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SI3459BDV-T1-GE3

SI3459BDV-T1-GE3
Mfr. #:
SI3459BDV-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 60V 2.9A 6-TSOP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3459BDV-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI3459BDV-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SI3459BDV-T, SI3459BDV, SI3459B, SI3459, SI345, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 0.180ohms; Id -2.2A; TSOP-6; Pd 2W
***ure Electronics
P-CH MOSFET TSOP-6 60V 180MOHM @ 10V - LEAD(PB) AND HALOGEN FREE
***ical
Trans MOSFET P-CH 60V 2.9A 6-Pin TSOP T/R
***ark
P-Channel 60-V (D-S) Mosfet Rohs Compliant: No
***i-Key
MOSFET P-CH 60V 2.9A 6-TSOP
***Components
MOSFET, P-Ch, Vds -60V, Vgs +/- 20V
***
P-CHANNEL 60-V (D-S) MOSFET
***ment14 APAC
Prices include import duty and tax. MOSFET, P-CH, -60V, -2.9A, TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:3.3W; Transistor Case Style:TSOP; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)
***nell
MOSFET, CANALE P, -60V, -2,9A, TSOP; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-2.9A; Tensione Drain Source Vds:-60V; Resistenza di Attivazione Rds(on):0.18ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-3V; Dissipazione di Potenza Pd:3.3W; Modello Case Transistor:TSOP; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (20-Jun-2016)
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3459BDV-T1-GE3
DISTI # V72:2272_07432605		Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R
RoHS: Compliant		55
  • 25:$0.5427
  • 10:$0.6633
  • 1:$0.7621
SI3459BDV-T1-GE3
DISTI # V36:1790_07432605		Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R
RoHS: Compliant		0
  • 3000:$0.2863
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 60V 2.9A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		35445In Stock
  • 1000:$0.2980
  • 500:$0.3725
  • 100:$0.4712
  • 10:$0.6150
  • 1:$0.7000
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 60V 2.9A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		35445In Stock
  • 1000:$0.2980
  • 500:$0.3725
  • 100:$0.4712
  • 10:$0.6150
  • 1:$0.7000
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 60V 2.9A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		33000In Stock
  • 30000:$0.2290
  • 15000:$0.2351
  • 6000:$0.2441
  • 3000:$0.2622
SI3459BDV-T1-GE3
DISTI # 33591883		Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R
RoHS: Compliant		3000
  • 3000:$0.1688
SI3459BDV-T1-GE3
DISTI # 26942294		Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R
RoHS: Compliant		55
  • 24:$0.7621
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R (Alt: SI3459BDV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 12000
  • 150000:$0.1473
  • 75000:$0.1512
  • 30000:$0.1554
  • 15000:$0.1668
  • 9000:$0.1922
  • 6000:$0.2315
  • 3000:$0.2835
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R (Alt: SI3459BDV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1549
  • 18000:€0.1659
  • 12000:€0.1799
  • 6000:€0.2089
  • 3000:€0.3069
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3459BDV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2689
  • 18000:$0.2759
  • 12000:$0.2839
  • 6000:$0.2959
  • 3000:$0.3049
SI3459BDV-T1-GE3
DISTI # 15R4948		Vishay IntertechnologiesP CHANNEL MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,No. of Pins:6Pins RoHS Compliant: Yes0
  • 50000:$0.2710
  • 30000:$0.2840
  • 20000:$0.3050
  • 10000:$0.3260
  • 5000:$0.3530
  • 1:$0.3620
SI3459BDV-T1-GE3
DISTI # 84R8040		Vishay IntertechnologiesP CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:2W RoHS Compliant: Yes0
  • 1000:$0.3390
  • 500:$0.4240
  • 250:$0.4690
  • 100:$0.5140
  • 50:$0.5950
  • 25:$0.6770
  • 1:$0.8380
SI3459BDV-T1-GE3.
DISTI # 96AC3676		Vishay IntertechnologiesP-CHANNEL 60-V (D-S) MOSFET ROHS COMPLIANT: NO3000
  • 50000:$0.2710
  • 30000:$0.2840
  • 20000:$0.3050
  • 10000:$0.3260
  • 5000:$0.3530
  • 1:$0.3620
SI3459BDV-T1-GE3
DISTI # 70026448		Vishay SiliconixMOSFET,P-Ch,Vds -60V,Vgs +/- 20V,Rds(on) 0.180ohms,Id -2.2A,TSOP-6,Pd 2W
RoHS: Compliant		0
  • 3000:$0.3370
SI3459BDV-T1-GE3Vishay IntertechnologiesSI3457BDV Series 30 V 0.216 Ohm 12 nC P-Channel Surface Mount Mosfet - TSOP-6
RoHS: Compliant		3000Reel
  • 3000:$0.2600
SI3459BDV-T1-GE3
DISTI # 781-SI3459BDV-GE3		Vishay IntertechnologiesMOSFET -60V Vds 20V Vgs TSOP-6
RoHS: Compliant		15221
  • 1:$0.8300
  • 10:$0.6700
  • 100:$0.5090
  • 500:$0.4200
  • 1000:$0.3360
  • 3000:$0.3050
SI3459BDV-T1-GE3Vishay Intertechnologies 1602
    SI3459BDV-T1-GE3
    DISTI # 2679686    		Vishay IntertechnologiesMOSFET, P-CH, -60V, -2.9A, TSOP0
    • 9000:£0.2110
    • 3000:£0.2150
    SI3459BDV-T1-GE3Vishay IntertechnologiesMOSFET -60V Vds 20V Vgs TSOP-6
    RoHS: Compliant    		Americas - 3000
    • 3000:$0.2910
    • 6000:$0.2790
    • 12000:$0.2730
    • 18000:$0.2640
    SI3459BDV-T1-GE3
    DISTI # 2646376    		Vishay IntertechnologiesMOSFET, P-CH, -60V, -2.9A, TSOP
    RoHS: Compliant    		0
    • 1000:$0.4500
    • 500:$0.5620
    • 100:$0.7110
    • 10:$0.9270
    • 1:$1.0500
    SI3459BDV-T1-GE3
    DISTI # 2679686    		Vishay IntertechnologiesMOSFET, P-CH, -60V, -2.9A, TSOP
    RoHS: Compliant    		0
    • 3000:$0.4160
    SI3459BDV-T1-GE3
    DISTI # XSFP00000077613    		Vishay Siliconix 
    RoHS: Compliant    		6000 in Stock0 on Order
    • 6000:$0.3467
    • 3000:$0.3714
    Bild Teil # Beschreibung
    SI3459BDV-T1-GE3

    Mfr.#: SI3459BDV-T1-GE3

    OMO.#: OMO-SI3459BDV-T1-GE3

    		 MOSFET -60V Vds 20V Vgs TSOP-6
    SI3459BDV-T1-E3

    Mfr.#: SI3459BDV-T1-E3

    OMO.#: OMO-SI3459BDV-T1-E3

    		 MOSFET -60V Vds 20V Vgs TSOP-6
    SI3459BDV-T1-E

    Mfr.#: SI3459BDV-T1-E

    OMO.#: OMO-SI3459BDV-T1-E-1190

    		 Neu und Original
    SI3459BDV-T1-E3

    Mfr.#: SI3459BDV-T1-E3

    OMO.#: OMO-SI3459BDV-T1-E3-VISHAY

    		 MOSFET P-CH 60V 2.9A 6-TSOP
    SI3459BDV-T1-GE3

    Mfr.#: SI3459BDV-T1-GE3

    OMO.#: OMO-SI3459BDV-T1-GE3-VISHAY

    		 MOSFET P-CH 60V 2.9A 6-TSOP
    SI3459BDVT1E3

    Mfr.#: SI3459BDVT1E3

    OMO.#: OMO-SI3459BDVT1E3-1190

    		 Small Signal Field-Effect Transistor, 0.0022A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    SI3459BDY-T1-E3

    Mfr.#: SI3459BDY-T1-E3

    OMO.#: OMO-SI3459BDY-T1-E3-1190

    		 Neu und Original
    SI3459BDV-T1-GE3-CUT TAPE

    Mfr.#: SI3459BDV-T1-GE3-CUT TAPE

    OMO.#: OMO-SI3459BDV-T1-GE3-CUT-TAPE-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von SI3459BDV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,36 $
    0,36 $
    10
    0,34 $
    3,44 $
    100
    0,33 $
    32,55 $
    500
    0,31 $
    153,70 $
    1000
    0,29 $
    289,30 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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