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IRGB4045DPBF

IRGB4045DPBF
Mfr. #:
IRGB4045DPBF
Hersteller:
Infineon / IR
Beschreibung:
IGBT Transistors 600V UltraFast Trench IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRGB4045DPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGB4045DPBF DatasheetIRGB4045DPBF Datasheet (P4-P6)IRGB4045DPBF Datasheet (P7-P9)IRGB4045DPBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-220-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
2 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
12 A
Pd - Verlustleistung:
77 W
Minimale Betriebstemperatur:
- 55 C
Verpackung:
Rohr
Höhe:
9.02 mm
Länge:
10.66 mm
Breite:
4.82 mm
Marke:
Infineon / IR
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
50
Unterkategorie:
IGBTs
Teil # Aliase:
SP001537650
Gewichtseinheit:
0.211644 oz
Tags
IRGB404, IRGB40, IRGB4, IRGB, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 600V 12A 77000mW 3-Pin(3+Tab) TO-220AB Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ineon
Target Applications: Dishwasher; Fan; Lighting HID; Pump; Refridgeration; Solar
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2 V Current release time: 17 ns Power dissipation: 77 W
***ment14 APAC
IGBT, 6A 600V, TO-220; Transistor Type:IGBT; DC Collector Current:12A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:77W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:12A; Package / Case:TO-220; Power Dissipation Max:77mW; Power Dissipation Pd:77W; Power Dissipation Pd:77W; Pulsed Current Icm:20A; Rise Time:11ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Teil # Mfg. Beschreibung Aktie Preis
IRGB4045DPBF
DISTI # IRGB4045DPBF-ND		Infineon Technologies AGIGBT 600V 12A 77W TO220AB
RoHS: Compliant
Min Qty: 250
Container: Tube		Limited Supply - Call
    IRGB4045DPBF
    DISTI # 942-IRGB4045DPBF    		Infineon Technologies AGIGBT Transistors 600V UltraFast Trench IGBT
    RoHS: Compliant    		14
    • 1:$2.2800
    • 10:$1.9400
    • 100:$1.5500
    • 500:$1.3600
    • 1000:$1.1200
    • 2500:$1.0400
    • 5000:$1.0000
    IRGB4045DPBF
    DISTI # IRGB4045DPBF    		Infineon Technologies AG600V 12A 77W TO220AB
    RoHS: Compliant    		80
    • 10:€1.3000
    • 50:€1.1000
    • 100:€1.0000
    • 200:€0.9500
    IRGB4045DPBFInternational Rectifier 
    RoHS: Compliant    		Europe - 200
      IRGB4045DPBF
      DISTI # 1561051      		Infineon Technologies AG 
      RoHS: Compliant      		0
      • 1:$3.6200
      • 10:$3.0700
      • 100:$2.8700
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1992
      Menge eingeben:
      Der aktuelle Preis von IRGB4045DPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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