SI8406DB-T2-E1

Mfr. #:: SI8406DB-T2-E1
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 20V Vds 8V Vgs MICRO FOOT 1.5 x 1
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI8406DB-T2-E1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI8406DB-T2-E1 Datasheet SI8406DB-T2-E1 Datasheet (P4-P6)SI8406DB-T2-E1 Datasheet (P7-P8)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Handelsname:: TrenchFET

Verpackung:: Spule

Serie:: SI8

Marke:: Vishay / Siliconix

Produktart:: MOSFET

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Tags: SI840, SI84, SI8

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8406DB-T2-E1 Beschreibung

***ure Electronics: Si8406DB Series 20 V 0.033 Ohm SMT N-Channel MOSFET - MICRO FOOT

***et: Trans MOSFET N-CH 20V 7.8A 6-Pin Micro Foot T/R

***nell: MOSFET N-CH, 20V, MICROFOOT; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:13W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MICRO FOOT; No. of Pins:6; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI8406DB-T2-E1 DISTI # V72:2272_09216551	Vishay Intertechnologies	Trans MOSFET N-CH 20V 7.8A 6-Pin Micro Foot RoHS: Compliant	3000	75000:$0.1787 30000:$0.1815 15000:$0.1842 6000:$0.1870 3000:$0.1897 1000:$0.1925 500:$0.1952 250:$0.1980 100:$0.2200 50:$0.2444 25:$0.2716 10:$0.3018 1:$0.3343
SI8406DB-T2-E1 DISTI # V99:2348_09216551	Vishay Intertechnologies	Trans MOSFET N-CH 20V 7.8A 6-Pin Micro Foot RoHS: Compliant	0
SI8406DB-T2-E1 DISTI # V36:1790_09216551	Vishay Intertechnologies	Trans MOSFET N-CH 20V 7.8A 6-Pin Micro Foot RoHS: Compliant	0
SI8406DB-T2-E1 DISTI # SI8406DB-T2-E1CT-ND	Vishay Siliconix	MOSFET N-CH 20V 16A MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	736In Stock	500:$0.3634 100:$0.4903 10:$0.6480 1:$0.7600
SI8406DB-T2-E1 DISTI # SI8406DB-T2-E1DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 16A MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI8406DB-T2-E1 DISTI # SI8406DB-T2-E1TR-ND	Vishay Siliconix	MOSFET N-CH 20V 16A MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.2527
SI8406DB-T2-E1 DISTI # 32739611	Vishay Intertechnologies	Trans MOSFET N-CH 20V 7.8A 6-Pin Micro Foot RoHS: Compliant	3000	30000:$0.1951 15000:$0.1980 6000:$0.2010 3000:$0.2039 1000:$0.2069 500:$0.2098 250:$0.2129 100:$0.2365 50:$0.2627 33:$0.2920
SI8406DB-T2-E1 DISTI # SI8406DB-T2-E1	Vishay Intertechnologies	Trans MOSFET N-CH 20V 7.8A 6-Pin Micro Foot T/R - Tape and Reel (Alt: SI8406DB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SI8406DB-T2-E1 DISTI # SI8406DB-T2-E1	Vishay Intertechnologies	Trans MOSFET N-CH 20V 7.8A 6-Pin Micro Foot T/R (Alt: SI8406DB-T2-E1) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.4809 6000:€0.3279 12000:€0.2819 18000:€0.2609 30000:€0.2419
SI8406DB-T2-E1 DISTI # 63W4153	Vishay Intertechnologies	MOSFET Transistor, N Channel, 16 A, 20 V, 0.026 ohm, 4.5 V, 400 mV RoHS Compliant: Yes	4535	1000:$0.2390 500:$0.3090 100:$0.3760 50:$0.4190 25:$0.4630 10:$0.5060 1:$0.6600
SI8406DB-T2-E1 DISTI # 78-SI8406DB-T2-E1	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs MICRO FOOT 1.5 x 1 RoHS: Compliant	6000	1:$0.6600 10:$0.5060 100:$0.3760 500:$0.3090 1000:$0.2390
SI8406DB-T2-E1	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs MICRO FOOT 1.5 x 1 RoHS: Compliant	Americas -
SI8406DB-T2-E1 DISTI # 2283660	Vishay Intertechnologies	MOSFET N-CH, 20V, MICROFOOT RoHS: Compliant	4535	3000:$0.3530 1000:$0.3600 500:$0.4660 100:$0.5670 10:$0.7630 1:$0.9950
SI8406DB-T2-E1 DISTI # 2283660	Vishay Intertechnologies	MOSFET N-CH, 20V, MICROFOOT RoHS: Compliant	4685	500:£0.2830 250:£0.3140 100:£0.3440 25:£0.4880 5:£0.5520

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: MAX44284FAWT+T OMO.#: OMO-MAX44284FAWT-T	Current Sense Amplifiers MAX44284FAWT+T
	Mfr.#: LT8301HS5#TRMPBF OMO.#: OMO-LT8301HS5-TRMPBF	Switching Voltage Regulators 42VIN Micropower Isolated Flyback Converter with 65V/1.2A Switch
	Mfr.#: CDRH127/LDNP-100MC OMO.#: OMO-CDRH127-LDNP-100MC	Fixed Inductors 10uH 6.7A
	Mfr.#: MAX44284FAWT+T OMO.#: OMO-MAX44284FAWT-T-MAXIM-INTEGRATED	Current Sense Amplifiers MAX44284FAWT+T
	Mfr.#: RT0402BRD0727K4L OMO.#: OMO-RT0402BRD0727K4L-YAGEO	Thin Film Resistors - SMD 1/16W 27.4K ohm .1% 25ppm
	Mfr.#: CDRH127/LDNP-100MC OMO.#: OMO-CDRH127-LDNP-100MC-SUMIDA	Fixed Inductors 10uH 6.7A

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1989
Menge eingeben:

Der aktuelle Preis von SI8406DB-T2-E1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

SI840 48
SI84 503
SI8 2441

Neueste Produkte

SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
TrenchFET® Power MOSFET Optimized for Standar

Vishay's 60 V TrenchFET® Gen IV n-channel power MOSFET is optimized for standard gate drives.
650 V Fast Body Diode MOSFETs

Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE

Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
Compare SI8406DB-T2-E1

SI8400 vs SI8400AAAIS vs SI8400AAAISR
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.

More Newest Products

SI8406DB-T2-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes