SMMUN2116LT1G

Mfr. #:: SMMUN2116LT1G
Hersteller:: ON Semiconductor
Beschreibung:: Bipolar Transistors - Pre-Biased SS BR XSTR SPCL TR
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SMMUN2116LT1G Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SMMUN2116LT1G Datasheet SMMUN2116LT1G Datasheet (P4-P6)SMMUN2116LT1G Datasheet (P7-P9)SMMUN2116LT1G Datasheet (P10-P11)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: ON Semiconductor

Produktkategorie:: Bipolartransistoren – vorgespannt

RoHS:: Y

Serie:: MMUN2116L

Verpackung:: Spule

Marke:: ON Semiconductor

Produktart:: BJTs – Bipolartransistoren – Vorgespannt

Qualifikation:: AEC-Q101

Werkspackungsmenge:: 3000

Unterkategorie:: Transistoren

Tags: SMMUN211, SMMUN21, SMMUN2, SMMU, SMM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SMMUN2116LT1G Beschreibung

***ical: Trans Digital BJT PNP 50V 100mA 400mW Automotive 3-Pin SOT-23 T/R

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

***emi: PNP Bipolar Digital Transistor (BRT)

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

***p One Stop Global: Trans Digital BJT PNP 50V 100mA 400mW Automotive 3-Pin SOT-23 T/R

***(Formerly Allied Electronics): ON Semi MMUN2116LT1G PNP Bipolar Transistor, 0.1 A, 50 V, 3-Pin SOT-23 | ON Semiconductor MMUN2116LT1G

***emi: PNP Bipolar Digital Transistor (BRT)

***enic: PNP - Pre-Biased 246mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS

***ark: Bias Resistor Transistor; Transistor Polarity:single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:4.7Kohm; Base Emitter Resistor R2:- Rohs Compliant: Yes

***nell: BIAS RESISTOR TRANSISTOR; COLLECTOR EMIT; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins

***th Star Micro: This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.

***ical: Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

***ure Electronics: MMUN Series 50 V 100 mA 10 kOhm PNP Silicon Bias Resistor Transistor - SOT-23

***(Formerly Allied Electronics): Digital Transistor PNP 100mA R=10K SOT23 | ON Semiconductor MMUN2115LT1G

***emi: PNP Bipolar Digital Transistor (BRT)

***enic: PNP - Pre-Biased 400mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS

*** Electronics: MMUN2115LT1G ON SEMI TRANS PREBIAS PNP 0.4W SOT23-3 RoHS

***ponent Stockers USA: 100 mA 50 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB

***ment14 APAC: Transistor, DIGITAL, SOT-23; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:-100mA;

***ark: Brt Transistor, 50V, 10Kohm, Sot-23, Full Reel; Transistor Polarity:single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes

***th Star Micro: This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.

***nell: TRANSISTOR, DIGITAL, SOT-23; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Product Range: MUN2115 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): -250mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 250hFE; Hfe Min: 160; No. of Pins: 3Pins; No. of Transistors: 1; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Pin Configuration: 2; Power Dissipation Pd: 246mW; Power Dissipation Ptot Max: 200mW; Resistance R1: 10kohm; SMD Marking: A6E; Transistor Case Style: SOT-23; Transistor Polarity: PNP; Transistor Type: Bias Resistor (BRT); Voltage Vcbo: 50V

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

***ical: Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R

*** Electronics: Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR

***emi: PNP Bipolar Digital Transistor (BRT)

***ark: Brt Transistor, 50V, 100Kohm, Sot-23-3; Transistor Polarity:single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:3 Pin Rohs Compliant: Yes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SMMUN2116LT1G DISTI # 26758769	ON Semiconductor	Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-23 T/R RoHS: Compliant	45000	99000:$0.0099 45000:$0.0119
SMMUN2116LT1G DISTI # SMMUN2116LT1G-ND	ON Semiconductor	TRANS PREBIAS PNP 0.246W SOT-23 RoHS: Compliant Min Qty: 21000 Container: Tape & Reel (TR)	Temporarily Out of Stock	21000:$0.0153
SMMUN2116LT1G DISTI # V36:1790_07277229	ON Semiconductor	Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-23 T/R RoHS: Compliant	0
SMMUN2116LT1G DISTI # SMMUN2116LT1G	ON Semiconductor	Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel (Alt: SMMUN2116LT1G) RoHS: Compliant Min Qty: 45000 Container: Reel	Americas - 0	450000:$0.0090 225000:$0.0092 135000:$0.0094 90000:$0.0095 45000:$0.0095
SMMUN2116LT1G DISTI # SMMUN2116LT1G	ON Semiconductor	Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R - Bulk (Alt: SMMUN2116LT1G) RoHS: Compliant Min Qty: 25000 Container: Bulk	Americas - 0	250000:$0.0123 125000:$0.0127 75000:$0.0128 50000:$0.0130 25000:$0.0131
SMMUN2116LT1G DISTI # 76T7323	ON Semiconductor	SS SOT23 BR XSTR SPCL TR / REEL	0	24000:$0.0130 1000:$0.0140 12000:$0.0140 500:$0.0230 100:$0.0240 250:$0.0240 50:$0.0540 1:$0.0940
SMMUN2116LT1G DISTI # 863-SMMUN2116LT1G	ON Semiconductor	Bipolar Transistors - Pre-Biased SS BR XSTR SPCL TR RoHS: Compliant	44660	1:$0.1100 10:$0.0940 100:$0.0340 1000:$0.0220 3000:$0.0170 9000:$0.0150 24000:$0.0140 45000:$0.0120
SMMUN2116LT1G	ON Semiconductor	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB RoHS: Compliant	96000	100:$0.0100 500:$0.0100 1000:$0.0100 1:$0.0200 25:$0.0200

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Verfügbarkeit

Aktie:: 44
Auf Bestellung:: 2027
Menge eingeben:

Der aktuelle Preis von SMMUN2116LT1G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,11 $~~; ~~0,11 $~~

10: ~~0,09 $~~; ~~0,94 $~~

100: ~~0,03 $~~; ~~3,40 $~~

1000: ~~0,02 $~~; ~~22,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SMMUN211 6
SMMUN21 7
SMMUN2 24
SMMU 29
SMM 2362

SMMUN2116LT1G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes