170SFJ-13	Diodes Incorporated	Trans MOSFET N/P-CH 100V 2.9A/2.3A 12-Pin DFN T/R (Alt: DMHC10H170SFJ-13) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.5789 6000:€0.5509 12000:€0.5419 18000:€0.5329 30000:€0.5099
DMHC10H170SFJ-13 DISTI # DMHC10H170SFJ-13	Diodes Incorporated	Trans MOSFET N/P-CH 100V 2.9A/2.3A 12-Pin DFN T/R - Tape and Reel (Alt: DMHC10H170SFJ-13) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5349 6000:$0.5089 12000:$0.4849 18000:$0.4629 30000:$0.4529
DMHC10H170SFJ-13 DISTI # 621-DMHC10H170SFJ-13	Diodes Incorporated	MOSFET 100V Comp Enh FET 20Vgs w/ H-Bridge RoHS: Compliant	0	1:$1.1700 10:$0.9940 100:$0.7640 500:$0.6750 1000:$0.5330 3000:$0.4730 9000:$0.4550

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1988
Menge eingeben:

Der aktuelle Preis von DMHC10H170SFJ-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,16 $~~; ~~1,16 $~~

10: ~~0,99 $~~; ~~9,94 $~~

100: ~~0,76 $~~; ~~76,40 $~~

500: ~~0,68 $~~; ~~337,50 $~~

1000: ~~0,53 $~~; ~~533,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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DMHC10H170SFJ-13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes