OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IGW40N65H5FKSA1

IGW40N65H5FKSA1
Mfr. #:
IGW40N65H5FKSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors IGBT PRODUCTS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IGW40N65H5FKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IGW40N65H5FKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
IGBTs - Single
Serie
TrenchStopR
Verpackung
Rohr
Teil-Aliasnamen
IGW40N65H5 SP001001742
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
PG-TO247-3
Aufbau
Single
Leistung max
255W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
74A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
-
Strom-Kollektor-gepulster-Icm
120A
Vce-on-Max-Vge-Ic
2.1V @ 15V, 40A
Schaltenergie
390μJ (on), 120μJ (off)
Gate-Gebühr
95nC
Td-ein-aus-25°C
22ns/165ns
Testbedingung
400V, 20A, 15 Ohm, 15V
Pd-Verlustleistung
255 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 40 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
1.6 V
Kontinuierlicher Kollektorstrom-bei-25-C
74 A
Gate-Emitter-Leckstrom
100 nA
Maximale Gate-Emitter-Spannung
20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
46 A
Tags
IGW40N65H, IGW40N65, IGW40N6, IGW40N, IGW40, IGW4, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 74A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube
***i-Key
IGBT 650V 74A 255W PG-TO247-3
***ronik
IGBT 650V 40A 1.65V TO247-3
***ark
IGBT, 650V, 40A, TO247-3
***ukat
650V 74A 255W TO247
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 40A, TO247-3; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:255W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Transistor Type:IGBT
***nell
IGBT, 650V, 40A, TO247-3; Corrente di Collettore CC:40A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:255W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Teil # Mfg. Beschreibung Aktie Preis
IGW40N65H5FKSA1
DISTI # V99:2348_06377723		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		235
  • 500:$2.1629
  • 250:$2.4009
  • 100:$2.5110
  • 10:$2.8300
  • 1:$3.5464
IGW40N65H5FKSA1
DISTI # IGW40N65H5FKSA1-ND		Infineon Technologies AGIGBT 650V 74A 255W PG-TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		85In Stock
  • 2640:$1.9424
  • 720:$2.4182
  • 240:$2.8407
  • 25:$3.2776
  • 10:$3.4670
  • 1:$3.8600
IGW40N65H5FKSA1
DISTI # 26197292		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		235
  • 500:$2.1629
  • 250:$2.4009
  • 100:$2.5110
  • 10:$2.8300
  • 4:$3.2240
IGW40N65H5FKSA1
DISTI # IGW40N65H5FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube - Bulk (Alt: IGW40N65H5FKSA1)
Min Qty: 209
Container: Bulk		Americas - 0
  • 1045:$1.4900
  • 2090:$1.4900
  • 418:$1.5900
  • 627:$1.5900
  • 209:$1.6900
IGW40N65H5FKSA1
DISTI # IGW40N65H5FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW40N65H5FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$1.6900
  • 2400:$1.6900
  • 960:$1.7900
  • 240:$1.8900
  • 480:$1.8900
IGW40N65H5FKSA1
DISTI # SP001001742		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube (Alt: SP001001742)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.4400
  • 500:€1.7900
  • 250:€1.9900
  • 100:€2.1000
  • 10:€2.4200
  • 1:€2.8500
IGW40N65H5
DISTI # 726-IGW40N65H5-ES		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
RoHS: Compliant		166
  • 1:$3.6700
  • 10:$3.1200
  • 100:$2.7000
  • 250:$2.5600
  • 500:$2.3000
IGW40N65H5FKSA1
DISTI # 726-IGW40N65H5FKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		242
  • 1:$3.6700
  • 10:$3.1200
  • 100:$2.7000
  • 250:$2.5600
  • 500:$2.3000
IGW40N65H5FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant		4560
  • 1000:$1.5800
  • 500:$1.6600
  • 100:$1.7300
  • 25:$1.8100
  • 1:$1.9400
IGW40N65H5FKSA1
DISTI # IGW40N65H5FKSA1		Infineon Technologies AGTransistor: IGBT,650V,74A,250W,TO247-3,Series: H542
  • 1:$3.4700
  • 3:$3.0000
  • 10:$2.4100
  • 30:$2.1700
IGW40N65H5FKSA1
DISTI # 2363278		Infineon Technologies AGIGBT, 650V, 40A, TO247-3
RoHS: Compliant		0
  • 500:£1.8000
  • 250:£2.0000
  • 100:£2.1000
  • 10:£2.4300
  • 1:£3.2000
IGW40N65H5FKSA1
DISTI # IGW40N65H5		Infineon Technologies AG650V 74A 255W TO247
RoHS: Compliant		144
  • 1:€5.5000
  • 10:€2.5000
  • 50:€1.5000
  • 100:€1.4500
Bild Teil # Beschreibung
IGW40N65F5FKSA1

Mfr.#: IGW40N65F5FKSA1

OMO.#: OMO-IGW40N65F5FKSA1

 IGBT Transistors IGBT PRODUCTS
IGW40N65F5

Mfr.#: IGW40N65F5

OMO.#: OMO-IGW40N65F5

 IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
IGW40N60A

Mfr.#: IGW40N60A

OMO.#: OMO-IGW40N60A-1190

 Neu und Original
IGW40N60H3 G40H603

Mfr.#: IGW40N60H3 G40H603

OMO.#: OMO-IGW40N60H3-G40H603-1190

 Neu und Original
IGW40N60H3FKSA1

Mfr.#: IGW40N60H3FKSA1

OMO.#: OMO-IGW40N60H3FKSA1-INFINEON-TECHNOLOGIES

 IGBT 600V 80A 306W TO247-3
IGW40N60N

Mfr.#: IGW40N60N

OMO.#: OMO-IGW40N60N-1190

 Neu und Original
IGW40N65F5AXKSA1

Mfr.#: IGW40N65F5AXKSA1

OMO.#: OMO-IGW40N65F5AXKSA1-INFINEON-TECHNOLOGIES

 IGBT 650V TO247-3
IGW40N65H5AXKSA1

Mfr.#: IGW40N65H5AXKSA1

OMO.#: OMO-IGW40N65H5AXKSA1-INFINEON-TECHNOLOGIES

 IGBT 650V TO247-3
IGW40N60H3

Mfr.#: IGW40N60H3

OMO.#: OMO-IGW40N60H3-126

 IGBT Transistors 600V 40A 306W
IGW40N65F5FKSA1

Mfr.#: IGW40N65F5FKSA1

OMO.#: OMO-IGW40N65F5FKSA1-INFINEON-TECHNOLOGIES

 IGBT Transistors IGBT PRODUCTS
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von IGW40N65H5FKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,24 $
2,24 $
10
2,12 $
21,23 $
100
2,01 $
201,15 $
500
1,90 $
949,90 $
1000
1,79 $
1 788,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top