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AOB15B65M1

AOB15B65M1
Mfr. #:
AOB15B65M1
Hersteller:
Alpha & Omega Semiconductor Inc
Beschreibung:
IGBT 650V 30A TO263
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AOB15B65M1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
AOB15, AOB1, AOB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans IGBT Chip N-CH 650V 30A 214000mW 3-Pin(2+Tab) D2PAK T/R
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650V, 15A AlphaIGBT(TM) With Soft and Fast Recovery Anti-Parallel Diode, TO263-3, RoHS
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IGBT 650V 30A TO263
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 15 A low loss
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Trans IGBT Chip N-CH 650V 30A 136000mW 3-Pin(2+Tab) D2PAK T/R
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Short-circuit rugged IGBT, D2PAK, Tape and Reel
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-263AB
***i-Key
TRENCH GATE FIELD-STOP IGBT M SE
***ical
Trans IGBT Chip N-CH 600V 30A 130000mW 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.9pF 25volts C0G +/-0.5pF
***ineon SCT
Infineon's 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS
***ment14 APAC
IGBT,600V,15A,TO263; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Power Dissipation Max:130W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 650V 21A 3-Pin(2+Tab) D2PAK Tube
***ark
Igbt, Single, 650V, 21A, To-263Ab-3
***nell
IGBT, SINGLE, 650V, 21A, TO-263AB-3; DC Collector Current: 21A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-263AB; No. of
***or
IGBT, 31A, 600V, N-CHANNEL
***el Electronic
IGBT 600V 31A 139W TO263-3
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Contact for details
***-Wing Technology
Tube Surface Mount N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.7V @ 15V 7A 28A 125W 31ns
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TO-263AB, COMP, N-CH, 600V SMPS II IGBT W/STEALTH DIODE
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers Comp N-Ch 600V
Teil # Mfg. Beschreibung Aktie Preis
AOB15B65M1
DISTI # V36:1790_16266521		Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 30A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 800000:$0.7842
  • 400000:$0.7859
  • 80000:$0.8887
  • 8000:$1.0480
  • 800:$1.0730
Bild Teil # Beschreibung
AOB15B60D

Mfr.#: AOB15B60D

OMO.#: OMO-AOB15B60D-ALPHA-AND-OMEGA-SEMICONDUCTOR

 IGBT 600V 30A 167W TO263
AOB15B65M1

Mfr.#: AOB15B65M1

OMO.#: OMO-AOB15B65M1-ALPHA-AND-OMEGA-SEMICONDUCTOR

 IGBT 650V 30A TO263
AOB15S60

Mfr.#: AOB15S60

OMO.#: OMO-AOB15S60-1190

 Neu und Original
AOB15S60L

Mfr.#: AOB15S60L

OMO.#: OMO-AOB15S60L-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 600V 15A D2PAK
AOB15S65

Mfr.#: AOB15S65

OMO.#: OMO-AOB15S65-1190

 Neu und Original
AOB15S65L

Mfr.#: AOB15S65L

OMO.#: OMO-AOB15S65L-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 650V 15A TO263
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von AOB15B65M1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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