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Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
RFD14N06LSM9A | Harris Semiconductor | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 2500 |
|
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: RFD14N05LSM OMO.#: OMO-RFD14N05LSM |
MOSFET TO-252AA N-Ch Power | |
Mfr.#: RFD14N05LSM9A-CUT TAPE |
Neu und Original | |
Mfr.#: RFD1405L OMO.#: OMO-RFD1405L-1190 |
Neu und Original | |
Mfr.#: RFD14N05LSM9A |
MOSFET N-CH 50V 14A TO-252AA | |
Mfr.#: RFD14N05_NL OMO.#: OMO-RFD14N05-NL-1190 |
Neu und Original | |
Mfr.#: RFD14N06 OMO.#: OMO-RFD14N06-1190 |
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | |
Mfr.#: RFD14N06L OMO.#: OMO-RFD14N06L-1190 |
Neu und Original | |
Mfr.#: RFD14N06LSM OMO.#: OMO-RFD14N06LSM-1190 |
Neu und Original | |
Mfr.#: RFD14N06SM OMO.#: OMO-RFD14N06SM-1190 |
Neu und Original | |
Mfr.#: RFD14NO5L OMO.#: OMO-RFD14NO5L-1190 |
Neu und Original |