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FGA50S110P

FGA50S110P
Mfr. #:
FGA50S110P
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 1100 V, 50 A Shorted-anode IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGA50S110P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGA50S110P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3PN
Montageart:
Durchgangsloch
Kollektor- Emitterspannung VCEO Max:
1100 V
Kollektor-Emitter-Sättigungsspannung:
2.7 V
Maximale Gate-Emitter-Spannung:
25 V
Kontinuierlicher Kollektorstrom bei 25 C:
50 A
Pd - Verlustleistung:
300 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
FGA50S110P
Verpackung:
Rohr
Marke:
ON Semiconductor / Fairchild
Gate-Emitter-Leckstrom:
500 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Gewichtseinheit:
0.225789 oz
Tags
FGA5, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1.1KV 50A 3-Pin(3+Tab) TO-3PN Tube
***emi
IGBT, 1100V, 50A, Shorted-anode
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1100V V(BR)CES, N-Channel
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***i-Key Marketplace
INSULATED GATE BIPOLAR TRANSISTO
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. This device is tailored to induction cooker and microwave oven.
***et Europe
Trans IGBT Chip N-CH 1.25KV 50A 3-Pin(3+Tab) TO-3P(N) Rail
***emi
1250V, 25A, Shorted-anode IGBT
***ark
RAIL / 1250V 25A FS SA Trench IGBT
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 1200 V 35 A Flange Mount IGBT - TO-220AB
***r Electronics
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
HGTP10N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
***ical
Trans IGBT Chip N=-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail
***eco
Transistor IGBT Chip N Channel 1.2k Volt 50 Amp 3-Pin 3+ Tab TO-3PN Rail
***ure Electronics
FGA25N120ANTD Series 1200 V 50 A Flange Mont NPT Trench IGBT - TO-3PN
***el Electronic
In a Pack of 2, ON Semiconductor FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3P
***ment14 APAC
IGBT, NPT, TO-3PN; DC Collector Current:50A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:312mW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:50A; Package / Case:TO-3PN; Power Dissipation Max:312W; Power Dissipation Pd:312mW; Pulsed Current Icm:90A; Rise Time:60ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***th Star Micro
Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
***ical
Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247
***Yang
PWR IGBT 35A 1200V NPT N-CHANNEL TO-247 - Bulk
***rchild Semiconductor
The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
***p One Stop Global
Trans IGBT Chip N-CH 1200V 41A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH40U Series 1200 V 21 A N-Channel UltraFast Speed IGBT - TO-247AC
***ineon SCT
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.43 V Current release time: 180 ns Power dissipation: 160 W
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40U; Fall Time Max:190ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube
***Parts
IGBTs - Single, Transistors N-Channel, TO-247-3 60A 1200V 220W Through Hole
***ure Electronics
N-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247
***nell
IGBT, N 1200V 30A TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.75V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins
Shorted Anode™ Trench IGBTs
ON Semiconductor Shorted Anode Trench IGBTs™ deliver superior conduction, switching performances, and easy parallel operation with exceptional avalanche capability. Fairchild Shorted Anode Trench IGBTs feature Field Stop Trench and Shorted Anode technology and are designed for induction heating, microwave oven applications, and soft switching applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FGA50S110P
DISTI # 32452696		ON SemiconductorFGA50S110P6300
  • 5000:$1.3860
  • 2500:$1.4454
  • 1000:$1.5246
  • 500:$1.8018
  • 450:$2.0097
FGA50S110P
DISTI # FGA50S110P-ND		ON SemiconductorIGBT 1100V 50A 300W TO3PN
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$2.1368
FGA50S110P
DISTI # FGA50S110P		ON SemiconductorTrans IGBT Chip N-CH 1100V 50A 3-Pin TO-3PN T/R - Bulk (Alt: FGA50S110P)
Min Qty: 205
Container: Bulk		Americas - 0
  • 205:$1.4900
  • 410:$1.4900
  • 615:$1.4900
  • 1025:$1.4900
  • 2050:$1.4900
FGA50S110P
DISTI # FGA50S110P		ON SemiconductorTrans IGBT Chip N-CH 1100V 50A 3-Pin TO-3PN T/R - Rail/Tube (Alt: FGA50S110P)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 2700:$1.2900
  • 4500:$1.2900
  • 450:$1.3900
  • 900:$1.3900
  • 1800:$1.3900
FGA50S110P
DISTI # 96W6435		ON SemiconductorSA2TIGBT TO3PN 50A 1100V / TUBE0
  • 500:$1.4300
  • 250:$1.4800
  • 100:$1.7600
  • 50:$2.0400
  • 25:$2.1700
  • 10:$2.4800
  • 1:$2.8600
FGA50S110P
DISTI # 512-FGA50S110P		ON SemiconductorIGBT Transistors 1100 V, 50 A Shorted-anode IGBT
RoHS: Compliant		20
  • 1:$2.9100
  • 10:$2.4700
  • 100:$2.1400
  • 250:$2.0300
  • 500:$1.8200
  • 1000:$1.5400
  • 2500:$1.4600
  • 5000:$1.4000
FGA50S110PFairchild Semiconductor Corporation 
RoHS: Not Compliant		307
  • 1000:$1.6100
  • 500:$1.6900
  • 100:$1.7600
  • 25:$1.8400
  • 1:$1.9800
FGA50S110P
DISTI # 8648786P		ON SemiconductorIGBT 1100V 50A SHORTED-ANODE TO3PN, TU94
  • 10:£2.1000
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Verfügbarkeit
Aktie:
460
Auf Bestellung:
2443
Menge eingeben:
Der aktuelle Preis von FGA50S110P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,91 $
2,91 $
10
2,47 $
24,70 $
100
2,14 $
214,00 $
250
2,03 $
507,50 $
500
1,82 $
910,00 $
1000
1,54 $
1 540,00 $
2500
1,46 $
3 650,00 $
5000
1,40 $
7 000,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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