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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI2312DS-T1-E3 DISTI # 06J7575 | Vishay Intertechnologies | MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:4.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:650mV,Power Dissipation Pd:750mW RoHS Compliant: Yes | 0 | |
| SI2312DS-T1-E3 DISTI # 781-SI2312DS-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2312BDS-E3 RoHS: Compliant | 0 | |
| SI2312DS-T1-E3 | Vishay Intertechnologies | 3 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: SI2312DS OMO.#: OMO-SI2312DS-1190 |
Neu und Original |
|
|
Mfr.#: SI2312DS-T1 OMO.#: OMO-SI2312DS-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI2312BDS-E3 |
|
|
Mfr.#: SI2312DS-T1-E3 OMO.#: OMO-SI2312DS-T1-E3-1190 |
MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage |
|
|
Mfr.#: SI2312DS-T1-GE3 OMO.#: OMO-SI2312DS-T1-GE3-1190 |
Neu und Original |
|
|
Mfr.#: SI2312DS-T1/C2T0D OMO.#: OMO-SI2312DS-T1-C2T0D-1190 |
Neu und Original |