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IXFK64N50P

IXFK64N50P
Mfr. #:
IXFK64N50P
Hersteller:
Littelfuse
Beschreibung:
Darlington Transistors MOSFET 500V 64A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFK64N50P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXFK64N50P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
FETs - Einzeln
Serie
IXFK64N50
Verpackung
Rohr
Gewichtseinheit
0.352740 oz
Montageart
Durchgangsloch
Handelsname
HyperFET
Paket-Koffer
TO-264-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
830 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
22 ns
Anstiegszeit
25 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
64 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Rds-On-Drain-Source-Widerstand
85 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
85 ns
Typische-Einschaltverzögerungszeit
30 ns
Vorwärts-Transkonduktanz-Min
50 S
Kanal-Modus
Erweiterung
Tags
IXFK64N5, IXFK64, IXFK6, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 550 Vds 85 mOhm 830 W Power Mosfet - TO-264
***ical
Trans MOSFET N-CH 500V 64A 3-Pin(3+Tab) TO-264AA
***ukat
N-Ch 500V 64A 830W 0,085R TO264AA
***ark
Mosfet, N, To-264; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:64A; On Resistance Rds(On):0.085Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFK64N50P
DISTI # IXFK64N50P-ND		IXYS CorporationMOSFET N-CH 500V 64A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube		25In Stock
  • 500:$8.6290
  • 100:$10.1167
  • 25:$11.0092
  • 1:$13.0900
IXFK64N50P
DISTI # 58M7613		IXYS CorporationMOSFET, N, TO-264,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,Power Dissipation Pd:830W RoHS Compliant: Yes63
  • 1:$13.6900
  • 10:$12.4400
  • 25:$11.5100
  • 50:$10.5900
  • 100:$10.3300
IXFK64N50P
DISTI # 747-IXFK64N50P		IXYS CorporationMOSFET 500V 64A
RoHS: Compliant		295
  • 1:$13.6900
  • 10:$12.4400
  • 25:$11.5100
  • 50:$10.5900
  • 100:$10.3300
IXFK64N50P
DISTI # 1427314		IXYS CorporationMOSFET, N, TO-264
RoHS: Compliant		33
  • 1:$20.8700
  • 25:$17.5500
  • 100:$16.1300
  • 500:$13.7600
IXFK64N50P
DISTI # 1427314		IXYS CorporationMOSFET, N, TO-264
RoHS: Compliant		33
  • 1:£11.2700
  • 5:£10.7500
  • 10:£9.0400
  • 50:£8.4800
  • 100:£8.2700
Bild Teil # Beschreibung
IXFK64N50Q3

Mfr.#: IXFK64N50Q3

OMO.#: OMO-IXFK64N50Q3

 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A
IXFK66N85X

Mfr.#: IXFK66N85X

OMO.#: OMO-IXFK66N85X

 MOSFET 850V Ultra Junction X-Class Pwr MOSFET
IXFK60N55Q2

Mfr.#: IXFK60N55Q2

OMO.#: OMO-IXFK60N55Q2

 MOSFET 60 Amps 550V 0.09 Rds
IXFK64N60P

Mfr.#: IXFK64N60P

OMO.#: OMO-IXFK64N60P

 MOSFET 600V 64A
IXFK62N25

Mfr.#: IXFK62N25

OMO.#: OMO-IXFK62N25-1190

 Neu und Original
IXFK64N50

Mfr.#: IXFK64N50

OMO.#: OMO-IXFK64N50-1190

 Neu und Original
IXFK64N60P (P/B)

Mfr.#: IXFK64N60P (P/B)

OMO.#: OMO-IXFK64N60P-P-B--1190

 Neu und Original
IXFK64N50Q3

Mfr.#: IXFK64N50Q3

OMO.#: OMO-IXFK64N50Q3-IXYS-CORPORATION

 MOSFET N-CH 500V 64A TO-264
IXFK60N55Q2

Mfr.#: IXFK60N55Q2

OMO.#: OMO-IXFK60N55Q2-IXYS-CORPORATION

 MOSFET 60 Amps 550V 0.09 Rds
IXFK64N60P

Mfr.#: IXFK64N60P

OMO.#: OMO-IXFK64N60P-IXYS-CORPORATION

 IGBT Transistors MOSFET 600V 64A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von IXFK64N50P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
12,94 $
12,94 $
10
12,30 $
122,96 $
100
11,65 $
1 164,91 $
500
11,00 $
5 500,95 $
1000
10,35 $
10 354,80 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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