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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFP25N06L | Harris Semiconductor | Power Field-Effect Transistor, 25A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 1493 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: RFP2N10L OMO.#: OMO-RFP2N10L |
MOSFET TO-220AB N-Ch Power |
|
Mfr.#: RFP20100CT OMO.#: OMO-RFP20100CT-1190 |
Neu und Original |
|
Mfr.#: RFP22N10 |
MOSFET N-CH 100V 22A TO-220AB |
|
|
Mfr.#: RFP23N06LE OMO.#: OMO-RFP23N06LE-1190 |
Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: RFP25-10 OMO.#: OMO-RFP25-10-1190 |
Neu und Original |
|
|
Mfr.#: RFP250375--4Z50-2 OMO.#: OMO-RFP250375--4Z50-2-1190 |
0 MHz - 2000 MHz 50 ohm RF/MICROWAVE TERMINATION |
|
|
Mfr.#: RFP2503754V1K OMO.#: OMO-RFP2503754V1K-1190 |
Neu und Original |
|
|
Mfr.#: RFP2N12 OMO.#: OMO-RFP2N12-1190 |
- Bulk (Alt: RFP2N12) |
|
|
Mfr.#: RFP2N18L OMO.#: OMO-RFP2N18L-1190 |
Neu und Original |
|
|
Mfr.#: RFP2P08 OMO.#: OMO-RFP2P08-1190 |
Power Field-Effect Transistor, 2A I(D), 80V, 3.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |