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SIZ998DT-T1-GE3

SIZ998DT-T1-GE3
Mfr. #:
SIZ998DT-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIZ998DT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ998DT-T1-GE3 DatasheetSIZ998DT-T1-GE3 Datasheet (P4-P6)SIZ998DT-T1-GE3 Datasheet (P7-P9)SIZ998DT-T1-GE3 Datasheet (P10-P12)SIZ998DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Mehr Informationen:
SIZ998DT-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAIR-6x5-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
20 A, 60 A
Rds On - Drain-Source-Widerstand:
4.7 mOhms, 2.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.1 V
Vgs - Gate-Source-Spannung:
- 16 V, 20 V
Qg - Gate-Ladung:
18 nC, 44.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
20.2 W, 32.9 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
6 mm
Serie:
GRÖSSE
Transistortyp:
2 N-Channel
Breite:
5 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
80 S, 165 S
Abfallzeit:
10 ns, 10 ns
Produktart:
MOSFET
Anstiegszeit:
65 ns, 65 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
10 ns, 17 ns
Typische Einschaltverzögerungszeit:
15 ns, 25 ns
Tags
SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 18.8A/32.8A 8-Pin PowerPAIR T/R
***ark
Dual N-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes
***ment14 APAC
MOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.6853
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.7563
  • 500:$0.9580
  • 100:$1.2353
  • 10:$1.5630
  • 1:$1.7600
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.7563
  • 500:$0.9580
  • 100:$1.2353
  • 10:$1.5630
  • 1:$1.7600
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 18.8A/32.8A 8-Pin PowerPAIR T/R (Alt: SIZ998DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 50
  • 3000:€1.2409
  • 6000:€0.8899
  • 12000:€0.7219
  • 18000:€0.6379
  • 30000:€0.6109
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 18.8A/32.8A 8-Pin PowerPAIR T/R (Alt: SIZ998DT-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
    SIZ998DT-T1-GE3
    DISTI # SIZ998DT-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 18.8A/32.8A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ998DT-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.6469
    • 6000:$0.6279
    • 12000:$0.6019
    • 18000:$0.5859
    • 30000:$0.5699
    SIZ998DT-T1-GE3
    DISTI # 43AC4021    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,, RoHS Compliant: Yes0
    • 1:$1.5900
    • 10:$1.3100
    • 25:$1.2100
    • 50:$1.1100
    • 100:$1.0100
    • 250:$0.9400
    • 500:$0.8700
    SIZ998DT-T1-GE3
    DISTI # 78-SIZ998DT-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
    RoHS: Compliant    		0
    • 1:$1.5600
    • 10:$1.2900
    • 100:$0.9840
    • 500:$0.8460
    • 1000:$0.6680
    • 3000:$0.6230
    SIZ998DT-T1-GE3
    DISTI # 2802799    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
    RoHS: Compliant    		0
    • 5:£1.3900
    • 25:£1.2600
    • 100:£0.9750
    SIZ998DT-T1-GE3
    DISTI # 2802799    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
    RoHS: Compliant    		0
    • 5:$2.6400
    • 25:$2.1800
    • 100:$1.7100
    • 250:$1.4100
    • 500:$1.1900
    • 1000:$1.1300
    • 5000:$1.0900
    SIZ998DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
    RoHS: Compliant    		Americas -
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1986
      Menge eingeben:
      Der aktuelle Preis von SIZ998DT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,55 $
      1,55 $
      10
      1,28 $
      12,80 $
      100
      0,98 $
      98,40 $
      500
      0,85 $
      423,00 $
      1000
      0,67 $
      668,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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