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IPW65R190CFDA

IPW65R190CFDA
Mfr. #:
IPW65R190CFDA
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 650V 17.5A TO247-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPW65R190CFDA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPW65R190CFDA Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
17.5 A
Rds On - Drain-Source-Widerstand:
171 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
68 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
151 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
21.1 mm
Länge:
16.13 mm
Serie:
CoolMOS CFDA
Transistortyp:
1 N-Channel
Breite:
5.21 mm
Marke:
Infineon-Technologien
Abfallzeit:
6.4 ns
Produktart:
MOSFET
Anstiegszeit:
8.4 ns
Werkspackungsmenge:
240
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
53.2 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
IPW65R190CFDAFKSA1 IPW65R19CFDAXK SP000928268
Gewichtseinheit:
0.211644 oz
Tags
IPW65R190CF, IPW65R190C, IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPW65R190CFDAFKSA1
DISTI # 31039088		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		480
  • 500:$2.8608
  • 250:$3.1872
  • 240:$3.3600
IPW65R190CFDAFKSA1
DISTI # IPW65R190CFDAFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 17.5A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$4.0468
IPW65R190CFDAFKSA1
DISTI # V36:1790_06376985		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IPW65R190CFDAFKSA1
    DISTI # IPW65R190CFDAFKSA1    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Bulk (Alt: IPW65R190CFDAFKSA1)
    Min Qty: 148
    Container: Bulk    		Americas - 0
    • 148:$2.2900
    • 150:$2.1900
    • 298:$2.0900
    • 740:$2.0900
    • 1480:$1.9900
    IPW65R190CFDAFKSA1
    DISTI # IPW65R190CFDAFKSA1    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW65R190CFDAFKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 240:$2.4900
    • 480:$2.3900
    • 960:$2.3900
    • 1440:$2.2900
    • 2400:$2.1900
    IPW65R190CFDAFKSA1
    DISTI # IPW65R190CFDA    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPW65R190CFDA)
    RoHS: Compliant
    Min Qty: 240    		Asia - 0
    • 240:$2.5637
    • 480:$2.4925
    • 720:$2.4251
    • 1200:$2.3613
    • 2400:$2.3306
    • 6000:$2.3008
    • 12000:$2.2717
    IPW65R190CFDAFKSA1
    DISTI # SP000928268    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP000928268)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€3.0900
    • 10:€2.4900
    • 25:€2.2900
    • 50:€2.1900
    • 100:€2.0900
    • 500:€2.0900
    • 1000:€1.9900
    IPW65R190CFDAFKSA1
    DISTI # 726-IPW65R190CFDAFKS    		Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3
    RoHS: Compliant    		190
    • 1:$4.7500
    • 10:$4.0300
    • 100:$3.5000
    • 250:$3.3200
    • 500:$2.9800
    IPW65R190CFDA
    DISTI # 726-IPW65R190CFDA    		Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3
    RoHS: Compliant    		11
    • 1:$4.7500
    • 10:$4.0300
    • 100:$3.5000
    • 250:$3.3200
    • 500:$2.9800
    IPW65R190CFDAFKSA1Infineon Technologies AGPower Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		240
    • 1000:$2.1600
    • 500:$2.2700
    • 100:$2.3700
    • 25:$2.4700
    • 1:$2.6600
    IPW65R190CFDAFKSA1
    DISTI # 8577129    		Infineon Technologies AGMOSFET 650V 17A COOLMOS CFDA AUTO TO247, TU450
    • 480:£1.5590
    • 240:£1.5910
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    OMO.#: OMO-NTCALUG03A103HC-VISHAY

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    OMO.#: OMO-LMH6619MA-NOPB-TEXAS-INSTRUMENTS

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    Verfügbarkeit
    Aktie:
    11
    Auf Bestellung:
    1994
    Menge eingeben:
    Der aktuelle Preis von IPW65R190CFDA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,75 $
    4,75 $
    10
    4,03 $
    40,30 $
    100
    3,50 $
    350,00 $
    250
    3,32 $
    830,00 $
    500
    2,98 $
    1 490,00 $
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