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SIHB22N60AEL-GE3

SIHB22N60AEL-GE3
Mfr. #:
SIHB22N60AEL-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHB22N60AEL-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB22N60AEL-GE3 DatasheetSIHB22N60AEL-GE3 Datasheet (P4-P6)SIHB22N60AEL-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIHB22N60AEL-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
21 A
Rds On - Drain-Source-Widerstand:
180 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
41 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
208 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Serie:
EL
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
15 S
Abfallzeit:
28 ns
Produktart:
MOSFET
Anstiegszeit:
24 ns
Werkspackungsmenge:
1
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
86 ns
Typische Einschaltverzögerungszeit:
27 ns
Tags
SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
EL Series High Voltage MOSFETs
Vishay Semiconductors EL Series High Voltage MOSFETs are N-channel MOSFETs that reduces switching and conduction losses. These high voltage MOSFETs feature low Figure-Of-Merit (FOM), low input capacitance, and low gate charge. The EL high voltage MOSFETs operate in 650V drain-to-source voltage (VDS) and employs single configuration. These high voltage MOSFETs come with Unclamped Inductive Switching (UIS) avalanche energy rating. Typical applications include server and telecom power supplies, lighting, welding, induction heating, motor drives, and battery chargers.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHB22N60AEL-GE3
DISTI # SIHB22N60AEL-GE3-ND		Vishay SiliconixMOSFET N-CHAN 600V
RoHS: Compliant
Min Qty: 1
Container: Tube		100In Stock
  • 3000:$2.0720
  • 1000:$2.1756
  • 100:$3.0303
  • 25:$3.4964
  • 10:$3.6990
  • 1:$4.1200
SIHB22N60AEL-GE3
DISTI # SIHB22N60AEL-GE3		Vishay Intertechnologies600 V EL SERIES POWER MOSFET - Tape and Reel (Alt: SIHB22N60AEL-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$1.7900
  • 6000:$1.8900
  • 2000:$1.9900
  • 4000:$1.9900
  • 1000:$2.0900
SIHB22N60AEL-GE3
DISTI # 59AC7370		Vishay IntertechnologiesN-CHANNEL 600V0
  • 2500:$1.8800
  • 1000:$2.0300
  • 500:$2.2800
  • 100:$2.5200
  • 50:$2.8500
  • 25:$3.0800
  • 10:$3.3300
  • 1:$3.7600
SIHB22N60AEL-GE3
DISTI # 78-SIHB22N60AEL-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		948
  • 1:$4.1400
  • 10:$3.4300
  • 100:$2.8200
  • 250:$2.7300
  • 500:$2.4500
  • 1000:$2.0700
  • 2500:$1.9600
SIHB22N60AEL-GE3
DISTI # 2932919		Vishay IntertechnologiesMOSFET, N-CH, 600V, 21A, 150DEG C, 208W
RoHS: Compliant		49
  • 500:£2.2700
  • 250:£2.5500
  • 100:£2.8200
  • 10:£3.4300
  • 1:£4.2700
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Verfügbarkeit
Aktie:
948
Auf Bestellung:
2931
Menge eingeben:
Der aktuelle Preis von SIHB22N60AEL-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,14 $
4,14 $
10
3,43 $
34,30 $
100
2,82 $
282,00 $
250
2,73 $
682,50 $
500
2,45 $
1 225,00 $
1000
2,07 $
2 070,00 $
2500
1,96 $
4 900,00 $
5000
1,89 $
9 450,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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