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SI4532CDY-T1-GE3

SI4532CDY-T1-GE3
Mfr. #:
SI4532CDY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs SO-8 N&P PAIR
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4532CDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4532CDY-T1-GE3 DatasheetSI4532CDY-T1-GE3 Datasheet (P4-P6)SI4532CDY-T1-GE3 Datasheet (P7-P9)SI4532CDY-T1-GE3 Datasheet (P10-P12)SI4532CDY-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Mehr Informationen:
SI4532CDY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
4.3 A, 6 A
Rds On - Drain-Source-Widerstand:
47 mOhms, 89 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
6 nC, 7.8 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.78 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI4
Transistortyp:
1 N-Channel, 1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
7 S
Abfallzeit:
6 ns, 7.7 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns, 13 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
14 ns, 17 ns
Typische Einschaltverzögerungszeit:
5.5 ns, 7 ns
Teil # Aliase:
SI4532CDY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI4532CDY-T1, SI4532CDY-T, SI4532C, SI4532, SI453, SI45, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***v
    S***v
    RU

    Order delivered quickly, good quality transistors, parameter dispersion is minimal, seller thanks and five stars!

    2019-04-16
    S***u
    S***u
    CA

    Corresponds to the description; packed in a puffy film. Diodes are excellent! I recommend!

    2019-05-11
    E***v
    E***v
    RU

    Everything would be fine, only to the analog outputs of the pad did not put, for this minus the star. Everything works fine.

    2019-02-04
    A***v
    A***v
    RU

    3 months waiting and parcel did not come. And went twice-the first time without explanation of the reasons returned to the seller. Conda i asked if he was going to send it again, the seller asked: and it is necessary yes? As a result, he took the money although the seller and nil + asked not to open a dispute.

    2019-03-12
***ied Electronics & Automation
SI4532CDY-T1-GE3 Dual N/P-channel MOSFET Transistor; 4.3 A; 6 A; 30V; 8-Pin SOIC
***et
Trans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R
***nell
MOSFET, NP CHANNEL, 30V, 6/-4.3A, SOIC-8
***mal
N/P-Ch MOSFET SO-8 30V 47/89 mohm @ 10V
***ure Electronics
N- AND P-CHANNEL 30-V (D-S) MOSFET
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
Teil # Mfg. Beschreibung Aktie Preis
SI4532CDY-T1-GE3
DISTI # SI4532CDY-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 30V 6A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.2791
SI4532CDY-T1-GE3
DISTI # SI4532CDY-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 30V 6A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3172
  • 500:$0.3966
  • 100:$0.5353
  • 10:$0.6940
  • 1:$0.7900
SI4532CDY-T1-GE3
DISTI # SI4532CDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 30V 6A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3172
  • 500:$0.3966
  • 100:$0.5353
  • 10:$0.6940
  • 1:$0.7900
SI4532CDY-T1-GE3
DISTI # SI4532CDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R (Alt: SI4532CDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4532CDY-T1-GE3
    DISTI # SI4532CDY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R (Alt: SI4532CDY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 2500:€0.3539
    • 5000:€0.2409
    • 10000:€0.2069
    • 15000:€0.1919
    • 25000:€0.1779
    SI4532CDY-T1-GE3
    DISTI # SI4532CDY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4532CDY-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.2539
    • 5000:$0.2469
    • 10000:$0.2369
    • 15000:$0.2299
    • 25000:$0.2239
    SI4532CDY-T1-GE3
    DISTI # 05W6945    		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 05W6945)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.7000
    • 10:$0.5590
    • 25:$0.5140
    • 50:$0.4690
    • 100:$0.4240
    • 250:$0.3870
    • 500:$0.3500
    SI4532CDY-T1-GE3
    DISTI # 15R5049    		Vishay IntertechnologiesMOSFET, NP CHANNEL, 30V, 6/-4.3A, SOIC-8, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
    • 1:$0.2400
    • 2500:$0.2380
    • 5000:$0.2310
    • 10000:$0.2230
    SI4532CDY-T1-GE3
    DISTI # 05W6945    		Vishay IntertechnologiesMOSFET, NP CHANNEL, 30V, 6/-4.3A, SOIC-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
    • 1:$0.7000
    • 10:$0.5590
    • 25:$0.5140
    • 50:$0.4690
    • 100:$0.4240
    • 250:$0.3870
    • 500:$0.3500
    • 1000:$0.2800
    SI4532CDY-T1-GE3
    DISTI # 70459541    		Vishay SiliconixSI4532CDY-T1-GE3 Dual N/P-channel MOSFET Transistor,4.3 A,6 A,30V,8-Pin SOIC
    RoHS: Compliant    		0
    • 2500:$0.3410
    • 5000:$0.3250
    • 10000:$0.3170
    SI4532CDY-T1-GE3
    DISTI # 781-SI4532CDY-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8 N&P PAIR
    RoHS: Compliant    		0
    • 1:$0.7000
    • 10:$0.5590
    • 100:$0.4240
    • 500:$0.3500
    • 1000:$0.3330
    • 2500:$0.2920
    SI4532CDY-T1-GE3
    DISTI # TMOSP10576    		Vishay IntertechnologiesCMOS30V6A47mOhm SO-8
    RoHS: Compliant    		Stock DE - 0Stock US - 0
    • 2500:$0.1990
    SI4532CDY-T1-GE3
    DISTI # SI4532CDY-GE3    		Vishay IntertechnologiesN+P-Ch 30V 6/4,3A 1,78W SO8
    RoHS: Compliant    		0
    • 50:€0.2675
    • 100:€0.2075
    • 500:€0.1775
    • 2500:€0.1715
    SI4532CDY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8 N&P PAIR
    RoHS: Compliant    		Americas -
    • 2500:$0.2340
    • 5000:$0.2210
    • 10000:$0.2140
    SI4532CDY-T1-GE3
    DISTI # 1779268    		Vishay IntertechnologiesMOSFET, NP-CH, 30V, SO8
    RoHS: Compliant    		0
    • 5:£0.4420
    • 25:£0.3780
    • 100:£0.3130
    • 250:£0.2920
    • 500:£0.2700
    SI4532CDY-T1-GE3
    DISTI # 1779268    		Vishay IntertechnologiesMOSFET, NP-CH, 30V, SO8
    RoHS: Compliant    		0
    • 1:$1.1100
    • 10:$0.8850
    • 100:$0.6710
    • 500:$0.5540
    • 1000:$0.4910
    SI4532CDY-T1-GE3
    DISTI # 1779268RL    		Vishay IntertechnologiesMOSFET, NP-CH, 30V, SO8
    RoHS: Compliant    		0
    • 1:$1.1100
    • 10:$0.8850
    • 100:$0.6710
    • 500:$0.5540
    • 1000:$0.4910
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    Mfr.#: SI2308CDS-T1-GE3

    OMO.#: OMO-SI2308CDS-T1-GE3-VISHAY

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    OMO.#: OMO-TC4427COA713-MICROCHIP-TECHNOLOGY

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    CRCW0603100KFKEAC

    Mfr.#: CRCW0603100KFKEAC

    OMO.#: OMO-CRCW0603100KFKEAC-VISHAY-DALE

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    Verfügbarkeit
    Aktie:
    17
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von SI4532CDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,69 $
    0,69 $
    10
    0,56 $
    5,58 $
    100
    0,42 $
    42,30 $
    500
    0,35 $
    175,00 $
    1000
    0,28 $
    280,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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