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FGA40T65SHDF

FGA40T65SHDF
Mfr. #:
FGA40T65SHDF
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors FS3TIGBT TO3PN 40A 650V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGA40T65SHDF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGA40T65SHDF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3PN
Montageart:
Durchgangsloch
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.81 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
268 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
FGA40T65SHDF
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
80 A
Marke:
ON Semiconductor / Fairchild
Gate-Emitter-Leckstrom:
400 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Gewichtseinheit:
0.225789 oz
Tags
FGA40T6, FGA40T, FGA40, FGA4, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-3PN Rail
***ark
650V FS Gen3 Trench IGBT - 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.
***ical
Trans IGBT Chip N=-CH 650V 80A 238000mW 3-Pin(3+Tab) TO-3PN Rail
***emi
IGBT, 650 V, 40 A Field Stop Trench
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for welder application where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 650V, 40A Field Stop Trench
***ark
650V Fs Gen3 Trench Igbt / Rail
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer superior conduction andswitching performance and easy parallel operation. This device is well suited for the resonant or soft switching application suchas induction heating and MWO.
***ark
Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes
***(Formerly Allied Electronics)
NGTB40N65FL2WG; IGBT Transistor; 80 A 650 V; 1MHz; 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3
***nell
650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon SCT
Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
***ure Electronics
IHW50N65R5 Series 650 V 80 A 282 W Reverse Conducting IGBT - PG-TO-247-3
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:282W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon SCT
Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.4V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar. | Summary of Features: Optimized for full rated hard switching turn off typically found in Welding; Very low V ce(sat) of 1.35V @25C; Low E tot; Soft recovery and low Q rr for diode; Good R goff controllability | Benefits: Best price/performance ratio; Good fit to mainstream design of fsw>20kHz; Low T j & T c for lower heatsink and cooling cost | Target Applications: Welding; UPS; Solar
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
Teil # Mfg. Beschreibung Aktie Preis
FGA40T65SHDF
DISTI # V99:2348_06359201		ON Semiconductor650V FS GEN3 TRENCH IGBT450
  • 5000:$1.9900
  • 2500:$2.0410
  • 1000:$2.1540
  • 500:$2.4840
  • 250:$2.7199
  • 100:$2.8460
  • 10:$3.1690
  • 1:$3.6380
FGA40T65SHDF
DISTI # FGA40T65SHDF-ND		ON SemiconductorIGBT 650V 80A 268W TO-3PN
RoHS: Compliant
Min Qty: 1
Container: Tube		444In Stock
  • 1350:$2.3373
  • 900:$2.7714
  • 450:$3.0886
  • 10:$3.9730
  • 1:$4.4200
FGA40T65SHDF
DISTI # 25845320		ON Semiconductor650V FS GEN3 TRENCH IGBT450
  • 250:$2.7200
  • 100:$2.8460
  • 10:$3.1690
  • 3:$3.6380
FGA40T65SHDF
DISTI # FGA40T65SHDF		ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA40T65SHDF)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.9900
  • 900:$1.9900
  • 1800:$1.9900
  • 2700:$1.9900
  • 4500:$1.8900
FGA40T65SHDF
DISTI # 512-FGA40T65SHDF		ON SemiconductorIGBT Transistors FS3TIGBT TO3PN 40A 650V
RoHS: Compliant		307
  • 1:$4.2100
  • 10:$3.5800
  • 100:$3.1100
  • 250:$2.9500
  • 500:$2.6400
  • 1000:$2.2300
  • 2500:$2.1200
FGA40T65SHDF
DISTI # C1S541901510110		ON SemiconductorTrans IGBT Chip N-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-3PN Tube
RoHS: Compliant		450
  • 250:$2.7199
  • 100:$2.8460
  • 1:$3.6380
Bild Teil # Beschreibung
IHW30N135R3

Mfr.#: IHW30N135R3

OMO.#: OMO-IHW30N135R3

 IGBT Transistors IGBT PRODUCTS TrenchStop RC
IHW30N135R3

Mfr.#: IHW30N135R3

OMO.#: OMO-IHW30N135R3-1190

 Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247 - Bulk (Alt: IHW30N135R3)
Verfügbarkeit
Aktie:
284
Auf Bestellung:
2267
Menge eingeben:
Der aktuelle Preis von FGA40T65SHDF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,20 $
4,20 $
10
3,57 $
35,70 $
100
3,10 $
310,00 $
250
2,94 $
735,00 $
500
2,64 $
1 320,00 $
1000
2,22 $
2 220,00 $
2500
2,11 $
5 275,00 $
5000
2,03 $
10 150,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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