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SCTH90N65G2V-7

SCTH90N65G2V-7
Mfr. #:
SCTH90N65G2V-7
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SCTH90N65G2V-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SCTH90N65G2V-7 Mehr Informationen SCTH90N65G2V-7 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
SMD/SMT
Paket / Koffer:
H2PAK-7
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
90 A
Rds On - Drain-Source-Widerstand:
26 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.9 V
Vgs - Gate-Source-Spannung:
10 V to 22 V
Qg - Gate-Ladung:
157 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
330 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
SCTH90N
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
16 ns
Produktart:
MOSFET
Anstiegszeit:
38 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
58 ns
Typische Einschaltverzögerungszeit:
26 ns
Tags
SCTH, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
650 Silicon-Carbide (SiC) MOSFETs
STMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures. SiC MOSFETs also feature excellent switching performance versus the best-in-class IGBTs in all temperature ranges. This simplifies the thermal design of power electronic systems.
Teil # Mfg. Beschreibung Aktie Preis
SCTH90N65G2V-7
DISTI # V36:1790_18695152		STMicroelectronicsSCTH90N65G2V-70
  • 1000000:$35.1100
  • 500000:$35.1200
  • 100000:$39.3700
  • 10000:$50.6500
  • 1000:$52.8000
SCTH90N65G2V-7
DISTI # 497-18352-1-ND		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SCTH90N65G2V-7
    DISTI # 497-18352-6-ND    		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SCTH90N65G2V-7
      DISTI # 497-18352-2-ND      		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
      RoHS: Compliant
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
        SCTH90N65G2V-7
        DISTI # SCTH90N65G2V-7        		STMicroelectronicsMOSFET 90A, 650V, 22mO (Alt: SCTH90N65G2V-7)
        RoHS: Compliant
        Min Qty: 1000        		Europe - 0
          SCTH90N65G2V-7
          DISTI # SCTH90N65G2V-7          		STMicroelectronicsMOSFET 90A, 650V, 22mO - Tape and Reel (Alt: SCTH90N65G2V-7)
          RoHS: Not Compliant
          Min Qty: 1000
          Container: Reel          		Americas - 0
          • 10000:$37.5900
          • 6000:$38.3900
          • 4000:$40.1900
          • 2000:$42.0900
          • 1000:$44.1900
          SCTH90N65G2V-7
          DISTI # 02AH6929          		STMicroelectronicsPTD WBG & POWER RF0
          • 1:$36.8800
          SCTH90N65G2V-7
          DISTI # 511-SCTH90N65G2V-7          		STMicroelectronicsMOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
          RoHS: Compliant          		0
          • 1:$52.8000
          • 5:$51.6200
          • 10:$49.2600
          • 25:$47.2000
          • 100:$42.7700
          • 250:$41.2900
          • 500:$36.4900
          Bild Teil # Beschreibung
          SCTH90N65G2V-7

          Mfr.#: SCTH90N65G2V-7

          OMO.#: OMO-SCTH90N65G2V-7

          		 MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
          SCTH90N65G2V-7

          Mfr.#: SCTH90N65G2V-7

          OMO.#: OMO-SCTH90N65G2V-7-STMICROELECTRONICS

          		 SILICON CARBIDE POWER MOSFET 650
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          5500
          Menge eingeben:
          Der aktuelle Preis von SCTH90N65G2V-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          52,80 $
          52,80 $
          5
          51,62 $
          258,10 $
          10
          49,26 $
          492,60 $
          25
          47,20 $
          1 180,00 $
          100
          42,77 $
          4 277,00 $
          250
          41,29 $
          10 322,50 $
          500
          36,49 $
          18 245,00 $
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