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STP240N10F7

STP240N10F7
Mfr. #:
STP240N10F7
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Ch 100V 2.5mOhm 180A STripFET VII
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STP240N10F7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STP240N10F7 Mehr Informationen STP240N10F7 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
110 A
Rds On - Drain-Source-Widerstand:
3.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
160 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
StripFET
Verpackung:
Rohr
Serie:
STP240N10F7
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
112 ns
Produktart:
MOSFET
Anstiegszeit:
139 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
110 ns
Typische Einschaltverzögerungszeit:
49 ns
Gewichtseinheit:
0.011640 oz
Tags
STP24, STP2, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 100 V, 2.85 mOhm typ., 110 A STripFET F7 Power MOSFET in a TO-220 package
***ical
Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 100V 110A STripFET F7 TO-220
***ark
MOSFET, N-CH, 100V, 110A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
***ical
Trans MOSFET N-CH Si 80V 223A 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
N-Channel 80 V 2.7 mOhm 178 nC Flange Mount Power Trench Mosfet - TO-220
***emi
N-Channel PowerTrench® MOSFET 80V, 223A, 2.7mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 80V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***p One Stop
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
Single N-Channel 100 V 3 mOhm 155 nC OptiMOS™ Power Mosfet - TO-220-3
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V; Power Dissipation:300W; No. of Pins:3Pins RoHS Compliant: Yes
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO220-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 100 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 28 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 84 / Turn-ON Delay Time ns = 34 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 300
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***icroelectronics
N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package
*** Source Electronics
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N CH 100V 180A TO-220
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; On Resistance Rds(On):0.0023Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Msl:- Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ure Electronics
Single N-Channel 80 V 2.8 mOhm 155 nC OptiMOS™ Power Mosfet - TO-220-3
***ow.cn
Trans MOSFET N-CH 80V 100A Automotive 3-Pin(3+Tab) TO-220 Tube
***ponent Stockers USA
100 A 80 V 0.0028 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***ment14 APAC
MOSFET, N CH, 100A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:100A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***ure Electronics
IPP030N10N5 Series 100 V 120 A OptiMOS™5 Power Transistor MOSFET - TO-220-3
***ical
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(3+Tab) TO-220 Tube
***ark
MOSFET, N-CH, 100V, 120A, 175DEG C, 250W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***emi
N-Channel Power MOSFET, QFET®, 100 V, 164 A, 4.7 mΩ, TO-220
***Yang
Trans MOSFET N-CH 100V 164A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
FDP047N10 Series 100 V 164 A 4.7 mOhm N-Channel PowerTrench Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET,N CH,100V,120A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011)
STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
STripFET™ F7 Power MOSFETs
STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. The STripFET F7 feature high avalanche ruggedness.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
STMicroelectronics STripFET VII Power MOSFETs
Teil # Mfg. Beschreibung Aktie Preis
STP240N10F7
DISTI # 25948144		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		440
  • 3:$4.6002
STP240N10F7
DISTI # 497-13588-5-ND		STMicroelectronicsMOSFET N-CH 100V 180A TO220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$3.1017
STP240N10F7
DISTI # V99:2348_17625125		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		440
  • 1:$4.6002
STP240N10F7
DISTI # V36:1790_06564633		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 1000:$2.4580
STP240N10F7
DISTI # STP240N10F7		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin TO-220 Tube (Alt: STP240N10F7)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 700
  • 1000:€1.2900
  • 100:€1.3900
  • 500:€1.3900
  • 50:€1.4900
  • 10:€1.5900
  • 25:€1.5900
  • 1:€1.7900
STP240N10F7
DISTI # STP240N10F7		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin TO-220 Tube (Alt: STP240N10F7)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Asia - 0
  • 50000:$1.1184
  • 25000:$1.1486
  • 10000:$1.1806
  • 5000:$1.2319
  • 3000:$1.2879
  • 2000:$1.3492
  • 1000:$1.4167
STP240N10F7
DISTI # STP240N10F7		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP240N10F7)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$2.5900
  • 6000:$2.6900
  • 4000:$2.7900
  • 2000:$2.9900
  • 1000:$3.0900
STP240N10F7
DISTI # 45AC7711		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin TO-220 Tube - Bulk (Alt: 45AC7711)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 500:$2.4500
  • 250:$2.6100
  • 100:$3.2000
  • 50:$3.7900
  • 25:$4.1500
  • 10:$4.7500
  • 1:$5.5900
STP240N10F7
DISTI # 45AC7711		STMicroelectronicsMOSFET, N-CH, 100V, 110A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:110A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.00285ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V RoHS Compliant: Yes223
  • 250:$1.8100
  • 500:$1.8100
  • 1:$1.9700
  • 10:$1.9700
  • 25:$1.9700
  • 50:$1.9700
  • 100:$1.9700
STP240N10F7
DISTI # 511-STP240N10F7		STMicroelectronicsMOSFET N-Ch 100V 2.5mOhm 180A STripFET VII
RoHS: Compliant		457
  • 1:$5.5800
  • 10:$4.7400
  • 100:$4.1100
  • 250:$3.9000
  • 500:$3.5000
  • 1000:$2.9500
  • 2000:$2.8000
STP240N10F7
DISTI # 8607567P		STMicroelectronicsMOSFET N-CH 100V 110A STRIPFET F7 TO-220, TU692
  • 10:£1.1150
STP240N10F7
DISTI # 2807215		STMicroelectronicsMOSFET, N-CH, 100V, 110A, TO-220AB
RoHS: Compliant		687
  • 1000:$2.4300
  • 500:$2.6100
  • 250:$2.9300
  • 100:$3.2500
  • 10:$3.6700
  • 1:$4.2100
STP240N10F7
DISTI # 2807215		STMicroelectronicsMOSFET, N-CH, 100V, 110A, TO-220AB687
  • 500:£2.7200
  • 250:£3.0400
  • 100:£3.2000
  • 10:£3.6900
  • 1:£4.8000
STP240N10F7
DISTI # XSKDRABV0028137		STMicroelectronicsPowerField-EffectTransistor,80AI(D),55V,0.008ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB
RoHS: Compliant		550 in Stock0 on Order
  • 550:$2.1200
  • 300:$2.2700
STP240N10F7
DISTI # STP240N10F7		STMicroelectronicsN-Ch 100V 110A 300W 0,0032R TO220
RoHS: Compliant		0
  • 10:€1.8800
  • 50:€1.5800
  • 200:€1.4300
  • 500:€1.3800
Bild Teil # Beschreibung
IPP039N10N5AKSA1

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A750MS477M1EAAE015

Mfr.#: A750MS477M1EAAE015

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Verfügbarkeit
Aktie:
457
Auf Bestellung:
2440
Menge eingeben:
Der aktuelle Preis von STP240N10F7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,58 $
5,58 $
10
4,74 $
47,40 $
100
4,11 $
411,00 $
250
3,90 $
975,00 $
500
3,50 $
1 750,00 $
1000
2,95 $
2 950,00 $
2000
2,80 $
5 600,00 $
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