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IXTY26P10T

IXTY26P10T
Mfr. #:
IXTY26P10T
Hersteller:
Littelfuse
Beschreibung:
MOSFET TrenchP Power MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTY26P10T Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTY26P10T DatasheetIXTY26P10T Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
26 A
Rds On - Drain-Source-Widerstand:
90 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4.5 V
Vgs - Gate-Source-Spannung:
15 V
Qg - Gate-Ladung:
52 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
150 W
Kanalmodus:
Erweiterung
Handelsname:
GrabenP
Verpackung:
Rohr
Höhe:
2.38 mm
Länge:
6.22 mm
Serie:
IXTY26P10
Typ:
TrenchP Leistungs-MOSFET
Breite:
6.73 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
10 S
Abfallzeit:
11 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
70
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
37 ns
Typische Einschaltverzögerungszeit:
20 ns
Gewichtseinheit:
0.081130 oz
Tags
IXTY2, IXTY, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET P-CH 100V 26A 3-Pin(2+Tab) TO-252
***el Electronic
Power Switch Hi Side 6A 24-Pin QFN EP T/R
***ure Electronics
-100V, - 26A, 90m,P-Channel, TO-252
***ark
MOSFET Transistor, N Channel, 23 A, 100 V, 60 mohm, 10 V, 3 V RoHS Compliant: Yes
***icroelectronics
N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
*** Source Electronics
Trans MOSFET N-CH 100V 23A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 23A DPAK
***va Crawler
N-channel 100 V, 0.06 Ohm typ., 23 A StripFET II Power MOSFET in a DPAK package
***ure Electronics
N-Channel 100 V 0.065 Ohm Surface Mount STripFET™ II Power MosFet - TO-252-3
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Source Voltage Vds:100V; On Resistance Rds(on):0.065ohm; Rds(on)
***r Electronics
Power Field-Effect Transistor, 15A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 70W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 23A; On State resistance @ Vgs = 10V: 65mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V
***emi
N-Channel PowerTrench® MOSFET, 100V, 32A, 0.036 ohm
***ure Electronics
N-Channel 100 V 36 mOhm Surface Mount PowerTrench Mosfet TO-252AA
***r Electronics
Power Field-Effect Transistor, 5.5A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:32A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252AA ;RoHS Compliant: Yes
***nell
MOSFET, N, SMD, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 95W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Current Id Max: 32A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V
***Yang
Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK
***ser
MOSFETs 16a, 100V N-Ch 0.090Ohm
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
*** Source Electronics
Trans MOSFET N/P-CH 80V 4.3A/2.8A 5-Pin(4+Tab) DPAK T/R / MOSFET N/P-CH 80V 4.3A/2.8A DPAK
***et Europe
Transistor MOSFET Array N/P-CH 80V 13.9A 5-Pin DPAK T/R
***ure Electronics
Dual N/P-Channel 80 V 80 mOhm Surface Mount PowerTrench Mosfet TO-252-5
***nell
MOSFET, N/P-CH, 80V, 13.9A, TO-252 -5; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 13.9A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.08ohm; Rds(on) Te; Available until stocks are exhausted
*** Stop Electro
Power Field-Effect Transistor, 4.3A I(D), 80V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
***ure Electronics
Single N-Channel 100V 18 mOhm 19 nC OptiMOS™ Power Mosfet - DPAK
***p One Stop
Trans MOSFET N-CH 100V 43A Automotive 3-Pin(2+Tab) DPAK T/R
***nell
MOSFET, N-CH, 100V, 43A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 43A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0147ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V;
***roFlash
Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO252-3, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***icroelectronics
N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package
***ark
N CHANNEL MOSFET, 100V, 13A, D-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 100V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Teil # Mfg. Beschreibung Aktie Preis
IXTY26P10T
DISTI # 25287348		IXYS CorporationTrans MOSFET P-CH 100V 26A 3-Pin(2+Tab) DPAK
RoHS: Compliant		296
  • 1050:$1.3860
  • 560:$1.6434
  • 140:$2.0295
  • 70:$2.2275
  • 8:$2.7720
IXTY26P10T
DISTI # IXTY26P10T-ND		IXYS CorporationMOSFET P-CH 100V 26A TO-252
RoHS: Compliant
Min Qty: 1
Container: Tube		20In Stock
  • 2520:$1.4000
  • 560:$1.6600
  • 140:$2.0500
  • 70:$2.2500
  • 10:$2.5000
  • 1:$2.8000
IXTY26P10T
DISTI # V36:1790_15875892		IXYS CorporationTrans MOSFET P-CH 100V 26A 3-Pin(2+Tab) DPAK
RoHS: Compliant		0
    IXTY26P10T-TRL
    DISTI # V36:1790_17737115    		IXYS CorporationTrans MOSFET P-CH 100V 26A 3-Pin(2+Tab) DPAK0
      IXTY26P10T
      DISTI # 747-IXTY26P10T      		IXYS CorporationMOSFET TrenchP Power MOSFET
      RoHS: Compliant      		1459
      • 1:$3.2200
      • 10:$2.8800
      • 25:$2.5000
      • 50:$2.2500
      • 100:$2.1300
      • 250:$2.0100
      • 500:$1.9100
      • 1000:$1.6100
      • 2500:$1.3800
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      LTC6811HG-2#PBF

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      		 Logic Gates Mil Enhance Sgl 2- Input Pos-AND Gate
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      		 Analog Switch ICs NEGATIVE VOLTAGE SPDT SWI
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      		 SENSOR DIGITAL -40C-125C 8SOIC
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1984
      Menge eingeben:
      Der aktuelle Preis von IXTY26P10T dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      3,22 $
      3,22 $
      10
      2,88 $
      28,80 $
      25
      2,50 $
      62,50 $
      50
      2,25 $
      112,50 $
      100
      2,13 $
      213,00 $
      250
      2,01 $
      502,50 $
      500
      1,91 $
      955,00 $
      1000
      1,61 $
      1 610,00 $
      2500
      1,38 $
      3 450,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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