OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

R6020ANX

R6020ANX
Mfr. #:
R6020ANX
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET Nch 600V 20A MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
R6020ANX Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
R6020ANX Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
20 A
Rds On - Drain-Source-Widerstand:
220 mOhms
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
50 W
Verpackung:
Schüttgut
Marke:
ROHM Halbleiter
Vorwärtstranskonduktanz - Min:
7 S
Produktart:
MOSFET
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Teil # Aliase:
R6020ANX
Gewichtseinheit:
0.211644 oz
Tags
R6020ANX, R6020A, R6020, R602, R60
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FM Bulk
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
600V 22A 165m´Î@10V11A 39W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET Transistor; Transistor Polarity: N; MOSFET Transistor; Transistor Polarity: N Channel; Drain Source Voltage Vds: 600V; Continuous Drain Current Id: 22A; On Resistance Rds(on): 0.14ohm; Transistor Mounting: Through Hole; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ark
Mosfet Transistor, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package
*** Source Electronics
MOSFET N-CH 600V 21A TO-220FP / Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP Tube
***ponent Stockers USA
21 A 600 V 0.16 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 21A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 40W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220F
*** Source Electronics
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 20A TO220F
***ure Electronics
N-Channel 600 V 0.19 Ohm Flange Mount SuperFET Mosfet TO-220F
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):0.15ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-TO-220 ;RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***el Electronic
Chip Resistor - Surface Mount 56kOhm 0201 (0603 Metric) ±1% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 56K OHM 1% 1/20W 0201
***nell
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:20A; Resistance, Rds On:0.15ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:60A; Power, Pd:39W; Voltage, Vds Max:600V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ical
Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP Tube
***ineon SCT
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies, PG-TO220-3, RoHS
***ment14 APAC
MOSFET, N, 600V, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):220mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:20.7A; Package / Case:TO-220F; Power Dissipation Pd:35W; Power Dissipation Pd:35W; Pulse Current Idm:52A; Termination Type:Through Hole; Voltage Vds:600V; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. | Summary of Features: Fourth series of CoolMOS market entry in 2004; Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low; Specific for phase-shift ZVS and DC-AC power applications | Benefits: Improved efficiency; More efficient, more compact, lighter and cooler; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness | Target Applications: Solar; Adapter; PC power; Consumer; Server; Telecom
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 16 A, 199 mΩ, TO-220F
***et Europe
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220F Rail
*** Stop Electro
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 600V, 16A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:35.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Pulse Current Idm:48A
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***p One Stop Global
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
E Series N Channel 650 V 0.18 O 86 nC Flange Mount Power Mosfet - TO-220FP
***nell
MOSFET, N-CH, 600V, 12A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited
10V Drive N-ch MOSFETs
ROHM Semiconductor 10V Drive N-ch MOSFETs are low current, silicon N-channel power MOSFETs featuring low on-resistance, fast switching speed, and a guaranteed gate-source voltage (VGSS) of ±30V. ROHM Semiconductor 10V Drive N-ch MOSFETs of high-efficiency and high breakdown resistance make parallel use easy and simplify drive circuits, and are designed for switching power supply applications.
Teil # Mfg. Beschreibung Aktie Preis
R6020ANX
DISTI # R6020ANX-ND		ROHM SemiconductorMOSFET N-CH 600V 20A TO-220FM
RoHS: Compliant
Min Qty: 1
Container: Bulk		947In Stock
  • 2500:$3.2186
  • 1000:$3.3880
  • 500:$4.0172
  • 100:$4.7190
  • 10:$5.7600
  • 1:$6.4100
R6020ANX
DISTI # R6020ANX		ROHM SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FM Bulk - Bulk (Alt: R6020ANX)
RoHS: Compliant
Min Qty: 500
Container: Bulk		Americas - 0
  • 3000:$2.2900
  • 5000:$2.2900
  • 2000:$2.4900
  • 1000:$2.5900
  • 500:$2.7900
R6020ANX
DISTI # 755-R6020ANX		ROHM SemiconductorMOSFET Nch 600V 20A MOSFET
RoHS: Compliant		0
    Bild Teil # Beschreibung
    UKL1A101KEDANA

    Mfr.#: UKL1A101KEDANA

    OMO.#: OMO-UKL1A101KEDANA

    		 Aluminum Electrolytic Capacitors - Radial Leaded 10 Volt 100uF 105C 6.3x11 2.5LS
    PLF1D101MDO2TD

    Mfr.#: PLF1D101MDO2TD

    OMO.#: OMO-PLF1D101MDO2TD-NICHICON

    		 CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS
    LNK363DN

    Mfr.#: LNK363DN

    OMO.#: OMO-LNK363DN-POWER-INTEGRATIONS

    		 AC/DC Converters 4.7 W (85-265 VAC) 7.5 W (230 VAC)
    UKL1A101KEDANA

    Mfr.#: UKL1A101KEDANA

    OMO.#: OMO-UKL1A101KEDANA-NICHICON

    		 Aluminum Electrolytic Capacitors - Leaded 10 Volt 100uF 105C 6.3x11 2.5LS
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von R6020ANX dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,41 $
    6,41 $
    10
    5,45 $
    54,50 $
    100
    4,72 $
    472,00 $
    250
    4,48 $
    1 120,00 $
    500
    4,02 $
    2 010,00 $
    1000
    3,39 $
    3 390,00 $
    2500
    3,22 $
    8 050,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    More Newest Products
    Top