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NSS40300DDR2G

NSS40300DDR2G
Mfr. #:
NSS40300DDR2G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NSS40300DDR2G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSS40300DDR2G DatasheetNSS40300DDR2G Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
SOIC-Narrow-8
Polarität des Transistors:
PNP
Aufbau:
Dual
Kollektor- Emitterspannung VCEO Max:
- 40 V
Kollektor- Basisspannung VCBO:
- 40 V
Emitter- Basisspannung VEBO:
- 7 V
Kollektor-Emitter-Sättigungsspannung:
0.135 V
Maximaler DC-Kollektorstrom:
- 6 A
Bandbreitenprodukt fT gewinnen:
100 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
NSS40300DD
DC-Stromverstärkung hFE Max:
250 at 10 mA, 2 V
Höhe:
1.5 mm
Länge:
5 mm
Verpackung:
Spule
Breite:
4 mm
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
- 3 A
DC-Kollektor/Basisverstärkung hfe Min:
250
Pd - Verlustleistung:
783 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
2500
Unterkategorie:
Transistoren
Gewichtseinheit:
0.005044 oz
Tags
NSS40300, NSS403, NSS40, NSS4, NSS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R
***th Star Micro
ON Semiconductors e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
Teil # Mfg. Beschreibung Aktie Preis
NSS40300DDR2G
DISTI # NSS40300DDR2GOSCT-ND		ON SemiconductorTRANS 2PNP 40V 3A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2445In Stock
  • 1000:$0.3288
  • 500:$0.4110
  • 100:$0.5199
  • 10:$0.6780
  • 1:$0.7700
NSS40300DDR2G
DISTI # NSS40300DDR2GOSDKR-ND		ON SemiconductorTRANS 2PNP 40V 3A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2445In Stock
  • 1000:$0.3288
  • 500:$0.4110
  • 100:$0.5199
  • 10:$0.6780
  • 1:$0.7700
NSS40300DDR2G
DISTI # NSS40300DDR2GOSTR-ND		ON SemiconductorTRANS 2PNP 40V 3A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 12500:$0.2660
  • 5000:$0.2693
  • 2500:$0.2893
NSS40300DDR2G
DISTI # NSS40300DDR2G		ON SemiconductorTrans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R (Alt: NSS40300DDR2G)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.2399
  • 15000:€0.2589
  • 10000:€0.2799
  • 5000:€0.3059
  • 2500:€0.3739
NSS40300DDR2G
DISTI # NSS40300DDR2G		ON SemiconductorTrans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Bulk (Alt: NSS40300DDR2G)
RoHS: Compliant
Min Qty: 1191
Container: Bulk		Americas - 0
  • 11910:$0.2589
  • 5955:$0.2649
  • 3573:$0.2689
  • 2382:$0.2719
  • 1191:$0.2739
NSS40300DDR2G
DISTI # NSS40300DDR2G		ON SemiconductorTrans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Tape and Reel (Alt: NSS40300DDR2G)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2339
  • 15000:$0.2399
  • 10000:$0.2429
  • 5000:$0.2459
  • 2500:$0.2479
NSS40300DDR2G
DISTI # 863-NSS40300DDR2G		ON SemiconductorBipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP
RoHS: Compliant		5043
  • 1:$0.7100
  • 10:$0.5890
  • 100:$0.3800
  • 1000:$0.3040
  • 2500:$0.2570
  • 10000:$0.2480
  • 25000:$0.2380
NSS40300DDR2GON SemiconductorSmall Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon
RoHS: Compliant		54821
  • 1000:$0.2800
  • 500:$0.2900
  • 100:$0.3000
  • 25:$0.3200
  • 1:$0.3400
NSS40300DDR2GON Semiconductor 449
    NSS40300DDR2GON SemiconductorDual 40 V, 6.0 A, Low VCE(sat) PNP Transistor398
    • 1:$0.4400
    • 100:$0.3400
    • 500:$0.3100
    • 1000:$0.2900
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von NSS40300DDR2G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,71 $
    0,71 $
    10
    0,59 $
    5,89 $
    100
    0,38 $
    38,00 $
    1000
    0,30 $
    304,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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