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STGW80H65DFB

STGW80H65DFB
Mfr. #:
STGW80H65DFB
Hersteller:
STMicroelectronics
Beschreibung:
IGBT 650V 120A 469W TO-247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGW80H65DFB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGW80H65DFB Mehr Informationen STGW80H65DFB Product Details
Produkteigenschaft
Attributwert
Hersteller
STMicroelectronics
Produktkategorie
IGBTs - Single
Serie
600-650V IGBTs
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247
Aufbau
Single
Leistung max
469W
Reverse-Recovery-Time-trr
85ns
Strom-Kollektor-Ic-Max
120A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
Grabenfeldstopp
Strom-Kollektor-gepulster-Icm
240A
Vce-on-Max-Vge-Ic
2V @ 15V, 80A
Schaltenergie
2.1mJ (on), 1.5mJ (off)
Gate-Gebühr
414nC
Td-ein-aus-25°C
84ns/280ns
Testbedingung
400V, 80A, 10 Ohm, 15V
Pd-Verlustleistung
469 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
1.6 V
Kontinuierlicher Kollektorstrom-bei-25-C
120 A
Gate-Emitter-Leckstrom
250 nA
Maximale Gate-Emitter-Spannung
20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
80 A
Tags
STGW80H, STGW80, STGW8, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247
***ure Electronics
HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-247
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube
***ied Electronics & Automation
IGBT N-Ch 650V 80A High-Speed TO247
***i-Key
IGBT 650V 120A 469W TO-247
***ark
IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
IGBT SINGOLO 650V 120A TO-247; Corrente di Collettore CC:120A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:469W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Teil # Mfg. Beschreibung Aktie Preis
STGW80H65DFB
DISTI # V36:1790_06560788		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    STGW80H65DFB
    DISTI # 497-14368-ND    		STMicroelectronicsIGBT 650V 120A 469W TO-247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 1020:$4.8225
    • 510:$5.4525
    • 120:$6.1770
    • 30:$7.0277
    • 1:$8.0700
    STGW80H65DFB-4
    DISTI # STGW80H65DFB-4-ND    		STMicroelectronicsIGBT BIPO 650V 80A TO247
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Temporarily Out of Stock
    • 600:$9.9325
    STGW80H65DFB
    DISTI # STGW80H65DFB    		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube (Alt: STGW80H65DFB)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€4.7900
    • 10:€4.3900
    • 25:€4.1900
    • 50:€3.9900
    • 100:€3.8900
    • 500:€3.6900
    • 1000:€3.4900
    STGW80H65DFB
    DISTI # STGW80H65DFB    		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65DFB)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 600:$4.3900
    • 1200:$4.1900
    • 2400:$3.9900
    • 3600:$3.8900
    • 6000:$3.7900
    STGW80H65DFB
    DISTI # STGW80H65DFB-4    		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65DFB-4)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 600:$8.5900
    • 1200:$8.1900
    • 2400:$7.8900
    • 3600:$7.4900
    • 6000:$7.3900
    STGW80H65DFB
    DISTI # 45AC7608    		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Bulk (Alt: 45AC7608)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 1:$7.1400
    • 10:$6.4600
    • 25:$6.1600
    • 50:$5.7500
    • 100:$5.3400
    • 250:$5.1100
    • 500:$4.6500
    STGW80H65DFB-4
    DISTI # STGW80H65DFB-4    		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 4-Pin TO-247 Tube (Alt: STGW80H65DFB-4)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€8.7900
    • 10:€8.0900
    • 25:€7.6900
    • 50:€7.3900
    • 100:€7.1900
    • 500:€6.8900
    • 1000:€6.3900
    STGW80H65DFB
    DISTI # 45AC7608    		STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-247,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes0
    • 500:$4.7000
    • 250:$5.1500
    • 100:$5.3900
    • 50:$5.8000
    • 25:$6.2100
    • 10:$6.5100
    • 1:$7.2000
    STGW80H65DFB-4
    DISTI # 26Y5820    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 1:$7.2500
    STGW80H65DFB
    DISTI # 511-STGW80H65DFB    		STMicroelectronicsIGBT Transistors Trench gte FieldStop IGBT 650V 80A
    RoHS: Compliant    		0
    • 1:$7.1300
    • 10:$6.4500
    • 25:$6.1500
    • 100:$5.3400
    • 250:$5.1000
    • 500:$4.6500
    • 1000:$4.0500
    STGW80H65DFB-4
    DISTI # 511-STGW80H65DFB-4    		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed0
    • 1:$12.1700
    • 10:$11.1900
    • 25:$10.7300
    • 100:$9.4500
    • 250:$8.9900
    • 500:$8.4100
    • 1000:$7.7100
    STGW80H65DFBACTIVE COMPNTS/DIODES 25
      STGW80H65DFB
      DISTI # 7925814P      		STMicroelectronicsIGBT N-CH 650V 80A HIGH-SPEED TO247, TU384
      • 20:£4.5800
      • 10:£4.6700
      STGW80H65DFB
      DISTI # 2807180      		STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-247
      RoHS: Compliant      		472
      • 1020:$6.3200
      • 510:$7.2600
      • 120:$8.3300
      • 30:$9.5900
      • 1:$11.1400
      STGW80H65DFB
      DISTI # 2807180      		STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-247
      RoHS: Compliant      		472
      • 100:£4.2300
      • 50:£4.5600
      • 10:£4.8800
      • 5:£5.6600
      • 1:£6.2000
      Bild Teil # Beschreibung
      STGW80V60DF

      Mfr.#: STGW80V60DF

      OMO.#: OMO-STGW80V60DF

      		 IGBT Transistors Trench gate V series 600V 80A HiSpd
      STGW80H65FB

      Mfr.#: STGW80H65FB

      OMO.#: OMO-STGW80H65FB

      		 IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
      STGW80H65DFB

      Mfr.#: STGW80H65DFB

      OMO.#: OMO-STGW80H65DFB

      		 IGBT Transistors Trench gte FieldStop IGBT 650V 80A
      STGW80H65FB-4

      Mfr.#: STGW80H65FB-4

      OMO.#: OMO-STGW80H65FB-4

      		 IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
      STGW80H65DFB-4

      Mfr.#: STGW80H65DFB-4

      OMO.#: OMO-STGW80H65DFB-4-STMICROELECTRONICS

      		 IGBT Transistors IGBT & Power Bipola
      STGW80H65FB-4

      Mfr.#: STGW80H65FB-4

      OMO.#: OMO-STGW80H65FB-4-STMICROELECTRONICS

      		 IGBT Transistors IGBT & Power Bipola
      STGW80H65FB

      Mfr.#: STGW80H65FB

      OMO.#: OMO-STGW80H65FB-STMICROELECTRONICS

      		 IGBT Transistors IGBT & Power Bipola
      STGW80V60F

      Mfr.#: STGW80V60F

      OMO.#: OMO-STGW80V60F-STMICROELECTRONICS

      		 IGBT Transistors IGBT & Power Bipola
      STGW80V60DF

      Mfr.#: STGW80V60DF

      OMO.#: OMO-STGW80V60DF-STMICROELECTRONICS

      		 IGBT 600V 120A 469W TO247
      STGW80H65DFB

      Mfr.#: STGW80H65DFB

      OMO.#: OMO-STGW80H65DFB-STMICROELECTRONICS

      		 IGBT 650V 120A 469W TO-247
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von STGW80H65DFB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      5,68 $
      5,68 $
      10
      5,40 $
      54,01 $
      100
      5,12 $
      511,65 $
      500
      4,83 $
      2 416,15 $
      1000
      4,55 $
      4 548,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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