NE3210S01

NE3210S01
Mfr. #:
NE3210S01
Hersteller:
CEL
Beschreibung:
RF JFET Transistors Super Lo Noise HJFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NE3210S01 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
CEL
Produktkategorie:
HF-JFET-Transistoren
RoHS:
Y
Transistortyp:
HFET
Technologie:
GaAs
Gewinnen:
13.5 dB
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
4 V
Vgs - Gate-Source-Durchbruchspannung:
- 3 V
Id - Kontinuierlicher Drainstrom:
70 mA
Maximale Betriebstemperatur:
+ 125 C
Pd - Verlustleistung:
165 mW
Montageart:
SMD/SMT
Paket / Koffer:
SO-1
Verpackung:
Schüttgut
Arbeitsfrequenz:
12 GHz
Produkt:
HF-JFET
Typ:
GaAs HFET
Marke:
CEL
Vorwärtstranskonduktanz - Min:
55 mS
Gate-Source-Abschaltspannung:
2 V
NF - Rauschzahl:
0.35 dB
Produktart:
HF-JFET-Transistoren
Werkspackungsmenge:
1
Unterkategorie:
Transistoren
Tags
NE3210S0, NE3210S, NE3210, NE321, NE32, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans JFET 4V 70mA AlGaAs HJFET 4-Pin Case S01
***et
Trans JFET 4V 70mA 4-Pin Case S01
***i-Key
FET RF 4V 12GHZ S01
Teil # Mfg. Beschreibung Aktie Preis
NE3210S01
DISTI # C1S620200716291
Renesas Electronics CorporationMOSFETs
RoHS: Not Compliant
120
  • 100:$5.7200
  • 60:$6.4000
  • 40:$6.7000
  • 20:$7.0300
NE3210S01
DISTI # NE3210S01-ND
California Eastern Laboratories (CEL)FET RF 4V 12GHZ S01
RoHS: Compliant
Min Qty: 70
Container: *
Limited Supply - Call
    NE3210S01-T1B
    DISTI # NE3210S01-T1B-ND
    California Eastern Laboratories (CEL)FET RF 4V 12GHZ S01
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape & Reel (TR)
    Limited Supply - Call
      NE3210S01
      DISTI # 551-NE3210S01
      California Eastern Laboratories (CEL)RF JFET Transistors Super Lo Noise HJFET
      RoHS: Compliant
      0
        NE3210S01-T1B
        DISTI # 551-NE3210S01-T1B
        California Eastern Laboratories (CEL)RF JFET Transistors Super Lo Noise HJFET
        RoHS: Compliant
        0
          NE3210S01-T1B-A
          DISTI # 551-NE3210S01-T1BA
          NEC Electronics GroupRF JFET Transistors Super Lo Noise HJFET
          RoHS: Compliant
          0
            NE3210S01-A
            DISTI # 551-NE3210S01-A
            NEC Electronics GroupRF JFET Transistors Super Lo Noise HJFET
            RoHS: Compliant
            0
              NE3210S01-T1BNEC Electronics Group 105
                Bild Teil # Beschreibung
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                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                4000
                Menge eingeben:
                Der aktuelle Preis von NE3210S01 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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