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BSB012NE2LXIXUMA1

BSB012NE2LXIXUMA1
Mfr. #:
BSB012NE2LXIXUMA1
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSB012NE2LXIXUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
OptiMOS
Verpackung
Spule
Teil-Aliasnamen
BSB012NE2LXI SP001034232
Montageart
SMD/SMT
Handelsname
OptiMOS
Paket-Koffer
WDSON-2
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
57 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 40 C
Abfallzeit
4.6 ns
Anstiegszeit
6 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
170 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Vgs-th-Gate-Source-Threshold-Voltage
1 V to 2 V
Rds-On-Drain-Source-Widerstand
1.2 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
34 ns
Typische-Einschaltverzögerungszeit
5.7 ns
Qg-Gate-Ladung
32 nC
Vorwärts-Transkonduktanz-Min
180 S
Tags
BSB012NE, BSB012, BSB01, BSB0, BSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Metal Oxide Semiconductor Field Effect Transistor
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, MG-WDSON-2, RoHS
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
Teil # Mfg. Beschreibung Aktie Preis
BSB012NE2LXIXUMA1
DISTI # BSB012NE2LXIXUMA1-ND		Infineon Technologies AGMOSFET N-CH 25V 170A WDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.9831
BSB012NE2LXIXUMA1
DISTI # SP001034232		Infineon Technologies AGTrans MOSFET N-CH 25V 37A 7-Pin WDSON T/R (Alt: SP001034232)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 10000
  • 5000:€0.9519
  • 10000:€0.7779
  • 20000:€0.7139
  • 30000:€0.6589
  • 50000:€0.6119
BSB012NE2LXIXUMA1
DISTI # BSB012NE2LXIXUMA1		Infineon Technologies AGTrans MOSFET N-CH 25V 37A 7-Pin WDSON T/R - Tape and Reel (Alt: BSB012NE2LXIXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.7919
  • 10000:$0.7629
  • 20000:$0.7359
  • 30000:$0.7109
  • 50000:$0.6979
BSB012NE2LXIXUMA1
DISTI # 726-BSB012NE2LXIXUMA		Infineon Technologies AGMOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
RoHS: Compliant		0
  • 1:$2.0300
  • 10:$1.7200
  • 100:$1.3800
  • 500:$1.2100
  • 1000:$0.9970
  • 2500:$0.9290
  • 5000:$0.8940
BSB012NE2LXI
DISTI # 726-BSB012NE2LXI		Infineon Technologies AGMOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
RoHS: Compliant		0
  • 1:$2.0300
  • 10:$1.7200
  • 100:$1.3800
  • 500:$1.2100
  • 1000:$0.9970
  • 2500:$0.9290
  • 5000:$0.8940
BSB012NE2LXIXUMA1Infineon Technologies AGPower Field-Effect Transistor
RoHS: Compliant		897
  • 1000:$0.7100
  • 500:$0.7500
  • 100:$0.7800
  • 25:$0.8100
  • 1:$0.8700
Bild Teil # Beschreibung
BSB012NE2LXIXUMA1

Mfr.#: BSB012NE2LXIXUMA1

OMO.#: OMO-BSB012NE2LXIXUMA1

 MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LXI

Mfr.#: BSB012NE2LXI

OMO.#: OMO-BSB012NE2LXI

 MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LX

Mfr.#: BSB012NE2LX

OMO.#: OMO-BSB012NE2LX

 MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LX5G

Mfr.#: BSB012NE2LX5G

OMO.#: OMO-BSB012NE2LX5G-1190

 Neu und Original
BSB012NE2LXI

Mfr.#: BSB012NE2LXI

OMO.#: OMO-BSB012NE2LXI-1190

 MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LXXUMA1

Mfr.#: BSB012NE2LXXUMA1

OMO.#: OMO-BSB012NE2LXXUMA1-1190

 Neu und Original
BSB012NE2LX

Mfr.#: BSB012NE2LX

OMO.#: OMO-BSB012NE2LX-INFINEON-TECHNOLOGIES

 IGBT Transistors MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LXIXUMA1

Mfr.#: BSB012NE2LXIXUMA1

OMO.#: OMO-BSB012NE2LXIXUMA1-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von BSB012NE2LXIXUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,04 $
1,04 $
10
0,99 $
9,91 $
100
0,94 $
93,87 $
500
0,89 $
443,30 $
1000
0,83 $
834,40 $
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